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Электронный компонент: 1PS70SB82

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DATA SHEET
Product specification
2001 Jan 18
DISCRETE SEMICONDUCTORS
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
Schottky barrier (double) diodes
book, halfpage
M3D102
2001 Jan 18
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
FEATURES
Low forward voltage
Very small SMD plastic package
Low diode capacitance.
APPLICATIONS
UHF mixers
Sampling circuits
Modulators
Phase detectors.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT323 (SC-70)
very small plastic SMD package.
Single diodes and double diodes with
different pinning are available. ESD
sensitive device, observe handling
precautions.
MARKING
PINNING
TYPE NUMBER
MARKING
CODE
1PS70SB82
88
1PS70SB84
87
1PS70SB85
85
1PS70SB86
86
PIN
SYMBOL
1PS70SB82
1
a
2
n.c.
3
k
1PS70SB84
1
a
1
2
k
2
3
k
1
and a
2
1PS70SB85
1
a
1
2
a
2
3
k
1
and k
2
1PS70SB86
1
k
1
2
k
2
3
a
1
and a
2
handbook, 2 columns
3
1
2
MBC870
Top view
Fig.1
Simplified outline
(SOT323; SC-70) and
pin configuration.
3
1
2
n.c.
MLC357
Fig.2
1PS70SB82 single
diode configuration
(symbol).
Fig.3
1PS70SB84 diode
configuration (symbol).
3
1
2
MLC358
Fig.4
1PS70SB85 diode
configuration (symbol).
3
1
2
MLC359
Fig.5
1PS70SB86 diode
configuration (symbol).
3
1
2
MLC360
2001 Jan 18
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Refer to (SOT323; SC-70) standard mounting conditions.
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C; unless otherwise specified.
Note
1. Pulsed test: t
p
= 300
s;
= 0.02.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
-
15
V
I
F
continuous forward current
-
30
mA
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
125
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.6
I
F
= 1 mA
-
340
mV
I
F
= 30 mA
-
700
mV
r
D
differential diode forward resistance
f = 1 MHz; I
F
= 5 mA; see Fig.9
12
-
I
R
continuous reverse current
V
R
= 1 V; note 1; see Fig.7
-
0.2
A
C
d
diode capacitance
V
R
= 0; f = 1 MHz; see Fig.8
1
-
pF
2001 Jan 18
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
handbook, halfpage
1.6
0
0.4
0.8
10
3
10
2
10
1
MGT835
1.2
VF (V)
IF
(mA)
(2)
(1)
(3)
(2)
(1)
(3)
Fig.6
Forward current as a function of forward
voltage; typical values.
(1) T
amb
= 125
C
.
(2) T
amb
= 85
C
.
(3) T
amb
= 25
C
.
handbook, halfpage
0
5
10
VR (V)
IR
(
A)
15
MGT836
10
3
10
2
10
1
10
-
1
10
-
2
(2)
(1)
(3)
Fig.7
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 125
C
.
(2) T
amb
= 85
C
.
(3) T
amb
= 25
C
.
handbook, halfpage
0
1
0.8
0.6
0.4
2
Cd
(pF)
10
MGT837
4
6
8
VR (V)
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C
.
handbook, halfpage
10
3
10
10
2
1
MGT838
10
-
1
1
r
D
(
)
10
IF (mA)
10
2
Fig.9
Differential diode forward resistance as a
function of forward current; typical values.
f = 1 MHz; T
amb
= 25
C
.
2001 Jan 18
5
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
PACKAGE OUTLINE
UNIT
A1
max
bp
c
D
E
e1
HE
Lp
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
0.65
e
1.3
2.2
2.0
0.23
0.13
0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323
SC-70
w
M
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
v
M
A
A
B
y
0
1
2 mm
scale
A
X
1
2
3
Plastic surface mounted package; 3 leads
SOT323
97-02-28