Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- PINNING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 11
DISCRETE SEMICONDUCTORS
2N1613
NPN medium power transistor
book, halfpage
M3D111
1997 Apr 11
2
Philips Semiconductors
Product specification
NPN medium power transistor
2N1613
FEATURES
Low current (max. 500 mA)
Low voltage (max. 50 V).
APPLICATIONS
High-speed switching and amplification.
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
Fig.1
Simplified outline (TO-39) and symbol.
handbook, halfpage
3
1
2
MAM317
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
75
V
V
CEO
collector-emitter voltage
open base
-
50
V
I
CM
peak collector current
-
1
A
P
tot
total power dissipation
T
amb
25
C
-
0.8
W
h
FE
DC current gain
I
C
= 150 mA; V
CE
= 10 V
40
120
f
T
transition frequency
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
60
-
MHz
1997 Apr 11
3
Philips Semiconductors
Product specification
NPN medium power transistor
2N1613
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Refer to TO-39 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
75
V
V
CEO
collector-emitter voltage
open base
-
50
V
V
EBO
emitter-base voltage
open collector
-
7
V
I
C
collector current (DC)
-
500
mA
I
CM
peak collector current
-
1
A
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
amb
25
C
-
0.8
W
T
case
= 100
C
-
1.7
W
T
case
25
C
-
3
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
200
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
218
K/W
R
th j-c
thermal resistance from junction to case
58.3
K/W
1997 Apr 11
4
Philips Semiconductors
Product specification
NPN medium power transistor
2N1613
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 60 V
-
10
nA
I
E
= 0; V
CB
= 60 V; T
amb
= 150
C
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
10
nA
h
FE
DC current gain
I
C
= 0.1 mA; V
CE
= 10 V
20
-
I
C
= 10 mA; V
CE
= 10 V; note 1
35
-
I
C
= 10 mA; V
CE
= 10 V; T
amb
=
-
55
C 20
-
I
C
= 150 mA; V
CE
= 10 V; note 1
40
120
I
C
= 500 mA; V
CE
= 10 V; note 1
20
-
V
CEsat
collector-emitter saturation voltage I
C
= 150 mA; I
B
= 15 mA
-
1.5
V
V
BEsat
base-emitter saturation voltage
I
C
= 150 mA; I
B
= 15 mA
-
1.3
V
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V
-
25
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V
-
80
pF
f
T
transition frequency
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
60
-
MHz
1997 Apr 11
5
Philips Semiconductors
Product specification
NPN medium power transistor
2N1613
PACKAGE OUTLINE
UNIT
a
b
D
D
1
j
k
L
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
6.60
6.35
0.48
0.41
9.39
9.08
8.33
8.18
0.85
0.75
0.95
0.75
14.2
12.7
0.2
45
DIMENSIONS (mm are the original dimensions)
SOT5/11
TO-39
97-04-11
k
j
D
A
L
seating plane
b
D
1
0
5
10 mm
scale
A
5.08
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
A
w
A
M
M
B
M
B
a
1
2
3
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