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Электронный компонент: 2N4401

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DATA SHEET
Product specification
Supersedes data of 1997 May 07
1999 Apr 23
DISCRETE SEMICONDUCTORS
2N4401
NPN switching transistor
book, halfpage
M3D186
1999 Apr 23
2
Philips Semiconductors
Product specification
NPN switching transistor
2N4401
FEATURES
High current (max. 600 mA)
Low voltage (max. 40 V).
APPLICATIONS
Industrial and consumer switching applications.
DESCRIPTION
NPN switching transistor in a TO-92; SOT54 plastic
package. PNP complement: 2N4403.
PINNING
PIN
DESCRIPTION
1
collector
2
base
3
emitter
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
handbook, halfpage
1
3
2
MAM279
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
60
V
V
CEO
collector-emitter voltage
open base
-
40
V
V
EBO
emitter-base voltage
open collector
-
6
V
I
C
collector current (DC)
-
600
mA
I
CM
peak collector current
-
800
mA
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
630
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 23
3
Philips Semiconductors
Product specification
NPN switching transistor
2N4401
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
200
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 60 V
-
50
nA
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 6 V
-
50
nA
h
FE
DC current gain
V
CE
= 1 V; see Fig.2
I
C
= 0.1 mA
20
-
I
C
= 1 mA
40
-
I
C
= 10 mA
80
-
I
C
= 150 mA; note 1
100
300
I
C
= 500 mA; V
CE
= 2 V; note 1
40
-
V
CEsat
collector-emitter saturation voltage
I
C
= 150 mA; I
B
= 15 mA; note 1
-
400
mV
I
C
= 500 mA; I
B
= 50 mA; note 1
-
750
mV
V
BEsat
base-emitter saturation voltage
I
C
= 150 mA; I
B
= 15 mA; note 1
-
950
mV
I
C
= 500 mA; I
B
= 50 mA; note 1
-
1.2
V
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
-
6.5
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
-
30
pF
f
T
transition frequency
I
C
= 20 mA; V
CE
= 10 V; f = 100 MHz
250
-
MHz
Switching times (between 10% and 90% levels); see Fig.3
t
on
turn-on time
I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
=
-
15 mA
-
35
ns
t
d
delay time
-
15
ns
t
r
rise time
-
20
ns
t
off
turn-off time
-
250
ns
t
s
storage time
-
200
ns
t
f
fall time
-
60
ns
1999 Apr 23
4
Philips Semiconductors
Product specification
NPN switching transistor
2N4401
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
300
100
200
MGD811
10
-
1
1
10
10
2
10
3
hFE
IC mA
VCE = 1 V
handbook, full pagewidth
RC
R2
R1
DUT
MLB826
Vo
RB
(probe)
450
(probe)
450
oscilloscope
oscilloscope
VBB
Vi
VCC
Fig.3 Test circuit for switching times.
V
i
= 9.5 V; T = 500
s; t
p
=
10
s; t
r
= t
f
3 ns.
R1 = 68
; R2 = 325
; R
B
= 325
; R
C
= 160
.
V
BB
=
-
3.5 V; V
CC
= 29.5 V.
Oscilloscope: input impedance Z
i
= 50
.
1999 Apr 23
5
Philips Semiconductors
Product specification
NPN switching transistor
2N4401
PACKAGE OUTLINE
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1
(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54
TO-92
SC-43
97-02-28
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
e1
e
1
2
3