DATA SHEET
Product specification
1998 Jul 16
DISCRETE SEMICONDUCTORS
1PS76SB70
Schottky barrier diode
ok, halfpage
M3D049
1998 Jul 16
2
Philips Semiconductors
Product specification
Schottky barrier diode
1PS76SB70
FEATURES
Low forward voltage
Guard ring protected
Very small plastic SMD package
Low diode capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOD323 very small plastic
SMD package.
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: S2.
handbook, 4 columns
k
a
MAM283
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
70
V
I
F
continuous forward current
-
70
mA
I
FRM
repetitive peak forward current
t
p
1 s;
0.5
-
70
mA
I
FSM
non-repetitive peak forward current
t
p
< 10 ms
-
100
mA
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1998 Jul 16
3
Philips Semiconductors
Product specification
Schottky barrier diode
1PS76SB70
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulsed test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD323 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
continuous forward voltage
see Fig.2
I
F
= 1 mA
410
mV
I
F
= 10 mA
750
mV
I
F
= 15 mA
1
V
I
R
continuous reverse current
V
R
= 50 V; note 1; see Fig.3
100
nA
V
R
= 70 V; note 1; see Fig.3
10
A
C
d
diode capacitance
V
R
= 0 ; f = 1 MHz; see Fig.5
2
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
450
K/W
1998 Jul 16
4
Philips Semiconductors
Product specification
Schottky barrier diode
1PS76SB70
GRAPHICAL DATA
Fig.2
Forward current as a function of forward
voltage; typical values.
10
0
0.2
0.4
0.6
0.8
1
1
I F
(mA)
V (V)
F
MRA803
(1)
(4)
(2)
(3)
10
2
10
1
10
2
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
(4) T
amb
=
-
40
C.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
MRA805
1
10
10
0
20
40
60
80
V (V)
R
IR
(
A)
(1)
(3)
(2)
2
10
1
10
2
10
3
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
10
1
1
10
rdiff
IF (mA)
MRA802
10
-
1
10
2
10
2
10
3
f = 10 kHz.
Fig.4
Differential forward resistance as a function
of forward current; typical values.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
0
0.5
1
1.5
2
0
20
40
60
80
MRA804
Cd
(pF)
V (V)
R
1998 Jul 16
5
Philips Semiconductors
Product specification
Schottky barrier diode
1PS76SB70
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD323
98-09-14
0
1
2 mm
scale
SOD323
UNIT
bp
c
D
E
Q
v
mm
0.40
0.25
+
0.05
-
0.05
0.25
0.10
0.2
1.35
1.15
1.8
1.6
A
1.1
0.8
HE
2.7
2.3
0.25
0.15
Lp
0.45
0.15
DIMENSIONS (mm are the original dimensions)
D
1
2
HE
Lp
A
E
bp
A1
Q
Note
1. The marking bar indicates the cathode.
A1
max.
Plastic surface mounted package; 2 leads
,
v
M
A
A
c
(1)
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