Philips
Semiconductors
74ABT2952
Octal registered transceiver (3-State)
Product specification
Supersedes data of 1995 Jun 15
1998 Feb 11
INTEGRATED CIRCUITS
IC23 Data Handbook
Philips Semiconductors
Product specification
74ABT2952
Octal registered transceiver (3-State)
2
1998 Feb 11
853-1554 18949
FEATURES
8-bit registered transceiver
Independent registers for A and B buses
Output capability: +64mA/32mA
Latch-up protection exceeds 500mA per JEDEC Std 17
ESD protection exceeds 2000V per MIL STD 883 Method 3015
and 200V per Machine Model
Power-up 3-State
Power-up reset
Live insertion/extraction permitted
DESCRIPTION
The 74ABT2952 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.
The 74ABT2952 device is an 8-bit registered transceiver. Two 8-bit
back-to-back registers store data flowing in both directions between
two bidirectional buses. Data applied to the inputs is entered and
stored on the rising edge of the Clock (CPXX) provided that the
Clock Enable (CEXX) is Low. The data is then present at the 3-State
output buffers, but is only accessible when the Output Enable
(OEXX) is Low. Data flow from A inputs to B outputs is the same as
for B inputs to A outputs.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
T
amb
= 25
C; GND = 0V
TYPICAL
UNIT
t
PLH
t
PHL
Propagation delay
CPBA to An or
CPAB to Bn
C
L
= 50pF; V
CC
= 5V
5.7
ns
C
IN
Input capacitance
V
I
= 0V or V
CC
4
pF
C
I/O
I/O capacitance
Outputs disabled; V
O
= 0V or V
CC
7
pF
I
CCZ
Total supply current
Outputs disabled; V
CC
=5.5V
110
A
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE
OUTSIDE NORTH AMERICA
NORTH AMERICA
DWG NUMBER
24-Pin Plastic DIP
40
C to +85
C
74ABT2952 N
74ABT2952 N
SOT222-1
24-Pin plastic SO
40
C to +85
C
74ABT2952 D
74ABT2952 D
SOT137-1
24-Pin Plastic SSOP Type II
40
C to +85
C
74ABT2952 DB
74ABT2952 DB
SOT340-1
24-Pin Plastic TSSOP Type I
40
C to +85
C
74ABT2952 PW
7ABT2952PW DH
SOT355-1
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10
15
16
17
18
19
20
21
22
23
24
B7
B6
B5
B4
B3
B2
B1
B0
OEAB
A0
CPAB
A1
A2
A3
A4
A5
A6
A7
V
CC
OEBA
11
14
CEAB
CPBA
12
13
GND
CEBA
SA00114
PIN DESCRIPTION
PIN
NUMBER
SYMBOL
NAME AND FUNCTION
10, 14
CPAB /
CPBA
Clock input A to B / Clock input B to A
11, 13
CEAB /
CEBA
Clock enable input A to B / Clock
enable input B to A
16, 17, 18,
19, 20, 21,
22, 23
A0 A7
Data inputs/outputs (A side)
1, 2, 3, 4, 5,
6, 7, 8
B0 B7
Data outputs/outputs (B side)
9, 15
OEAB /
OEBA
Output enable inputs
12
GND
Ground (0V)
24
V
CC
Positive supply voltage
Philips Semiconductors
Product specification
74ABT2952
Octal registered transceiver (3-State)
1998 Feb 11
3
LOGIC SYMBOL
16 17 18
19
20
21 22
23
A0 A1 A2 A3 A4 A5 A6 A7
B0 B1 B2 B3 B4 B5 B6 B7
8
7
6
5
4
3
2
1
15
9
10
14
11
13
CPAB
CPBA
CEAB
CEBA
OEBA
OEAB
SA00115
LOGIC SYMBOL (IEEE/IEC)
1, 4, 5
2, 3, 6
SA00116
11
13
15
9
10
14
16
17
18
19
20
21
22
23
EN1
EN2
EN3
EN4
C5
C6
8
7
6
5
4
3
2
1
FUNCTION TABLE for Register An or Bn
INPUTS
INTERNAL
OPERATING
An or Bn
CPXX
CEXX
Q
MODE
X
X
H
NC
Hold data
L
H
L
L
L
H
Load data
H = High voltage level
L
= Low voltage level
= LowtoHigh transition
X = Don't care
XX = AB or BA
NC= No change
FUNCTION TABLE for Output Enable
INPUTS
INTERNAL
An or Bn
OPERATING
OEXX
Q
OUTPUTS
MODE
H
X
Z
Disable outputs
L
L
L
H
L
H
Enable outputs
H = High voltage level
L
= Low voltage level
X = Don't care
XX = AB or BA
Z = High impedance "off " state
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
V
CC
DC supply voltage
0.5 to +7.0
V
I
IK
DC input diode current
V
I
< 0
18
mA
V
I
DC input voltage
3
1.2 to +7.0
V
I
OK
DC output diode current
V
O
< 0
50
mA
V
OUT
DC output voltage
3
output in Off or High state
0.5 to +5.5
V
I
OUT
DC output current
output in Low state
128
mA
T
stg
Storage temperature range
65 to 150
C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Philips Semiconductors
Product specification
74ABT2952
Octal registered transceiver (3-State)
1998 Feb 11
4
LOGIC DIAGRAM
CEAB
CE
Q
CP
D
CE
Q
CP
D
DETAIL A
DETAIL A X 7
CPAB
OEAB
A0
A1
A2
CPBA
OEBA
B0
A3
A4
A5
A6
A7
CEBA
B1
B2
B3
B4
B5
B6
B7
8
7
6
5
4
3
2
1
11
10
9
16
17
18
14
15
19
20
21
22
23
13
SA00117
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMITS
UNIT
SYMBOL
PARAMETER
Min
Max
UNIT
V
CC
DC supply voltage
4.5
5.5
V
V
I
Input voltage
0
V
CC
V
V
IH
High-level input voltage
2.0
V
V
IL
Low-level Input voltage
0.8
V
I
OH
High-level output current
32
mA
I
OL
Low-level output current
64
mA
t/
v
Input transition rise or fall rate
0
10
ns/V
T
amb
Operating free-air temperature range
40
+85
C
Philips Semiconductors
Product specification
74ABT2952
Octal registered transceiver (3-State)
1998 Feb 11
5
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
T
amb
= +25
C
T
amb
= 40
C
to +85
C
UNIT
Min
Typ
Max
Min
Max
V
IK
Input clamp voltage
V
CC
= 4.5V; I
IK
= 18mA
0.9
1.2
1.2
V
V
CC
= 4.5V; I
OH
= 3mA; V
I
= V
IL
or V
IH
2.5
3.5
2.5
V
V
OH
High-level output voltage
V
CC
= 5.0V; I
OH
= 3mA; V
I
= V
IL
or V
IH
3.0
4.0
3.0
V
V
CC
= 4.5V; I
OH
= 32mA; V
I
= V
IL
or V
IH
2.0
2.6
2.0
V
V
OL
Low-level output voltage
V
CC
= 4.5V; I
OL
= 64mA; V
I
= V
IL
or V
IH
0.42
0.55
0.55
V
V
RST
Power-up output low
voltage
3
V
CC
= 5.5V; I
O
= 1mA; V
I
= GND or V
CC
0.13
0.55
0.55
V
I
I
Input leakage
Control pins
V
CC
= 5.5V; V
I
= GND or 5.5V
0.01
1.0
1.0
A
current
Data pins
V
CC
= 5.5V; V
I
= GND or 5.5V
5
100
100
A
I
OFF
Power-off leakage current
V
CC
= 0.0V; V
O
= 4.5V; V
I
= 0.0V or 5.5V
5.0
100
100
A
I
PU
/I
PD
Power-up/down 3-State
output current
4
V
CC
= 2.1V; V
O
= 0.5V; V
I
= GND or V
CC
;
V
OE
= Don't care
5.0
50
50
A
I
OZH
3-State output High current
V
CC
= 5.5V; V
O
= 2.7V; V
I
= V
IL
or V
IH
5.0
50
50
A
I
OZL
3-State output Low current
V
CC
= 5.5V; V
O
= 0.5V; V
I
= V
IL
or V
IH
5.0
50
50
A
I
CEX
Output High leakage current
V
CC
= 5.5V; V
O
= 5.5V; V
I
= GND or V
CC
5.0
50
50
A
I
O
Output current
1
V
CC
= 5.5V; V
O
= 2.5V
50
80
180
50
180
mA
I
CCH
V
CC
= 5.5V; Outputs High, V
I
= GND or V
CC
110
250
250
A
I
CCL
Quiescent supply current
V
CC
= 5.5V; Outputs Low, V
I
= GND or V
CC
20
30
30
mA
I
CCZ
V
CC
= 5.5V; Outputs 3-State;
V
I
= GND or V
CC
110
250
250
A
I
CC
Additional supply current per
input pin
2
V
CC
= 5.5V; one input at 3.4V,
other inputs at V
CC
or GND
0.3
1.5
1.5
mA
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. For valid test results, data must not be loaded into the flip-flops (or latches) after applying the power.
4. This parameter is valid for any V
CC
between 0V and 2.1V, with a transition time of up to 10msec. From V
CC
= 2.1V to V
CC
= 5V
10% a
transition time of up to 100
sec is permitted.
AC CHARACTERISTICS
GND = 0V; t
R
= t
F
= 2.5ns; C
L
= 50pF, R
L
= 500
LIMITS
SYMBOL
PARAMETER
WAVEFORM
T
amb
= +25
C
V
CC
= +5.0V
T
amb
= 40
C to +85
C
V
CC
= +5.0V
0.5V
UNIT
Min
Typ
Max
Min
Max
f
MAX
Maximum clock frequency
1
150
250
150
MHz
t
PLH
t
PHL
Propagation delay
CPBA to An, CPAB to Bn
1
2.0
2.5
3.2
3.8
6.6
7.2
2.0
2.5
7.6
8.2
ns
t
PZH
t
PZL
Output enable time
OEBA to An, OEAB to Bn
3
4
1.0
2.2
3.2
4.4
4.8
6.2
1.0
2.2
5.8
7.5
ns
t
PHZ
t
PLZ
Output disable time
OEBA to An, OEAB to Bn
3
4
2.0
1.5
3.6
2.8
7.6
7.1
2.0
1.5
8.1
7.6
ns
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