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DATA SHEET
Preliminary specification
Supersedes data of 1998 Nov 10
1999 May 04
DISCRETE SEMICONDUCTORS
2PC4617J
NPN general purpose transistor
M3D425
1999 May 04
2
Philips Semiconductors
Preliminary specification
NPN general purpose transistor
2PC4617J
FEATURES
Power dissipation comparable to SOT23
Low output capacitance
Low saturation voltage V
CEsat
Low current (max. 100 mA)
Low voltage (max. 50 V).
APPLICATIONS
General purpose switching and amplification in
miniaturized application areas such as telecom and
multimedia.
DESCRIPTION
NPN transistor encapsulated in an ultra small plastic
SMD SC-89 (SOT490) package.
PNP complement: 2PA1774J.
MARKING
TYPE NUMBER
MARKING CODE
2PC4617JQ
ZQ
2PC4617JR
ZR
2PC4617JS
ZS
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1
Simplified outline (SC-89; SOT490) and
symbol.
handbook, halfpage
MAM410
1
2
3
1
2
Top view
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
50
V
V
CEO
collector-emitter voltage
open base
-
50
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
100
mA
I
CM
peak collector current
-
200
mA
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 May 04
3
Philips Semiconductors
Preliminary specification
NPN general purpose transistor
2PC4617J
THERMAL CHARACTERISTICS
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-a
thermal resistance from junction to ambient in free air; note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 30 V
-
100
nA
I
E
= 0; V
CB
= 30 V; T
j
= 150
C
-
5
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 4 V
-
100
nA
h
FE
DC current gain
I
C
= 1 mA; V
CE
= 6 V; note 1
2PC4617JQ
120
270
2PC4617JR
180
390
2PC4617JS
270
560
V
CEsat
collector-emitter saturation
voltage
I
C
= 50 mA; I
B
= 5 mA; note 1
-
200
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 12 V; f = 1 MHz
-
1.5
pF
f
T
transition frequency
I
C
= 2 mA; V
CE
= 12 V; f = 100 MHz;
note 1
100
-
MHz
1999 May 04
4
Philips Semiconductors
Preliminary specification
NPN general purpose transistor
2PC4617J
PACKAGE OUTLINE
UNIT
b
p
c
D
E
e
1
H
E
L
p
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
98-10-23
IEC
JEDEC
EIAJ
mm
0.33
0.23
0.2
0.1
1.7
1.5
0.95
0.75
0.5
e
1.0
1.7
1.5
0.1
0.1
DIMENSIONS (mm are the original dimensions)
0.5
0.3
SOT490
SC-89
bp
D
e1
e
A
Lp
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
0.8
0.6
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT490
1999 May 04
5
Philips Semiconductors
Preliminary specification
NPN general purpose transistor
2PC4617J
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.