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Электронный компонент: 2N2369

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DATA SHEET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 20
DISCRETE SEMICONDUCTORS
2N2369
NPN switching transistor
M3D125
1997 Jun 20
2
Philips Semiconductors
Product specification
NPN switching transistor
2N2369
FEATURES
Low current (max. 200 mA)
Low voltage (max. 15 V).
APPLICATIONS
High-speed switching
VHF amplification.
DESCRIPTION
NPN switching transistor in a TO-18 metal package.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
Fig.1 Simplified outline (TO-18) and symbol.
handbook, halfpage
MAM264
1
3
2
3
1
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
40
V
V
CEO
collector-emitter voltage
open base
-
15
V
I
C
collector current (DC)
-
200
mA
P
tot
total power dissipation
T
amb
25
C
-
360
mW
h
FE
DC current gain
I
C
= 10 mA; V
CE
= 1 V; T
j
= 25
C
40
120
f
T
transition frequency
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
500
-
MHz
t
off
turn-off time
I
Con
= 10 mA; I
Bon
= 3 mA; I
Boff
=
-
1.5 mA
-
30
ns
1997 Jun 20
3
Philips Semiconductors
Product specification
NPN switching transistor
2N2369
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
40
V
V
CEO
collector-emitter voltage
open base
-
15
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
200
mA
I
CM
peak collector current
t
p
= 10 ms
-
300
mA
I
BM
peak base current
-
100
mA
P
tot
total power dissipation
T
amb
25
C
-
360
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
200
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air
480
K/W
R
th j-c
thermal resistance from junction to case
145
K/W
1997 Jun 20
4
Philips Semiconductors
Product specification
NPN switching transistor
2N2369
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.01.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 20 V
-
400
nA
I
E
= 0; V
CB
= 20 V; T
j
= 125
C
-
30
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 4 V
-
100
nA
h
FE
DC current gain
I
C
= 10 mA; V
CE
= 1 V; note 1
40
120
I
C
= 10 mA; V
CE
= 1 V; T
j
=
-
55
C; note 1
20
-
I
C
= 100 mA; V
CE
= 2 V; note 1
20
-
V
CEsat
collector-emitter saturation voltage
I
C
= 10 mA; I
B
= 1 mA
-
250
mV
V
BEsat
base-emitter saturation voltage
I
C
= 10 mA; I
B
= 1 mA
700
850
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
-
4
pF
f
T
transition frequency
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
500
-
MHz
Switching times (between 10% and 90% levels); see Fig.2
t
on
turn-on time
I
Con
= 10 mA; I
Bon
= 3 mA; I
Boff
=
-
1.5 mA
-
10
ns
t
d
delay time
-
4
ns
t
r
rise time
-
6
ns
t
off
turn-off time
-
30
ns
t
s
storage time
-
15
ns
t
f
fall time
-
15
ns
V
i
= 0.5 V to 4.2 V; T = 500
s; t
p
= 10
s; t
r
= t
f
3 ns.
R1 = 56
; R2 = 1 k
; R
B
= 1 k
; R
C
= 270
.
V
BB
= 0.2 V; V
CC
= 2.7 V.
Oscilloscope input impedance Z
i
= 50
.
handbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB
(probe)
450
(probe)
450
oscilloscope
oscilloscope
VBB
Vi
VCC
Fig.2 Test circuit for switching times.
1997 Jun 20
5
Philips Semiconductors
Product specification
NPN switching transistor
2N2369
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT18/13
TO-18
B11/C7 type 3
97-04-18
a
k
D
A
L
seating plane
b
D
1
0
5
10 mm
scale
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
w
A
M
M
B
M
A
1
2
3
j
B
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
w
mm
5.31
4.74
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
0.40
45
A
a
b
D
D1
j
k
L
2.54