2003 Nov 06
2
Philips Semiconductors
Product specification
Inverter
74AHC3G04; 74AHCT3G04
FEATURES
Symmetrical output impedance
High noise immunity
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V.
Low power dissipation
Balanced propagation delays
SOT505-2 and SOT765-1 package
Specified from
-
40 to +85
C and
-
40 to +125
C.
DESCRIPTION
The 74AHC3G04/74AHCT3G04 are high-speed Si-gate
CMOS devices.
The 74AHC3G04/74AHCT3G04 provides three inverting
buffer.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
C; t
r
= t
f
3.0 ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
N +
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total load switching outputs;
(C
L
V
CC
2
f
o
) = sum of outputs.
2. The condition is V
I
= GND to V
CC
.
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
74AHC3G04
74AHCT3G04
t
PHL
/t
PLH
propagation delay input A to output Y C
L
= 15 pF; V
CC
= 5 V
3.1
3.4
ns
C
I
input capacitance
1.5
1.5
pF
C
PD
power dissipation capacitance
C
L
= 50 pF; f = 1 MHz;
notes 1 and 2
9
10
pF
INPUT
OUTPUT
nA
nY
L
H
H
L
2003 Nov 06
4
Philips Semiconductors
Product specification
Inverter
74AHC3G04; 74AHCT3G04
handbook, halfpage
7
1
1
1
5
3
MNA721
1
2
6
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
handbook, halfpage
MNA110
A
Y
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
SYMBOL
PARAMETER
CONDITIONS
74AHC3G04
74AHCT3G04
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
supply voltage
2.0
5.0
5.5
4.5
5.0
5.5
V
V
I
input voltage
0
-
5.5
0
-
5.5
V
V
O
output voltage
0
-
V
CC
0
-
V
CC
V
T
amb
operating ambient
temperature
see DC and AC
characteristics per device
-
40
+25
+125
-
40
+25
+125
C
t
r
, t
f
(
t/
f)
input rise and fall times
V
CC
= 3.3
0.3 V
-
-
100
-
-
-
ns/V
V
CC
= 5
0.5 V
-
-
20
-
-
20
ns/V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX. UNIT
V
CC
supply voltage
-
0.5
+7.0
V
V
I
input voltage
-
0.5
+7.0
V
I
IK
input diode current
V
I
<
-
0.5 V
-
-
20
mA
I
OK
output diode current
-
0.5 V < V
O
< V
CC
+ 0.5 V; note 1
-
20
mA
I
O
output source or sink current
-
0.5 V < V
O
< V
CC
+ 0.5 V
-
25
mA
I
CC
, I
GND
V
CC
or GND current
-
75
mA
T
stg
storage temperature
-
65
+150
C
P
D
power dissipation
T
amb
=
-
40 to +125
C
-
250
mW
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