1.
Product profile
1.1 General description
Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic
package.
1.2 Features
s
Very low diode capacitance
s
Very low forward voltage
s
Very small SMD plastic packages
1.3 Applications
s
Digital applications:
x
Ultra high-speed switching
x
Clamping circuits.
s
RF applications:
x
Diode ring mixer
x
RF detector
x
RF voltage doubler
1.4 Quick reference data
1PSxSB17
4 V, 30 mA low C
d
Schottky barrier diode
Rev. 06 -- 4 April 2005
Product data sheet
Table 1:
Product overview
Type number
Package
Configuration
Philips
JEITA
1PS66SB17
SOT666
-
triple isolated diode
1PS76SB17
SOD323
SC-76
single diode
1PS79SB17
SOD523
SC-79
single diode
Table 2:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
I
F
continuous forward current
-
-
30
mA
V
R
continuous reverse voltage
-
-
4
V
C
d
diode capacitance
-
0.8
1
pF
9397 750 14587
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 06 -- 4 April 2005
2 of 8
Philips Semiconductors
1PSxSB17
4 V, 30 mA low C
d
Schottky barrier diode
2.
Pinning information
[1]
The marking bar indicates the cathode.
3.
Ordering information
4.
Marking
5.
Limiting values
Table 3:
Pinning
Pin
Description
Simplified outline
Symbol
SOD323 (SC-76); SOD523 (SC-79)
1
cathode
[1]
2
anode
SOT666
1
anode (diode 1)
2
anode (diode 2)
3
anode (diode 3)
4
cathode (diode 3)
5
cathode (diode 2)
6
cathode (diode 1)
001aab540
1
2
sym001
1
2
1
2
3
4
5
6
6
1
5
2
4
3
sym046
Table 4:
Ordering information
Type number
Package
Name
Description
Version
1PS66SB17
-
plastic surface mounted package; 6 leads
SOT666
1PS76SB17
SC-76
plastic surface mounted package; 2 leads
SOD323
1PS79SB17
SC-79
plastic surface mounted package; 2 leads
SOD523
Table 5:
Marking codes
Type number
Marking code
1PS66SB17
N2
1PS76SB17
S7
1PS79SB17
T2
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
R
continuous reverse voltage
-
4
V
I
F
continuous forward current
-
30
mA
9397 750 14587
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 06 -- 4 April 2005
3 of 8
Philips Semiconductors
1PSxSB17
4 V, 30 mA low C
d
Schottky barrier diode
6.
Thermal characteristics
[1]
For Schottky barrier diodes, thermal run-away has to be considered as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
[2]
Refer to SOD323 (SC-76) standard mounting conditions.
[3]
Refer to SOD523 (SC-79) standard mounting conditions.
[4]
Refer to SOT666 standard mounting conditions.
7.
Characteristics
[1]
Pulse test: t
p
300
s;
0.02.
T
j
junction temperature
-
150
C
T
amb
ambient temperature
-
65
+150
C
T
stg
storage temperature
-
65
+150
C
Table 6:
Limiting values
...continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
Table 7:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-a)
thermal resistance from junction to
ambient;
in free air
[1]
SOD323
[2]
-
-
450
K/W
SOD523
[3]
-
-
450
K/W
SOT666
[4]
-
-
700
K/W
Table 8:
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
F
forward voltage
see
Figure 1
;
[1]
I
F
= 0.1 mA
-
300
350
mV
I
F
= 1 mA
-
360
450
mV
I
F
= 10 mA
-
470
600
mV
I
R
reverse current
V
R
= 3 V; see
Figure 2
-
-
250
nA
C
d
diode
capacitance
see
Figure 3
;
V
R
= 0 V; f = 1 MHz
-
0.8
1
pF
V
R
= 0.5 V; f = 1 MHz
-
0.65
-
pF
9397 750 14587
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 06 -- 4 April 2005
4 of 8
Philips Semiconductors
1PSxSB17
4 V, 30 mA low C
d
Schottky barrier diode
(1) T
amb
= 150
C
(2) T
amb
= 85
C
(3) T
amb
= 25
C
(4) T
amb
=
-
40
C
(1) T
amb
= 150
C
(2) T
amb
= 85
C
(3) T
amb
= 25
C
(4) T
amb
=
-
40
C
Fig 1.
Forward current as a function of forward
voltage; typical values.
Fig 2.
Reverse current as a function of reverse
voltage; typical values.
T
amb
= 25
C; f = 1 MHz
Fig 3.
Diode capacitance as a function of reverse voltage; typical values.
006aaa077
10
-
1
1
10
10
2
I
F
(mA)
10
-
2
V
F
(V)
0
0.8
0.6
0.2
0.4
(3)
(4)
(2)
(1)
006aaa078
I
R
(nA)
1
10
-
2
10
-
1
10
4
10
3
10
2
10
10
5
10
-
3
V
R
(V)
0
4
3
1
2
(4)
(3)
(2)
(1)
0
1
2
3
4
0.4
0.8
mlc797
0.7
0.6
0.5
V
R
(V)
C
d
(pF)
9397 750 14587
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 06 -- 4 April 2005
5 of 8
Philips Semiconductors
1PSxSB17
4 V, 30 mA low C
d
Schottky barrier diode
8.
Package outline
9.
Packing information
[1]
For further information and the availability of packing methods, see
Section 14
.
Fig 4.
Package outline SOD523 (SC-79)
Fig 5.
Package outline SOD323 (SC-76)
Fig 6.
Package outline SOT666
02-12-13
Dimensions in mm
1.65
1.55
1.25
1.15
0.17
0.11
0.34
0.26
0.65
0.58
0.85
0.75
1
2
03-12-17
Dimensions in mm
0.25
0.10
0.45
0.15
2.7
2.3
1.8
1.6
0.40
0.25
1.1
0.8
1.35
1.15
1
2
Dimensions in mm
04-11-08
1.7
1.5
1.7
1.5
1.3
1.1
1
0.18
0.08
0.27
0.17
0.5
pin 1 index
1
2
3
4
5
6
0.6
0.5
0.3
0.1
Table 9:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
Package
Description
Packing quantity
3000
4000
10000
1PS66SB17
SOT666
4 mm pitch, 8 mm tape and reel
-
-115
-
1PS76SB17
SOD323
4 mm pitch, 8 mm tape and reel
-115
-135
1PS79SB17
SOD523
4 mm pitch, 8 mm tape and reel
-115
-135
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