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Электронный компонент: 1N5818

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DATA SHEET
Product specification
Supersedes data of April 1992
1996 May 03
DISCRETE SEMICONDUCTORS
1N5817; 1N5818; 1N5819
Schottky barrier diodes
fpage
M3D119
1996 May 03
2
Philips Semiconductors
Product specification
Schottky barrier diodes
1N5817; 1N5818; 1N5819
FEATURES
Low switching losses
Fast recovery time
Guard ring protected
Hermetically sealed leaded glass
package.
APPLICATIONS
Low power, switched-mode power
supplies
Rectifying
Polarity protection.
DESCRIPTION
The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar
technology, and encapsulated in SOD81 hermetically sealed glass packages
incorporating Implotec
TM(1)
technology.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM218
1996 May 03
3
Philips Semiconductors
Product specification
Schottky barrier diodes
1N5817; 1N5818; 1N5819
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Refer to SOD81 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
P
R
and I
F(AV)
rating will be available on request.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
1N5817
-
20
V
1N5818
-
30
V
1N5819
-
40
V
V
RSM
non-repetitive peak reverse voltage
1N5817
-
24
V
1N5818
-
36
V
1N5819
-
48
V
V
RRM
repetitive peak reverse voltage
1N5817
-
20
V
1N5818
-
30
V
1N5819
-
40
V
V
RWM
crest working reverse voltage
1N5817
-
20
V
1N5818
-
30
V
1N5819
-
40
V
I
F(AV)
average forward current
T
amb
= 55
C; R
th j-a
= 100 K/W;
note 1; V
R(equiv)
= 0.2 V; note 2
-
1
A
I
FSM
non-repetitive peak forward current
t = 8.3 ms half sine wave;
JEDEC method;
T
j
= T
j max
prior to surge: V
R
= 0
-
25
A
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
125
C
1996 May 03
4
Philips Semiconductors
Product specification
Schottky barrier diodes
1N5817; 1N5818; 1N5819
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C; unless otherwise specified.
Note
1. Pulsed test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD81 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
see Fig.2
1N5817
I
F
= 0.1 A
-
-
320
mV
I
F
= 1 A
-
-
450
mV
I
F
= 3 A
-
-
750
mV
V
F
forward voltage
see Fig.2
1N5818
I
F
= 0.1 A
-
-
330
mV
I
F
= 1 A
-
-
550
mV
I
F
= 3 A
-
-
875
mV
V
F
forward voltage
see Fig.2
1N5819
I
F
= 0.1 A
-
-
340
mV
I
F
= 1 A
-
-
600
mV
I
F
= 3 A
-
-
900
mV
I
R
reverse current
V
R
= V
RRMmax
; note 1
-
-
1
mA
V
R
= V
RRMmax
; T
j
= 100
C
-
-
10
mA
C
d
diode capacitance
V
R
= 4 V; f = 1 MHz
1N5817
-
80
-
pF
1N5818
-
50
-
pF
1N5819
-
50
-
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
100
K/W
1996 May 03
5
Philips Semiconductors
Product specification
Schottky barrier diodes
1N5817; 1N5818; 1N5819
GRAPHICAL DATA
handbook, halfpage
0
1
5
0
1
MBE634
2
3
4
0.5
VF (V)
IF
(A)
Tj = 125
oC
25 oC
Fig.2 Typical forward voltage.
Fig.3
1N817. Maximum values steady state forward power dissipation as a function of the average forward
current; a = I
F(RMS)
/I
F(AV).
2
1
0
0
0.5
1.5
MBE642
1
(W)
0.5
PF(AV)
IF(AV) (A)
a = 3
2.5
1.57
1.42
1
2