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Электронный компонент: 1N5061

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DATA SHEET
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 Jun 19
DISCRETE SEMICONDUCTORS
1N5059 to 1N5062
Controlled avalanche rectifiers
handbook, 2 columns
M3D116
1996 Jun 19
2
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
1N5059 to 1N5062
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
1N5059
-
200
V
1N5060
-
400
V
1N5061
-
600
V
1N5062
-
800
V
V
RWM
crest working reverse voltage
1N5059
-
200
V
1N5060
-
400
V
1N5061
-
600
V
1N5062
-
800
V
V
R
continuous reverse voltage
1N5059
-
200
V
1N5060
-
400
V
1N5061
-
600
V
1N5062
-
800
V
I
F(AV)
average forward current
T
tp
= 45
C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
-
2.0
A
T
amb
= 80
C; PCB mounting
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
-
0.8
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sinewave
-
50
A
E
RSM
non-repetitive peak reverse avalanche
energy
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
-
20
mJ
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
see Fig.5
-
65
+175
C
1996 Jun 19
3
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
1N5059 to 1N5062
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
40
m, see Fig.9.
For more information please refer to the
"General Part of Handbook SC01".
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max
; see Fig.6
-
-
0.8
V
I
F
= 1 A; see Fig.6
-
-
1.0
V
V
(BR)R
reverse avalanche
breakdown voltage
I
R
= 0.1 mA
1N5059
225
-
-
V
1N5060
450
-
-
V
1N5061
650
-
-
V
1N5062
900
-
-
V
I
R
reverse current
V
R
= V
RRMmax
; see Fig.7
-
-
1
A
V
R
= V
RRMmax
; T
j
= 165
C; see Fig.7
-
-
150
A
t
rr
reverse recovery time when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.10
-
3
-
s
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.8
-
50
-
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
46
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
100
K/W
1996 Jun 19
4
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
1N5059 to 1N5062
GRAPHICAL DATA
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
a = 1.57; V
R
= V
RRMmax
;
= 0.5.
Lead length 10 mm.
handbook, halfpage
3
2
1
0
MBG044
0
40
200
80
120
160
Ttp (
C)
IF(AV)
(A)
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
a = 1.57; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.9.
handbook, halfpage
0
IF(AV)
(A)
40
200
1.6
1.2
0.4
0
0.8
80
120
160
Tamb (
C)
MBG054
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
handbook, halfpage
0
1
2
3
4
3
1
0
2
MGC745
2
P
(W)
I
F(AV)
(A)
1.42
2.5
a = 3
1.57
Solid line = V
R
.
Dotted line = V
RRM
;
= 0.5.
Fig.5
Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
0
1200
0
MBH388
100
200
800
400
VR (V)
Tj
(
C)
60
61
59
62
1996 Jun 19
5
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
1N5059 to 1N5062
Solid line: T
j
= 25
C.
Dotted line: T
j
= 175
C.
Fig.6
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
15
I
F
10
5
0
1
2
MGC735
V
F
(V)
(A)
Fig.7
Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
10
3
10
(
A)
I
R
2
10
1
10
-
1
200
0
MGC734
40
80
120
160
T
j
(
o
C)
max
V
R
= V
RRMmax
.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
10
2
MBG031
10
1
1
10
2
10
Cd
(pF)
VR (V)
Fig.9 Device mounted on a printed-circuit board.
handbook, halfpage
MGA200
3
2
7
50
25
50
Dimensions in mm.