1.
Product profile
1.1 General description
Planar low capacitance Schottky barrier diodes encapsulated in ultra small SMD plastic
packages.
1.2 Features
s
Very low diode capacitance
s
Very low forward voltage
s
Ultra small SMD plastic packages.
1.3 Applications
s
Digital applications:
x
Ultra high-speed switching
x
Clamping circuits.
s
RF applications:
x
Diode ring mixer
x
RF detector
x
RF voltage doubler.
1.4 Quick reference data
1PS66SB63; 1PS79SB63
5 V, 20 mA low C
d
Schottky barrier diodes
Rev. 02 -- 3 December 2004
Product data sheet
Table 1:
Product overview
Type number
Package
Configuration
Philips
JEITA
1PS66SB63
SOT666
-
triple isolated diode
1PS79SB63
SOD523
SC-79
single diode
Table 2:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
I
F
continuous forward current
-
-
20
mA
V
R
continuous reverse voltage
-
-
5
V
C
d
diode capacitance
V
R
= 0 V;
f = 1 MHz;
see
Figure 3
-
0.35
0.5
pF
9397 750 13846
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 3 December 2004
2 of 10
Philips Semiconductors
1PS66SB63; 1PS79SB63
5 V, 20 mA low C
d
Schottky barrier diodes
2.
Pinning information
[1]
The marking bar indicates the cathode.
3.
Ordering information
4.
Marking
Table 3:
Pinning
Pin
Description
Simplified outline
Symbol
1PS66SB63 (SOT666)
1
anode (diode 1)
2
anode (diode 2)
3
anode (diode 3)
4
cathode (diode 3)
5
cathode (diode 2)
6
cathode (diode 1)
1PS79SB63 (SOD523)
1
cathode
[1]
2
anode
SOT666
1
2
3
4
5
6
6
1
5
2
4
3
sym046
1
2
Top view
sym001
1
2
Table 4:
Ordering information
Type number
Package
Name
Description
Version
1PS66SB63
-
plastic surface mounted package; 6 leads
SOT666
1PS79SB63
SC-79
plastic surface mounted package; 2 leads
SOD523
Table 5:
Marking codes
Type number
Marking code
1PS66SB63
N4
1PS79SB63
T1
9397 750 13846
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 3 December 2004
3 of 10
Philips Semiconductors
1PS66SB63; 1PS79SB63
5 V, 20 mA low C
d
Schottky barrier diodes
5.
Limiting values
6.
Thermal characteristics
[1]
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
[2]
Refer to SOT666 standard mounting conditions.
[3]
Reflow soldering is the only recommended soldering method.
[4]
Refer to SOD523 (SC-79) standard mounting conditions.
7.
Characteristics
[1]
Pulse test: t
p
300
s;
0.02.
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
R
continuous reverse voltage
-
5
V
I
F
continuous forward current
-
20
mA
T
j
junction temperature
-
125
C
T
amb
ambient temperature
-
65
+125
C
T
stg
storage temperature
-
65
+150
C
Table 7:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
SOT666
[2] [3]
-
-
700
K/W
SOD523
[4]
-
-
450
K/W
Table 8:
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
F
forward voltage
see
Figure 1
;
[1]
I
F
= 0.1 mA
-
160
200
mV
I
F
= 1 mA
-
240
300
mV
I
R
reverse current
see
Figure 2
;
V
R
= 1 V
-
0.4
1
A
V
R
= 5 V
-
-
50
A
C
d
diode
capacitance
V
R
= 0 V; f = 1 MHz;
see
Figure 3
-
0.35
0.5
pF
L
s
series inductance
-
0.6
-
nH
9397 750 13846
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 3 December 2004
4 of 10
Philips Semiconductors
1PS66SB63; 1PS79SB63
5 V, 20 mA low C
d
Schottky barrier diodes
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
Fig 1.
Forward current as a function of forward
voltage; typical values
Fig 2.
Reverse current as a function of reverse
voltage; typical values
T
amb
= 25
C; f = 1 MHz.
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
1
V
F
(V)
0
0.2
0.4
I
F
(mA)
0.6
0.8
10
2
10
1
10
-
1
10
-
2
mhc183
(1)
(2) (3)
5
V
R
(V)
0
1
2
I
R
(
A)
3
4
10
3
10
2
10
1
10
-
1
mhc184
(1)
(2)
(3)
0
1
C
d
(pF)
5
V
R
(V)
0.38
0.34
0.26
0.22
0.3
2
3
4
mhc185
9397 750 13846
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 -- 3 December 2004
5 of 10
Philips Semiconductors
1PS66SB63; 1PS79SB63
5 V, 20 mA low C
d
Schottky barrier diodes
8.
Package outline
Fig 4.
Package outline SOT666
UNIT
b
p
c
D
E
e
1
H
E
L
p
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
01-08-27
04-11-08
IEC
JEDEC
JEITA
mm
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
0.5
e
1.0
1.7
1.5
0.1
y
0.1
DIMENSIONS (mm are the original dimensions)
0.3
0.1
SOT666
bp
pin 1 index
D
e1
e
A
Lp
detail X
HE
E
A
S
0
1
2 mm
scale
A
0.6
0.5
c
X
1
2
3
4
5
6
Plastic surface mounted package; 6 leads
SOT666
Y S
w
M
A
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