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Электронный компонент: 74ABT640N

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Philips
Semiconductors
74ABT640
Octal transceiver with direction pin,
inverting (3-State)
Product specification
Supersedes data of 1993 Jun 21
1998 Jan 16
INTEGRATED CIRCUITS
IC23 Data Handbook
Philips Semiconductors
Product specification
74ABT640
Octal transceiver with direction pin, inverting
(3-State)
2
1998 Jan 16
8531612 18864
FEATURES
Octal bidirectional bus interface
3-State buffers
Power-up 3-State
Live insertion/extraction permitted
Output capability: +64mA/32mA
Latch-up protection exceeds 500mA per Jedec Std 17
ESD protection exceeds 2000 V per MIL STD 883 Method 3015
and 200 V per Machine Model
DESCRIPTION
The 74ABT640 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.
The 74ABT640 device is an octal transceiver featuring inverting
3-State bus compatible outputs in both send and receive directions.
The control function implementation minimizes external timing
requirements. The device features an Output Enable (OE) input for
easy cascading and a Direction (DIR) input for direction control.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
T
amb
= 25
C; GND = 0V
TYPICAL
UNIT
t
PLH
t
PHL
Propagation delay
An to Bn or Bn to An
C
L
= 50pF; V
CC
= 5V
3.1
ns
C
IN
Input capacitance
DIR, OE
V
I
= 0V or V
CC
4
pF
C
I/O
I/O capacitance
Outputs disabled; V
O
= 0V or V
CC
7
pF
I
CCZ
Total supply current
Outputs disabled; V
CC
=5.5V
50
A
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE
OUTSIDE NORTH AMERICA
NORTH AMERICA
DWG NUMBER
20-Pin Plastic DIP
40
C to +85
C
74ABT640 N
74ABT640 N
SOT146-1
20-Pin plastic SO
40
C to +85
C
74ABT640 D
74ABT640 D
SOT163-1
20-Pin Plastic SSOP Type II
40
C to +85
C
74ABT640 DB
74ABT640 DB
SOT339-1
20-Pin Plastic TSSOP Type I
40
C to +85
C
74ABT640 PW
74ABT640PW DH
SOT360-1
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
DIR
A0
A1
A2
A3
A4
A5
A6
A7
GND
VCC
OE
B0
B1
B2
B3
B4
B5
B6
B7
SA00208
PIN DESCRIPTION
PIN
NUMBER
SYMBOL
NAME AND FUNCTION
1
DIR
Direction control input
2, 3, 4, 5,
6, 7, 8, 9
A0 A7
Data inputs/outputs (A side)
18, 17, 16,
15,
14, 13, 12, 11
B0 B7
Data inputs/outputs (B side)
19
OE
Output enable input, B side to A
side (active-Low)
10
GND
Ground (0V)
20
V
CC
Positive supply voltage
Philips Semiconductors
Product specification
74ABT640
Octal transceiver with direction pin, inverting
(3-State)
1998 Jan 16
3
LOGIC SYMBOL
A0
A1
A2
A3
A4
A5
A6
A7
B0
B1
B2
B3
B4
B5
B6
B7
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
OE
19
DIR
1
SA00209
FUNCTION TABLE
INPUTS
INPUTS/OUTPUTS
OE
DIR
An
Bn
L
L
Bn
Inputs
L
H
Inputs
An
H
X
Z
Z
H = High voltage level
L
= Low voltage level
X = Don't care
Z = High impedance "off" state
LOGIC SYMBOL (IEEE/IEC)
3
4
5
6
7
8
9
G3
3 EN1 (BA)
3 EN2 (AB)
1
2
17
16
15
14
13
12
11
19
1
2
18
SA00210
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
V
CC
DC supply voltage
0.5 to +7.0
V
I
IK
DC input diode current
V
I
< 0
18
mA
V
I
DC input voltage
3
1.2 to +7.0
V
I
OK
DC output diode current
V
O
< 0
50
mA
V
OUT
DC output voltage
3
output in Off or High state
0.5 to +5.5
V
I
OUT
DC output current
output in Low state
128
mA
T
stg
Storage temperature range
65 to 150
C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Philips Semiconductors
Product specification
74ABT640
Octal transceiver with direction pin, inverting
(3-State)
1998 Jan 16
4
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMITS
UNIT
Min
Max
V
CC
DC supply voltage
4.5
5.5
V
V
I
Input voltage
0
V
CC
V
V
IH
High-level input voltage
2.0
V
V
IL
Low-level input voltage
0.8
V
I
OH
High-level output current
32
mA
I
OL
Low-level output current
64
mA
t/
v
Input transition rise or fall rate
0
5
ns/V
T
amb
Operating free-air temperature range
40
+85
C
DC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
T
amb
= +25
C
T
amb
= 40
C
to +85
C
UNIT
Min
Typ
Max
Min
Max
V
IK
Input clamp voltage
V
CC
= 4.5V; I
IK
= 18mA
0.9
1.2
1.2
V
V
CC
= 4.5V; I
OH
= 3mA; V
I
= V
IL
or V
IH
2.5
2.9
2.5
V
V
OH
High-level output voltage
V
CC
= 5.0V; I
OH
= 3mA; V
I
= V
IL
or V
IH
3.0
3.4
3.0
V
V
CC
= 4.5V; I
OH
= 32mA; V
I
= V
IL
or V
IH
2.0
2.4
2.0
V
V
OL
Low-level output voltage
V
CC
= 4.5V; I
OL
= 64mA; V
I
= V
IL
or V
IH
0.42
0.55
0.55
V
I
I
Input leakage
Control pins
V
CC
= 5.5V; V
I
= GND or 5.5V
0.01
1.0
1.0
A
current
Data pins
V
CC
= 5.5V; V
I
= GND or 5.5V
5
100
100
A
I
OFF
Power-off leakage current
V
CC
= 0.0V; V
I
or V
O
4.5V
5.0
100
100
A
I
PU
/I
PD
Power-up/down 3-State
output current
3
V
CC
= 2.1V; V
O
= 0.5V; V
I
= GND or V
CC
;
V
OE
= Don't care
5.0
50
50
A
I
IH
+ I
OZH
3-State output High current
V
CC
= 5.5V; V
O
= 2.7V; V
I
= V
IL
or V
IH
5.0
50
50
A
I
IL
+ I
OZL
3-State output Low current
V
CC
= 5.5V; V
O
= 0.5V; V
I
= V
IL
or V
IH
5.0
50
50
A
I
CEX
Output High leakage current
V
CC
= 5.5V; V
O
= 5.5V; V
I
= GND or V
CC
5.0
50
50
A
I
O
Output current
1
V
CC
= 5.5V; V
O
= 2.5V
50
100
180
50
180
mA
I
CCH
V
CC
= 5.5V; Outputs High, V
I
= GND or V
CC
50
250
250
A
I
CCL
Quiescent supply current
V
CC
= 5.5V; Outputs Low, V
I
= GND or V
CC
24
30
30
mA
I
CCZ
V
CC
= 5.5V; Outputs 3-State;
V
I
= GND or V
CC
50
250
250
A
I
CC
Additional supply current per
input pin
2
V
CC
= 5.5V; one input at 3.4V,
other inputs at V
CC
or GND
0.05
1.5
1.5
mA
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. This parameter is valid for any V
CC
between 0V and 2.1V, with a transition time of up to 10msec. From V
CC
= 2.1V to V
CC
= 5V
10% a
transition time of up to 100
sec is permitted.
Philips Semiconductors
Product specification
74ABT640
Octal transceiver with direction pin, inverting
(3-State)
1998 Jan 16
5
AC CHARACTERISTICS
GND = 0V; t
R
= t
F
= 2.5ns; C
L
= 50pF, R
L
= 500
LIMITS
SYMBOL
PARAMETER
WAVEFORM
T
amb
= +25
C
V
CC
= +5.0V
T
amb
= 40
C to +85
C
V
CC
= +5.0V
0.5V
UNIT
Min
Typ
Max
Min
Max
t
PLH
t
PHL
Propagation delay
An to Bn or Bn to An
1
1.0
1.5
2.8
3.1
4.2
4.3
1.0
1.5
4.9
4.9
ns
t
PZH
t
PZL
Output enable time
to High and Low level
2
1.5
1.3
3.6
3.2
4.9
5.9
1.5
1.3
5.8
7.3
ns
t
PHZ
t
PLZ
Output disable time
from High and Low Level
2
2.5
2.0
5.2
4.1
6.5
5.3
2.5
2.0
6.8
5.5
ns
AC WAVEFORMS
V
M
= 1.5V, V
IN
= GND to 3.0V
An or Bn
INPUT
V
M
V
M
Bn or An
OUTPUT
V
M
V
M
t
PHL
t
PLH
SA00192
Waveform 1. Waveforms Showing the Input to Output
Propagation Delays
OE
INPUT
V
M
V
M
t
PZH
t
PHZ
V
OH
V
M
V
M
V
OL
t
PZL
t
PLZ
3.5V
0V
V
OL
+ 0.3V
V
OH
0.3V
An or Bn
OUTPUT
An or Bn
OUTPUT
SA00207
Waveform 2. Waveforms Showing the 3-State Output Enable
and Disable Times
TEST CIRCUIT AND WAVEFORMS
C
L
= 50 pF
500
Load Circuit
DEFINITIONS
C
L
=
Load capacitance includes jig and probe capacitance;
see AC CHARACTERISTICS for value.
TEST
S1
t
pd
open
t
PLZ
/t
PZL
7 V
t
PHZ
/t
PZH
open
SA00012
500
From Output
Under Test
S1
7 V
Open
GND