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DATA SHEET
Product specification
Supersedes data of April 1992
1996 Apr 26
DISCRETE SEMICONDUCTORS
1N5225B to 1N5267B
Voltage regulator diodes
M3D176
1996 Apr 26
2
Philips Semiconductors
Product specification
Voltage regulator diodes
1N5225B to 1N5267B
FEATURES
Total power dissipation:
max. 500 mW
Tolerance series:
5%
Working voltage range:
nom. 3.0 to 75 V
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
Low-power voltage stabilizers or
voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
The series consists of 43 types with nominal working voltages from 3.0 to 75 V.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diodes are type branded.
handbook, halfpage
MAM239
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Device mounted on a printed circuit-board without metallization pad.
2. Tie-point temperature
75
C.
ELECTRICAL CHARACTERISTICS
Table 1
T
j
= 25
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
F
continuous forward current
-
250
mA
I
ZSM
non-repetitive peak reverse current
t
p
= 100
s; square wave;
T
j
= 25
C prior to surge
see Table
"Per type"
P
tot
total power dissipation
T
amb
= 50
C; lead length max.;
note 1
-
400
mW
Lead length 8 mm; note 2
-
500
mW
P
ZSM
non-repetitive peak reverse power
dissipation
t
p
= 100
s; square wave;
T
j
= 25
C prior to surge; see Fig.3
-
40
W
t
p
= 8.3 ms; square wave;
T
j
55
C prior to surge
-
10
W
T
stg
storage temperature
-
65
+200
C
T
j
junction temperature
-
65
+200
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 200 mA; see Fig.4
1.1
V
1996
Apr
26
3
Philips Semiconductors
Product specification
V
oltage regulator diodes
1N5225B to 1N5267B
Per type
T
j
= 25
C; unless otherwise specified.
TYPE No.
WORKING
VOLTAGE
V
Z
(V)
(1)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(
)
at I
Ztest
TEMP. COEFF.
S
Z
(%/K)
at I
Z
(2)
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
REVERSE CURRENT
at REVERSE
VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
t
p
= 100
s; T
amb
= 25
C
I
R
(
A)
V
R
(V)
NOM.
MAX.
MAX.
MAX.
MAX.
MAX.
1N5225B
3.0
1600
-
0.075
20
450
50
1.0
6.0
1N5226B
3.3
1600
-
0.070
20
450
25
1.0
6.0
1N5227B
3.6
1700
-
0.065
20
450
15
1.0
6.0
1N5228B
3.9
1900
-
0.060
20
450
10
1.0
6.0
1N5229B
4.3
2000
0.055
20
450
5
1.0
6.0
1N5230B
4.7
1900
0.030
20
450
5
1.5
6.0
1N5231B
5.1
1600
0.030
20
300
5
2.0
6.0
1N5232B
5.6
1600
+0.038
20
300
5
3.0
6.0
1N5233B
6.0
1600
+0.038
20
300
5
3.5
6.0
1N5234B
6.2
1000
+0.045
20
200
5
4.0
6.0
1N5235B
6.8
750
+0.050
20
200
3
5.0
6.0
1N5236B
7.5
500
+0.058
20
150
3
6.0
4.0
1N5237B
8.2
500
+0.062
20
150
3
6.5
4.0
1N5238B
8.7
600
+0.065
20
150
3
6.5
3.5
1N5239B
9.1
600
+0.068
20
150
3
7.0
3.0
1N5240B
10
600
+0.075
20
90
3
8.0
3.0
1N5241B
11
600
+0.076
20
85
2
8.4
2.5
1N5242B
12
600
+0.077
20
85
1
9.1
2.5
1N5243B
13
600
+0.079
9.5
80
0.5
9.9
2.5
1N5244B
14
600
+0.082
9.0
80
0.1
10.0
2.0
1N5245B
15
600
+0.082
8.5
75
0.1
11.0
2.0
1N5246B
16
600
+0.083
7.8
75
0.1
12.0
1.5
1N5247B
17
600
+0.084
7.4
75
0.1
13.0
1.5
1N5248B
18
600
+0.085
7.0
70
0.1
14.0
1.5
1N5249B
19
600
+0.086
6.6
70
0.1
14.0
1.5
1N5250B
20
600
+0.086
6.2
60
0.1
15.0
1.5
1996
Apr
26
4
Philips Semiconductors
Product specification
V
oltage regulator diodes
1N5225B to 1N5267B
Notes
1. V
Z
is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25
C.
2. For types 1N5225B to 1N5242B the I
Z
current is 7.5 mA; for 1N5243B and higher I
Z
= I
Ztest
. S
Z
values valid between 25
C and 125
C.
1N5251B
22
600
+0.087
5.6
60
0.1
17.0
1.25
1N5252B
24
600
+0.088
5.2
55
0.1
18.0
1.25
1N5253B
25
600
+0.089
5.0
55
0.1
19.0
1.25
1N5254B
27
600
+0.090
4.6
50
0.1
21.0
1.0
1N5255B
28
600
+0.091
4.5
50
0.1
21.0
1.0
1N5256B
30
600
+0.091
4.2
50
0.1
23.0
1.0
1N5257B
33
700
+0.092
3.8
45
0.1
25.0
0.9
1N5258B
36
700
+0.093
3.4
45
0.1
27.0
0.8
1N5259B
39
800
+0.094
3.2
45
0.1
30.0
0.7
1N5260B
43
900
+0.095
3.0
40
0.1
33.0
0.6
1N5261B
47
1000
+0.095
2.7
40
0.1
36.0
0.5
1N5262B
51
1100
+0.096
2.5
40
0.1
39.0
0.4
1N5263B
56
1300
+0.096
2.2
40
0.1
43.0
0.3
1N5264B
60
1400
+0.097
2.1
40
0.1
46.0
0.3
1N5265B
62
1400
+0.097
2.0
35
0.1
47.0
0.3
1N5266B
68
1600
+0.097
1.8
35
0.1
52.0
0.25
1N5267B
75
1700
+0.098
1.7
35
0.1
56.0
0.2
TYPE No.
WORKING
VOLTAGE
V
Z
(V)
(1)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(
)
at I
Ztest
TEMP. COEFF.
S
Z
(%/K)
at I
Z
(2)
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
REVERSE CURRENT
at REVERSE
VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
t
p
= 100
s; T
amb
= 25
C
I
R
(
A)
V
R
(V)
NOM.
MAX.
MAX.
MAX.
MAX.
MAX.
1996 Apr 26
5
Philips Semiconductors
Product specification
Voltage regulator diodes
1N5225B to 1N5267B
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point lead length 10 mm
300
K/W
R
th j-a
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1
380
K/W