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Электронный компонент: 2N3553

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DATA SHEET
Product specification
Supersedes data of October 1981
File under Discrete Semiconductors, SC08a
1995 Oct 27
DISCRETE SEMICONDUCTORS
2N3553
Silicon planar epitaxial
overlay transistor
1995 Oct 27
2
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistor
2N3553
APPLICATIONS
The 2N3553 is intended for use in VHF and UHF
transmitting applications.
DESCRIPTION
The device is a silicon NPN overlay transistor in a TO-39
metal package with the collector connected to the case.
PINNING - TO-39/3
PIN
DESCRIPTION
1
emitter
2
base
3
collector
Fig.1 Simplified outline.
handbook, halfpage
MBB199
1
2
3
QUICK REFERENCE DATA
RF performance
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
CEX
collector-emitter voltage
I
C
200 mA; V
BE
=
-
1.5 V
65
V
V
CEO
collector-emitter voltage
open base; I
C
200 mA
40
V
I
CM
peak collector current
1.0
A
P
tot
total power dissipation
up to T
mb
= 25
C
7.0
W
T
j
junction temperature
200
C
f
T
transition frequency
I
C
= 125 mA; V
CE
= 28 V
500
-
f
(MHz)
V
CE
(V)
P
o
(W)
G
p
(dB)
(%)
175
28
2.5
>10
>50
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1995 Oct 27
3
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistor
2N3553
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
65
V
V
CEX
collector-emitter voltage
I
C
200 mA; V
BE
=
-
1.5 V
-
65
V
V
CEO
collector-emitter voltage
open base; I
C
200 mA
-
40
V
V
EBO
emitter-base voltage
open collector
-
4
V
I
C
collector current (DC)
-
0.35
A
I
CM
peak collector current
-
1
A
P
tot
total power dissipation
up to T
mb
= 25
C
-
7
W
T
stg
storage temperature
-
65
+200
C
T
j
junction temperature
-
200
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-mb
thermal resistance from junction to mounting base
25
K/W
Fig.2 DC SOAR.
(1) All frequencies, including DC.
(2) f
1 MHz.
(3) Allowed during switching off, provided the transistor is cut-off
with V
BB
-
1.5 V; R
BE
33
; I
C
200 mA and the transient
energy
0.5 mW.
handbook, halfpage
MGC928
10
1
10
10
2
1
10
-2
10
-1
VCE (V)
IC
(A)
(1)
(2)
(3)
Fig.3 Power derating curve.
handbook, halfpage
0
10
Ptot
(W)
5
0
100
200
Tmb (
o
C)
MGC927
1995 Oct 27
4
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistor
2N3553
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. Pulsed through an inductor of 25 mH;
= 0.5; f = 50 Hz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
open emitter; I
C
= 0.25 mA
65
-
-
V
V
(BR)CEO
collector-emitter breakdown voltage
open base; I
C
up to 200 mA;
note 1
40
-
-
V
V
(BR)CEX
collector-emitter breakdown voltage
I
C
up to 200 mA; V
BE
=
-
1.5 V;
R
B
= 33
; note 1
65
-
-
V
V
(BR)EBO
emitter-base breakdown voltage
open collector; I
E
= 0.25 mA
4
-
-
V
V
BE
base-emitter voltage
I
C
= 250 mA; V
CE
= 5 V
-
-
1.5
V
V
CEsat
collector-emitter saturation voltage
I
C
= 250 mA; I
B
= 50 mA
-
-
1.0
V
I
CEO
collector leakage current
open base; V
CE
= 30 V
-
-
0.1
mA
h
FE
DC current gain
V
CE
= 5 V; I
C
= 125 mA
15
-
200
V
CE
= 5 V; I
C
= 250 mA
10
-
100
f
T
transition frequency
I
C
= 125 mA; V
CE
= 28 V
-
500
-
MHz
Rho
ie
)
real part of input impedance
I
C
= 125 mA; V
CE
= 28 V;
f = 200 MHz
-
-
20
C
c
collector capacitance
V
CB
= 28 V; I
E
= i
e
= 0;
f = 1 MHz
-
-
10
pF
Fig.4
DC current gain as a function of collector
current; typical values.
handbook, halfpage
0
100
200
300
400
hFE
60
20
0
40
MGC935
500
IC (mA)
Fig.5
Collector capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
0
5
20
15
10
0
20
40
60
(pF)
Cc
VCB (V)
MGC930
1995 Oct 27
5
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistor
2N3553
APPLICATION INFORMATION
RF performance at T
mb
= 25
C.
Ruggedness
The transistor is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 varied through all phases,
under the conditions: V
CE
= 28 V; f = 175 MHz; T
mb
= 25
C; P
o
= 2.5 W.
f
(MHz)
V
CE
(V)
P
o
(W)
G
p
(dB)
(%)
175
28
2.5
>10
>50
(1) The length of the external emitter wire is 1.6 mm.
Fig.6 Test circuit at 175 MHz.
handbook, full pagewidth
C1
input
50
output
50
L1
C2
C5
C3
C4
MGC926
L2
L4
L3
DUT
+
VCC
(1)