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Электронный компонент: 2N3866

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DATA SHEET
Product specification
Supersedes data of August 1986
File under Discrete Semiconductors, SC08a
1995 Oct 27
DISCRETE SEMICONDUCTORS
2N3866; 2N4427
Silicon planar epitaxial
overlay transistors
1995 Oct 27
2
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistors
2N3866; 2N4427
DESCRIPTION
NPN overlay transistors in TO-39 metal packages with the
collector connected to the case. The devices are primarily
intended for class-A, B or C amplifiers, frequency multiplier
and oscillator circuits.
APPLICATIONS
The transistors are intended for use in output, driver or
pre-driver stages in VHF and UHF equipment.
PINNING - TO-39/1
PIN
DESCRIPTION
1
emitter
2
base
3
collector
Fig.1 Simplified outline.
handbook, halfpage
MBB199
1
2
3
QUICK REFERENCE DATA
RF performance
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CER
collector-emitter voltage
R
BE
= 10
2N3866
-
55
V
2N4427
-
40
V
V
CEO
collector-emitter voltage
open base
2N3866
-
30
V
2N4427
-
20
V
V
EBO
emitter-base voltage
open collector
2N3866
-
3.5
V
2N4427
-
2.0
V
I
C
collector current (DC)
-
0.4
A
I
C(AV)
average collector current
measured over any 20 ms
period
-
0.4
A
P
tot
total power dissipation
up to T
mb
= 25
C
-
3.5
W
f
T
transition frequency
I
C
= 50 mA; V
CE
= 15 V;
f = 200 MHz
500
-
MHz
T
j
junction temperature
-
200
C
TYPE NUMBER
f
(MHz)
V
CE
(V)
P
o
(W)
G
p
(dB)
(%)
2N3866
400
28
1
>10
>45
2N4427
175
12
1
>10
>50
1995 Oct 27
3
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistors
2N3866; 2N4427
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
2N3866
-
55
V
2N4427
-
40
V
V
CER
collector-emitter voltage
R
BE
= 10
2N3866
-
55
V
2N4427
-
40
V
V
CEO
collector-emitter voltage
open base
2N3866
-
30
V
2N4427
-
20
V
V
EBO
emitter-base voltage
open collector
2N3866
-
3.5
V
2N4427
-
2.0
V
I
C
collector current (DC)
-
0.4
A
I
C(AV)
average collector current
measured over any 20 ms
period
-
0.4
A
I
CM
collector current peak value
-
0.4
A
P
tot
total power dissipation
up to T
mb
= 25
C
-
3.5
W
T
stg
storage temperature
-
65
+200
C
T
j
junction temperature
-
200
C
THERMAL CHARACTERISTICS
Notes
1. Mounted with top clamping washer 56218.
2. Mounted with top clamping washer 56218 and a boron nitride washer for electrical insulation.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction
to ambient in free air
200
K/W
R
th j-mb
thermal resistance from junction
to mounting base
50
K/W
R
th mb-h
thermal resistance from
mounting base to heatsink
note 1
1.0
K/W
note 2
2.5
K/W
1995 Oct 27
4
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistors
2N3866; 2N4427
Fig.2 DC SOAR.
T
mb
= 25
C.
(1) 2N4427.
(2) 2N3866.
handbook, halfpage
10
2
MGC589
10
1
10
2
1
10
1
IC
VCE (V)
(A)
(1) (2)
Fig.3 Power derating curve.
handbook, halfpage
0
50
100
200
4
3
1
0
2
MGC590
150
Ptot
Tmb (
oC)
(W)
1995 Oct 27
5
Philips Semiconductors
Product specification
Silicon planar epitaxial
overlay transistors
2N3866; 2N4427
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
open emitter; I
C
= 100
A
2N3866
55
-
V
2N4427
40
-
V
V
(BR)CEO
collector-emitter breakdown voltage
open base; I
C
= 5 mA
2N3866
30
-
V
2N4427
20
-
V
V
(BR)CER
collector-emitter breakdown voltage
R
BE
= 10
; I
C
= 5 mA
2N3866
55
-
V
2N4427
40
-
V
V
(BR)EBO
emitter-base breakdown voltage
open collector; I
E
= 100
A
2N3866
3.5
-
V
2N4427
2
-
V
V
CEsat
collector-emitter saturation voltage
I
C
= 100 mA; I
B
= 20 mA
2N3866
-
1
V
2N4427
-
0.5
V
I
CEO
collector leakage current
2N3866
open base; V
CE
= 28 V
-
20
A
2N4427
open base; V
CE
= 12 V
-
20
A
h
FE
DC current gain
2N3866
I
C
= 50 mA; V
CE
= 5 V
10
200
2N3866
I
C
= 360 mA; V
CE
= 5 V
5
-
2N4427
I
C
= 100 mA; V
CE
= 5 V
10
200
2N4427
I
C
= 360 mA; V
CE
= 5 V
5
-
f
T
transition frequency
I
C
= 50 mA; V
CE
= 15 V; f = 200 MHz
500
-
MHz
C
c
collector capacitance
2N3866
V
CB
= 28 V; I
E
= I
e
= 0; f = 1 MHz
-
3
pF
2N4427
V
CB
= 12 V; I
E
= I
e
= 0; f = 1 MHz
-
4
pF
APPLICATION INFORMATION
Table 1
RF performance at T
mb
= 25
C.
TYPE
NUMBER
f
(MHz)
V
CE
(V)
P
o
(W)
G
p
(dB)
I
C
(mA)
(%)
2N3866
100
28
1.8
>10
<107
>60
250
28
1.5
>10
<107
>50
400
28
1.0
>10
<79
>45
2N4427
175
12
1.0
>10
<167
>50
470
12
0.4
>10
67
50