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Электронный компонент: 1PS76SB62

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DATA SHEET
Product specification
2001 Feb 16
DISCRETE SEMICONDUCTORS
1PS76SB62
Schottky barrier diode
k, halfpage
M3D049
2001 Feb 16
2
Philips Semiconductors
Product specification
Schottky barrier diode
1PS76SB62
FEATURES
Ultra high switching speed
Very low capacitance
High breakdown voltage
Guard ring protected
Two pin very small plastic SMD package.
APPLICATIONS
Ultra high-speed switching
High frequency applications.
DESCRIPTION
Epitaxial Schottky barrier diode encapsulated in a
SOD323 (SC-76) very small plastic SMD package.
ESD sensitive device, observe handling precautions.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
olumns
1
2
MGU328
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
Marking code: S6.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: pulse width = 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD323 (SC-76) standard mounting conditions.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
40
V
I
F
continuous forward current
-
20
mA
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
125
C
T
amb
operating ambient temperature
-
65
+125
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 2 mA; see Fig.2; note 1
800
mV
I
R
reverse current
V
R
= 40 V; see Fig.3; note 1
1
A
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.4
0.6
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
450
K/W
2001 Feb 16
3
Philips Semiconductors
Product specification
Schottky barrier diode
1PS76SB62
GRAPHICAL DATA
handbook, halfpage
2
0
(1)
(2)
VF (V)
IF
(mA)
0.4
0.8
1.2
1.6
10
1
10
-
1
10
-
2
MLD553
(3)
Fig.2
Forward current as a function of forward
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
40
20
10
0
(1)
(2)
(3)
VR (V)
IR
(nA)
30
MLD554
10
4
10
3
10
2
10
1
10
-
2
Fig.3
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
0
VR (V)
Cd
(pF)
10
20
40
0.40
0.20
0.36
30
0.32
0.28
0.24
MLD555
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
2001 Feb 16
4
Philips Semiconductors
Product specification
Schottky barrier diode
1PS76SB62
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD323
SC-76
98-09-14
99-09-13
0
1
2 mm
scale
SOD323
UNIT
bp
c
D
E
Q
v
mm
0.40
0.25
+
0.05
-
0.05
0.25
0.10
0.2
1.35
1.15
1.8
1.6
A
1.1
0.8
HE
2.7
2.3
0.25
0.15
Lp
0.45
0.15
DIMENSIONS (mm are the original dimensions)
D
1
2
HE
Lp
A
E
bp
A1
Q
Note
1. The marking bar indicates the cathode.
A1
max.
Plastic surface mounted package; 2 leads
v
M
A
A
c
(1)
2001 Feb 16
5
Philips Semiconductors
Product specification
Schottky barrier diode
1PS76SB62
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS
(1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.