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DATA SHEET
Product specification
Supersedes data of 1999 Apr 26
1999 May 07
DISCRETE SEMICONDUCTORS
BAS221
General purpose diode
book, halfpage
M3D154
1999 May 07
2
Philips Semiconductors
Product specification
General purpose diode
BAS221
FEATURES
Small ceramic SMD package
Switching speed: max. 50 ns
General application
Continuous reverse voltage:
max. 200 V
Repetitive peak reverse voltage:
max. 250 V
Repetitive peak forward current:
max. 1 A.
APPLICATIONS
General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS221 is a general purpose diode fabricated in planar technology, and
encapsulated in the ceramic SOD110 package.
Fig.1 Simplified outline (SOD110) and symbol.
handbook, 4 columns
MAM139
k
a
cathode mark
top view
side view
bottom view
a
k
Marking code: JS.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
250
V
V
R
continuous reverse voltage
-
200
V
I
F
continuous forward current
note 1; see Fig.2
-
300
mA
I
FRM
repetitive peak forward current
t
p
< 0.5 ms;
0.25
-
1
A
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
20
A
t = 100
s
-
7
A
t = 10 ms
-
2
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
400
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
1999 May 07
3
Philips Semiconductors
Product specification
General purpose diode
BAS221
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
200
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
315
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 100 mA
1
V
I
F
= 200 mA
1.25
V
I
F
= 300 mA
1.4
V
I
R
reverse current
see Fig.5
V
R
= 200 V
100
nA
V
R
= 200 V; T
j
= 150
C
100
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
2
pF
t
rr
reverse recovery time
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
; measured
at I
R
= 3 mA; see Fig.7
50
ns
1999 May 07
4
Philips Semiconductors
Product specification
General purpose diode
BAS221
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0
50
100
200
400
300
100
0
200
150
Tamb (
C)
IF
(mA)
MDA986
(1) T
j
= 150
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
0
2
600
IF
(mA)
0
200
400
MBG384
1
VF (V)
(1)
(3)
(2)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MDA987
10
2
10
1
10
-
1
1
10
tp (
s)
IFSM
(A)
10
2
10
3
10
4
1999 May 07
5
Philips Semiconductors
Product specification
General purpose diode
BAS221
Fig.5
Reverse current as a function of junction
temperature.
handbook, halfpage
10
2
10
200
0
MBG381
100
Tj (
o
C)
IR
(
A)
1
10
2
10
1
(1)
(2)
(1) V
R
= V
Rmax
; maximum values.
(2) V
R
= V
Rmax
; typical values.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
4
8
6
2
1.0
0.8
0.2
0.6
0.4
MBG447
VR (V)
Cd
(pF)
Fig.7 Reverse recovery time and waveforms.
(1) I
R
= 3 mA.
Input signal: reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 100 ns; duty factor
= 0.05.
Oscilloscope: rise time t
r
= 0.35 ns.
Circuit capacitance C
1 pF (oscilloscope input + parasitic capacitance).
handbook, full pagewidth
t rr
(1)
I F
t
output signal
t r
t
t p
10%
90%
VR
input signal
V = V I x R
R
F
S
R = 50
S
IF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881