DATA SHEET
Product specification
Supersedes data of 1998 Aug 05
1999 Apr 26
DISCRETE SEMICONDUCTORS
1PS88SB48
Schottky barrier diodes
ok, halfpage
MBD128
1999 Apr 26
2
Philips Semiconductors
Product specification
Schottky barrier diodes
1PS88SB48
FEATURES
Ultra fast switching speed
Low forward voltage
Small SMD package
Guard ring protected
Absorbs very high surge pulse
Low capacitance.
APPLICATIONS
High speed switching
Circuit protection
Voltage clamping.
DESCRIPTION
The 1PS88SB48 consists of two dual
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the small SMD SC-88 plastic
package.
PINNING
PIN
DESCRIPTION
1
anode (a1)
2
anode (a2)
3
common cathode (k1)
4
anode (a3)
5
anode (a4)
6
common cathode (k2)
Fig.1 Simplified outline (SC-88) and symbol.
Marking code: 8t5.
handbook, halfpage
6
5
4
1
2
3
MGL160
MSA370
1
2
3
6
5
4
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
-
40
V
I
F
continuous forward current
-
120
mA
I
FRM
repetitive peak forward current
t
p
1 s;
0.5
-
120
mA
I
FSM
non-repetitive peak forward current
t
p
< 10 ms
-
200
mA
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 26
3
Philips Semiconductors
Product specification
Schottky barrier diodes
1PS88SB48
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SC-88 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V
F
continuous forward voltage
see Fig.2
I
F
= 1 mA
380
mV
I
F
= 10 mA
500
mV
I
F
= 40 mA
1
V
I
R
continuous reverse current
V
R
= 30 V; note 1; see Fig.3
1
A
V
R
= 40 V; note 1; see Fig.3
10
A
C
d
diode capacitance
V
R
= 0; f = 1 MHz; see Fig.5
5
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
416
K/W
1999 Apr 26
4
Philips Semiconductors
Product specification
Schottky barrier diodes
1PS88SB48
GRAPHICAL DATA
Fig.2
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
10
2
10
1
10
2
0
MLC361 - 1
0.6
0.8
0.4
0.2
1.0
V (V)
10
1
I F
(mA)
F
(1)
(2)
(3)
(4)
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
(4) T
amb
=
-
40
C.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
10
3
10
2
10
-
1
10
-
2
10
1
0
MLC362
20
10
40
30
VR (V)
IR
(
A)
(1)
(2)
(3)
Fig.4
Differential forward resistance as a function
of forward current; typical values.
f = 10 KHz.
handbook, halfpage
MLC364
1
10
10
2
1
10
3
10
10
2
10
1
r diff
(
)
I (mA)
F
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
handbook, halfpage
0
10
20
40
30
5
0
4
MLC363
3
2
1
VR (V)
Cd
(pF)
1999 Apr 26
5
Philips Semiconductors
Product specification
Schottky barrier diodes
1PS88SB48
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT363
SC-88
w
B
M
bp
D
e1
e
pin 1
index
A
A1
Lp
Q
detail X
HE
E
v
M
A
A
B
y
0
1
2 mm
scale
c
X
1
3
2
4
5
6
Plastic surface mounted package; 6 leads
SOT363
UNIT
A1
max
bp
c
D
E
e
1
HE
Lp
Q
y
w
v
mm
0.1
0.30
0.20
2.2
1.8
0.25
0.10
1.35
1.15
0.65
e
1.3
2.2
2.0
0.2
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.25
0.15
A
1.1
0.8
97-02-28
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