DATA SHEET
Product specification
File under Integrated Circuits, IC06
2000 May 01
INTEGRATED CIRCUITS
74AHC1G06; 74AHCT1G06
Inverter with open-drain output
2000 May 01
2
Philips Semiconductors
Product specification
Inverter with open-drain output
74AHC1G06;
74AHCT1G06
FEATURES
High noise immunity
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
Low power dissipation
SOT353 package
Output capability standard (open drain).
DESCRIPTION
The 74AHC1G/AHCT1G06 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G06 provides the inverting buffer.
The output of the 74AHC1G/AHCT1G06 devices is an
open drain and can be connected to other open-drain
outputs to implement active-LOW, wired-OR or
active-HIGH wired-AND functions. For digital operation
this device must have a pull-up resistor to establish a logic
HIGH-level.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
C; t
r
= t
f
3.0 ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
+ (C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level;
Z = high impedance OFF-state.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
AHC1G
AHCT1G
t
PZL
propagation delay inA to outY
C
L
= 15 pF; V
CC
= 5 V
2.7
3.0
ns
t
PLZ
propagation delay inA to outY
C
L
= 15 pF; V
CC
= 5 V
3.0
3.2
ns
C
I
input capacitance
1.5
1.5
pF
C
PD
power dissipation capacitance
C
L
= 50 pF; f = 1 MHz;
notes 1 and 2
3
4.5
pF
INPUT
OUTPUT
inA
outY
L
Z
H
L
2000 May 01
4
Philips Semiconductors
Product specification
Inverter with open-drain output
74AHC1G06;
74AHCT1G06
handbook, halfpage
MNA585
4
2
outY
inA
Fig.3 IEC logic symbol.
handbook, halfpage
MNA586
outY
inA
GND
Fig.4 Logic diagram.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
CONDITIONS
74AHC
74AHCT
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
DC supply voltage
2.0
5.0
5.5
4.5
5.0
5.5
V
V
I
input voltage
0
-
5.5
0
-
5.5
V
V
O
output voltage
active mode
0
-
V
CC
0
-
V
CC
V
high-impedance mode
0
-
6.0
0
-
6.0
V
T
amb
operating ambient
temperature
see DC and AC
characteristics per device
-
40
+25
+85
-
40
+25
+85
C
-
40
+25
+125
-
40
+25
+125
C
t
r
, t
f
(
t/
f)
input rise and fall
time ratios (except
for Schmitt-trigger
inputs)
V
CC
= 3.3
0.3 V
-
-
100
-
-
-
ns/V
V
CC
= 5
0.5 V
-
-
20
-
-
20
ns/V
2000 May 01
5
Philips Semiconductors
Product specification
Inverter with open-drain output
74AHC1G06;
74AHCT1G06
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55
C the value of P
D
derates linearly with 2.5 mW/K.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
DC supply voltage
-
0.5
+7.0
V
V
I
input voltage
-
0.5
+7.0
V
I
IK
DC input diode current
V
I
<
-
0.5 V; note 1
-
-
20
mA
I
OK
DC output clamping diode
current
V
O
<
-
0.5 V; note 1
-
20
mA
V
O
output voltage
active mode; note 1
-
0.5
V
CC
+ 0.5
V
high-impedance mode; note 1
-
0.5
7.0
V
I
O
DC output sink current
V
O
>
-
0.5 V
-
25
mA
I
CC
DC V
CC
or GND current
-
75
mA
T
stg
storage temperature
-
65
+150
C
P
D
power dissipation per
package
for temperature range:
-
40 to +125
C;
note 2
-
200
mW
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