98
.025" NPN Phototransistors
IRT Molded Lensed Lateral Package
VTT7222, 7223, 7225
PACKAGE DIMENSIONS
inch (mm)
CASE 7 LATERAL
CHIP TYPE: 25T
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor
mounted in a 3 mm diameter, lensed, end looking, plastic
package. The package material transmits infrared and
blocks visible light. These devices are spectrally and
mechanically matched to the VTE717x series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
-40C to 85C
Operating Temperature:
-40C to 85C
Continuous Power Dissipation:
50 mW
Derate above 30C:
0.71 mW/C
Maximum Current:
25 mA
Lead Soldering Temperature:
260C
(1.6 mm from case, 5 sec. max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25C
(See also typical curves, pages 91-92)
.
Refer to General Product Notes, page 2.
Part Number
Light Current
Dark Current
Collector
Breakdown
Emitter
Breakdown
Saturation
Voltage
Rise/Fall Time
Angular
Response
1/2
l
C
l
CEO
V
BR(CEO)
V
BR(ECO)
V
CE(SAT)
t
R
/t
F
mA
H
fc (mW/cm
2
)
V
CE
= 5.0 V
H = 0
l
C
= 100 A
H = 0
l
E
= 100 A
H = 0
l
C
= 1.0 mA
H = 400 fc
l
C
= 1.0 mA
R
L
= 100
Min.
Max.
(nA)
Max.
V
CE
(Volts)
Volts, Min.
Volts, Min.
Volts, Max.
sec, Typ.
Typ.
VTT7222
0.9
--
100 (5)
100
10
30
5.0
0.25
2.0
36
VTT7223
1.8
--
100 (5)
100
10
30
5.0
0.25
2.0
36
VTT7225
4.0
--
100 (5)
100
10
30
5.0
0.25
4.0
36
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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