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DATA SHEET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 28
DISCRETE SEMICONDUCTORS
2N1711
NPN medium power transistor
book, halfpage
M3D111
1997 May 28
2
Philips Semiconductors
Product specification
NPN medium power transistor
2N1711
FEATURES
High current (max. 500 mA)
Low voltage (max. 50 V).
APPLICATIONS
DC and wideband amplifiers.
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
handbook, halfpage
3
1
2
MAM317
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
75
V
V
CEO
collector-emitter voltage
open base
-
50
V
I
CM
peak collector current
-
1
A
P
tot
total power dissipation
T
amb
25
C
-
0.8
W
h
FE
DC current gain
I
C
= 150 mA; V
CE
= 10 V
100
300
f
T
transition frequency
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
70
-
MHz
1997 May 28
3
Philips Semiconductors
Product specification
NPN medium power transistor
2N1711
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
75
V
V
CEO
collector-emitter voltage
open base
-
50
V
V
EBO
emitter-base voltage
open collector
-
7
V
I
C
collector current (DC)
-
500
mA
I
CM
peak collector current
-
1
A
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
amb
25
C
-
0.8
W
T
case
100
C
-
1.7
W
T
case
25
C
-
3
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
200
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air
219
K/W
R
th j-c
thermal resistance from junction to case
58.3
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 60 V
-
10
nA
I
E
= 0; V
CB
= 60 V; T
amb
= 150
C
-
10
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
5
nA
h
FE
DC current gain
I
C
= 10
A; V
CE
= 10 V
20
-
I
C
= 0.1 mA; V
CE
= 10 V
35
-
I
C
= 10 mA; V
CE
= 10 V; note 1
75
-
I
C
= 10 mA; V
CE
= 10 V; T
amb
=
-
55
C
35
-
I
C
= 150 mA; V
CE
= 10 V; note 1
100
300
I
C
= 500 mA; V
CE
= 10 V; note 1
40
-
V
CEsat
collector-emitter saturation voltage
I
C
= 150 mA; I
B
= 15 mA; note 1
-
500
mV
V
BEsat
base-emitter saturation voltage
I
C
= 150 mA; I
B
= 15 mA; note 1
-
1.3
V
f
T
transition frequency
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
70
-
MHz
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
25
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
80
pF
1997 May 28
4
Philips Semiconductors
Product specification
NPN medium power transistor
2N1711
PACKAGE OUTLINE
UNIT
a
b
D
D
1
j
k
L
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
6.60
6.35
0.48
0.41
9.39
9.08
8.33
8.18
0.85
0.75
0.95
0.75
14.2
12.7
0.2
45
DIMENSIONS (mm are the original dimensions)
SOT5/11
TO-39
97-04-11
k
j
D
A
L
seating plane
b
D
1
0
5
10 mm
scale
A
5.08
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
A
w
A
M
M
B
M
B
a
1
2
3
1997 May 28
5
Philips Semiconductors
Product specification
NPN medium power transistor
2N1711
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.