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Электронный компонент: 74AHC541DB

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DATA SHEET
Product specification
Supersedes data of 1998 Sep 21
File under Integrated Circuits, IC06
1999 Nov 24
INTEGRATED CIRCUITS
74AHC541; 74AHCT541
Octal buffer/line driver; 3-state
1999 Nov 24
2
Philips Semiconductors
Product specification
Octal buffer/line driver; 3-state
74AHC541; 74AHCT541
FEATURES
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
CDM EIA/JESD22-C101 exceeds 1000 V
Balanced propagation delays
All inputs have a Schmitt-trigger action
Inputs accepts voltages higher than V
CC
For AHC only: operates with CMOS input levels
For AHCT only: operates with TTL input levels
Specified from
-
40 to +85
C and
-
40 to +125
C.
DESCRIPTION
The 74AHC/AHCT541 is a high-speed Si-gate CMOS
device.
The 74AHC/AHCT541 are octal non-inverting buffer/line
drivers with 3-state bus compatible outputs.
The 3-state outputs are controlled by the output enable
inputs OE
0
and OE
1
.
A HIGH on OE
n
causes the outputs to assume a
high-impedance OFF-state.
QUICK REFERENCE DATA
Ground = 0 V; T
amb
= 25
C; t
r
= t
f
3.0 ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
+
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
(C
L
V
CC
2
f
o
) = sum of outputs;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
AHC
AHCT
t
PHL
/t
PLH
propagation delay A
n
to Y
n
C
L
= 15 pF; V
CC
= 5 V
3.5
3.5
ns
C
I
input capacitance
V
I
= V
CC
or GND
3
3
pF
C
O
output capacitance
4.0
4.0
pF
C
PD
power dissipation capacitance
C
L
= 50 pF; f = 1 MHz;
notes 1 and 2
10
12
pF
1999 Nov 24
3
Philips Semiconductors
Product specification
Octal buffer/line driver; 3-state
74AHC541; 74AHCT541
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level;
X = don't care;
Z = high-impedance OFF-state.
ORDERING INFORMATION
PINNING
INPUT
OUTPUT
OE
0
OE
1
A
n
Y
n
L
L
L
L
L
L
H
H
X
H
X
Z
H
X
X
Z
OUTSIDE NORTH
AMERICA
NORTH AMERICA
PACKAGES
PINS
PACKAGE
MATERIAL
CODE
74AHC541D
74AHC541D
20
SO
plastic
SOT163-1
74AHC541PW
74AHC541PW DH
20
TSSOP
plastic
SOT360-1
74AHCT541D
74AHCT541D
20
SO
plastic
SOT163-1
74AHCT541PW
7AHCT541PW DH
20
TSSOP
plastic
SOT360-1
PIN
SYMBOL
DESCRIPTION
1
OE
0
output enable input
2, 3, 4, 5, 6, 7, 8 and 9
A
0
to A
7
data inputs
10
GND
ground (0 V)
11, 12, 13, 14, 15, 16, 17 and 18
Y
7
to Y
0
data inputs/outputs
19
OE
1
output enable input
20
V
CC
DC supply voltage
1999 Nov 24
4
Philips Semiconductors
Product specification
Octal buffer/line driver; 3-state
74AHC541; 74AHCT541
Fig.1 Pin configuration.
handbook, halfpage
OE0
A0
A1
A2
A3
A4
A5
A6
A7
GND
VCC
OE1
Y0
Y1
Y3
Y4
Y2
Y5
Y6
Y7
1
2
3
4
5
6
7
8
9
10
11
12
20
19
18
17
16
15
14
13
541
MNA178
Fig.2 Logic symbol.
handbook, halfpage
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
1
19
A0
A1
A2
A3
A4
A5
A6
A7
Y0
Y1
Y2
Y3
Y4
Y5
Y6
Y7
OE0
OE1
MNA179
Fig.3 IEEE/IEC logic symbol.
handbook, halfpage
MNA180
9
11
12
13
14
15
16
2
3
4
5
6
7
8
18
17
19
1
&
EN
1999 Nov 24
5
Philips Semiconductors
Product specification
Octal buffer/line driver; 3-state
74AHC541; 74AHCT541
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO-package: above 70
C the value of P
D
derates linearly with 8 mW/K.
For TSSOP-package: above 60
C the value of P
D
derates linearly with 5.5 mW/K.
SYMBOL
PARAMETER
CONDITIONS
74AHC
74AHCT
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
DC supply voltage
2.0
5.0
5.5
4.5
5.0
5.5
V
V
I
input voltage
0
-
5.5
0
-
5.5
V
V
O
output voltage
0
-
V
CC
0
-
V
CC
V
T
amb
operating ambient temperature
see DC and AC
characteristics per
device
-
40
+25
+85
-
40
+25
+85
C
-
40
+25
+125
-
40
+25
+125
C
t
r
,t
f
(
t/
f) input rise and fall times
V
CC
= 3.3
0.3 V
-
-
100
-
-
-
ns/V
V
CC
= 5
0.5 V
-
-
20
-
-
20
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX. UNIT
V
CC
DC supply voltage
-
0.5
+7.0
V
V
I
input voltage
-
0.5
+7.0
V
I
IK
DC input diode current
V
I
< -
0.5 V; note 1
-
-
20
mA
I
OK
DC output diode current
V
O
< -
0.5 V or V
O
>
V
CC
+ 0.5 V; note 1
-
20
mA
I
O
DC output source or sink current
-
0.5 V
<
V
O
<
V
CC
+ 0.5 V
-
25
mA
I
CC
DC V
CC
or GND current
-
75
mA
T
stg
storage temperature
-
65
+150
C
P
D
power dissipation per package
for temperature range:
-
40 to +125
C; note 2
-
500
mW