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Электронный компонент: 1PS79SB30

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DATA SHEET
Product specification
2001 Feb 20
DISCRETE SEMICONDUCTORS
1PS79SB30
Schottky barrier diode
M3D319
2001 Feb 20
2
Philips Semiconductors
Product specification
Schottky barrier diode
1PS79SB30
FEATURES
Very low forward voltage
Very low reverse current
Guard ring protected
Ultra small SMD package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
Low power consumption applications (e.g. hand-held
applications).
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SC-79
(SOD523) ultra small SMD plastic package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
handbook, halfpage
1
2
Top view
MGU325
Fig.1
Simplified outline (SC-79; SOD523)
and symbol.
Marking code: G1.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
40
V
I
F
continuous forward current
-
200
mA
I
FRM
repetitive peak forward current
t
p
1 s;
0.5
-
300
mA
I
FSM
non-repetitive peak forward current
t = 8.3 ms half sinewave;
JEDEC method
-
1
A
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
2001 Feb 20
3
Philips Semiconductors
Product specification
Schottky barrier diode
1PS79SB30
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: pulse width = 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SC-79 (SOD523) standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
forward voltage
see Fig.2
I
F
= 0.1 mA
190
220
mV
I
F
= 1 mA
250
290
mV
I
F
= 10 mA
320
360
mV
I
F
= 100 mA
440
500
mV
I
F
= 200 mA
520
600
mV
I
R
continuous reverse current
V
R
= 25 V; note 1; see Fig.3
-
0.5
A
C
d
diode capacitance
V
R
= 1 V; f = 1 MHz; see Fig.4
-
20
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient note 1
450
K/W
2001 Feb 20
4
Philips Semiconductors
Product specification
Schottky barrier diode
1PS79SB30
GRAPHICAL DATA
handbook, halfpage
1.2
0.8
0.4
0
(1)
(3)
VF (V)
IF
(mA)
10
3
10
2
10
1
10
-
1
MLD546
(2)
Fig.2
Forward current as a function of forward
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
40
20
10
0
VR (V)
IR
(
A)
30
10
3
10
2
10
1
10
-
1
MLD547
(1)
(2)
(3)
Fig.3
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 125
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
0
VR (V)
Cd
(pF)
10
20
40
20
0
16
30
12
8
4
MLD548
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
2001 Feb 20
5
Philips Semiconductors
Product specification
Schottky barrier diode
1PS79SB30
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD523
SC-79
98-11-25
Plastic surface mounted package; 2 leads
SOD523
0
0.5
1 mm
scale
D
1
2
HE
E
bp
A
c
v
M
A
A
UNIT
bp
c
D
E
v
mm
0.35
0.25
0.2
0.1
0.15
0.9
0.7
1.3
1.1
A
0.7
0.5
HE
1.7
1.5
DIMENSIONS (mm are the original dimensions)
Note
1. The marking bar indicates the cathode.
(1)