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Электронный компонент: 74AUP1GU04GM

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1.
General description
The 74AUP1GU04 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible families.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 0.8 V to 3.6 V.
The 74AUP1GU04 provides the single unbuffered inverting gate.
2.
Features
s
Wide supply voltage range from 0.8 V to 3.6 V
s
High noise immunity
s
ESD protection:
x
HBM JESD22-A114-C exceeds 2000 V
x
MM JESD22-A115-A exceeds 200 V
x
CDM JESD22-C101-C exceeds 1000 V
s
Low static power consumption; I
CC
= 0.9
A (maximum)
s
Latch-up performance exceeds 100 mA per JESD 78 Class II
s
Inputs accept voltages up to 3.6 V
s
Multiple package options
s
Specified from
-
40
C to +85
C and
-
40
C to +125
C
74AUP1GU04
Low-power unbuffered inverter
Rev. 01 -- 10 August 2005
Product data sheet
9397 750 14689
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 10 August 2005
2 of 18
Philips Semiconductors
74AUP1GU04
Low-power unbuffered inverter
3.
Quick reference data
[1]
C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
N +
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of the outputs.
[2]
The condition is V
I
= GND to V
CC
.
4.
Ordering information
5.
Marking
Table 1:
Quick reference data
GND = 0 V; T
amb
= 25
C; t
r
= t
f
3 ns.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
t
PHL
, t
PLH
propagation delay
A to Y
C
L
= 5 pF; R
L
= 1 M
;
V
CC
= 0.8 V
-
6.2
-
ns
C
L
= 5 pF; R
L
= 1 M
;
V
CC
= 1.1 V to 1.3 V
0.9
2.3
4.4
ns
C
L
= 5 pF; R
L
= 1 M
;
V
CC
= 1.4 V to 1.6 V
0.7
1.7
3.1
ns
C
L
= 5 pF; R
L
= 1 M
;
V
CC
= 1.65 V to 1.95 V
0.5
1.4
2.6
ns
C
L
= 5 pF; R
L
= 1 M
;
V
CC
= 2.3 V to 2.7 V
0.4
1.1
2.0
ns
C
L
= 5 pF; R
L
= 1 M
;
V
CC
= 3.0 V to 3.6 V
0.3
1.0
1.8
ns
C
i
input capacitance
-
1.5
-
pF
C
PD
power dissipation
capacitance
V
CC
= 1.8 V; f = 10 MHz
[1] [2]
-
1.8
-
pF
V
CC
= 3.3 V; f = 10 MHz
[1] [2]
-
5.3
-
pF
Table 2:
Ordering information
Type number
Package
Temperature range
Name
Description
Version
74AUP1GU04GW
-
40
C to +125
C
TSSOP5
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
SOT353-1
74AUP1GU04GM
-
40
C to +125
C
XSON6
plastic extremely thin small outline package; no leads;
6 terminals; body 1
1.45
0.5 mm
SOT886
Table 3:
Marking
Type number
Marking code
74AUP1GU04GW
pD
74AUP1GU04GM
pD
9397 750 14689
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 10 August 2005
3 of 18
Philips Semiconductors
74AUP1GU04
Low-power unbuffered inverter
6.
Functional diagram
7.
Pinning information
7.1 Pinning
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram
mna108
A
Y
2
4
mna109
4
1
2
001aad073
540
50
A
Y
V
CC
Fig 4.
Pin configuration SOT353-1
(TSSOP5)
Fig 5.
Pin configuration SOT886 (XSON6)
U04
n.c.
V
CC
A
GND
Y
001aab666
1
2
3
5
4
U04
A
001aab667
n.c.
GND
n.c.
V
CC
Y
Transparent top view
2
3
1
5
4
6
9397 750 14689
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 10 August 2005
4 of 18
Philips Semiconductors
74AUP1GU04
Low-power unbuffered inverter
7.2 Pin description
8.
Functional description
8.1 Function table
[1]
H = HIGH voltage level;
L = LOW voltage level.
Table 4:
Pin description
Symbol
Pin
Description
TSSOP5
XSON6
n.c.
1
1
not connected
A
2
2
data input A
GND
3
3
ground (0 V)
Y
4
4
data output Y
n.c.
-
5
not connected
V
CC
5
6
supply voltage
Table 5:
Function table
[1]
Input
Output
A
Y
L
H
H
L
9397 750 14689
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 10 August 2005
5 of 18
Philips Semiconductors
74AUP1GU04
Low-power unbuffered inverter
9.
Limiting values
[1]
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
For TSSOP5 packages: above 87.5
C the value of P
tot
derates linearly with 4.0 mW/K.
For XSON6 packages: above 45
C the value of P
tot
derates linearly with 2.4 mW/K.
10. Recommended operating conditions
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to
GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
V
CC
supply voltage
-
0.5
+4.6
V
I
IK
input clamping
current
V
I
< 0 V
-
-
50
mA
V
I
input voltage
[1]
-
0.5
+4.6
V
I
OK
output clamping
current
V
O
> V
CC
or V
O
< 0 V
-
50
mA
V
O
output voltage
[1]
-
0.5
V
CC
+ 0.5 V
I
O
output current
V
O
= 0 V to V
CC
-
20
mA
I
CC
quiescent supply
current
-
+
50
mA
I
GND
ground current
-
-
50
mA
T
stg
storage temperature
-
65
+150
C
P
tot
total power
dissipation
T
amb
=
-
40
C to +125
C
[2]
-
250
mW
Table 7:
Recommended operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
V
CC
supply voltage
0.8
3.6
V
V
I
input voltage
0
3.6
V
V
O
output voltage
0
V
CC
V
T
amb
ambient temperature
-
40
+125
C
t
r
, t
f
input rise and fall times
V
CC
= 0.8 V to 3.6 V
0
200
ns/V
9397 750 14689
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 10 August 2005
6 of 18
Philips Semiconductors
74AUP1GU04
Low-power unbuffered inverter
11. Static characteristics
Table 8:
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
T
amb
= 25
C
V
IH
HIGH-state input voltage
V
CC
= 0.8 V to 3.6 V
0.75
V
CC
-
-
V
V
IL
LOW-state input voltage
V
CC
= 0.8 V to 3.6 V
-
-
0.25
V
CC
V
V
OH
HIGH-state output voltage
V
I
= V
IH
or V
IL
I
O
=
-
20
A; V
CC
= 0.8 V to 3.6 V
V
CC
-
0.1
-
-
V
I
O
=
-
1.1 mA; V
CC
= 1.1 V
0.75
V
CC
-
-
V
I
O
=
-
1.7 mA; V
CC
= 1.4 V
1.11
-
-
V
I
O
=
-
1.9 mA; V
CC
= 1.65 V
1.32
-
-
V
I
O
=
-
2.3 mA; V
CC
= 2.3 V
2.05
-
-
V
I
O
=
-
3.1 mA; V
CC
= 2.3 V
1.9
-
-
V
I
O
=
-
2.7 mA; V
CC
= 3.0 V
2.72
-
-
V
I
O
=
-
4.0 mA; V
CC
= 3.0 V
2.6
-
-
V
V
OL
LOW-state output voltage
V
I
= V
IH
or V
IL
I
O
= 20
A; V
CC
= 0.8 V to 3.6 V
-
-
0.1
V
I
O
= 1.1 mA; V
CC
= 1.1 V
-
-
0.3
V
CC
V
I
O
= 1.7 mA; V
CC
= 1.4 V
-
-
0.31
V
I
O
= 1.9 mA; V
CC
= 1.65 V
-
-
0.31
V
I
O
= 2.3 mA; V
CC
= 2.3 V
-
-
0.31
V
I
O
= 3.1 mA; V
CC
= 2.3 V
-
-
0.44
V
I
O
= 2.7 mA; V
CC
= 3.0 V
-
-
0.31
V
I
O
= 4.0 mA; V
CC
= 3.0 V
-
-
0.44
V
I
LI
input leakage current
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
-
-
0.1
A
I
CC
quiescent supply current
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
-
-
0.5
A
C
i
input capacitance
V
CC
= 0 V to 3.6 V; V
I
= GND or V
CC
-
1.5
-
pF
C
o
output capacitance
V
O
= GND; V
CC
= 0 V
-
1.8
-
pF
T
amb
=
-
40
C to +85
C
V
IH
HIGH-state input voltage
V
CC
= 0.8 V to 3.6 V
0.75
V
CC
-
-
V
V
IL
LOW-state input voltage
V
CC
= 0.8 V to 3.6 V
-
-
0.25
V
CC
V
V
OH
HIGH-state output voltage
V
I
= V
IH
or V
IL
I
O
=
-
20
A; V
CC
= 0.8 V to 3.6 V
V
CC
-
0.1
-
-
V
I
O
=
-
1.1 mA; V
CC
= 1.1 V
0.7
V
CC
-
-
V
I
O
=
-
1.7 mA; V
CC
= 1.4 V
1.03
-
-
V
I
O
=
-
1.9 mA; V
CC
= 1.65 V
1.30
-
-
V
I
O
=
-
2.3 mA; V
CC
= 2.3 V
1.97
-
-
V
I
O
=
-
3.1 mA; V
CC
= 2.3 V
1.85
-
-
V
I
O
=
-
2.7 mA; V
CC
= 3.0 V
2.67
-
-
V
I
O
=
-
4.0 mA; V
CC
= 3.0 V
2.55
-
-
V
9397 750 14689
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 10 August 2005
7 of 18
Philips Semiconductors
74AUP1GU04
Low-power unbuffered inverter
V
OL
LOW-state output voltage
V
I
= V
IH
or V
IL
I
O
= 20
A; V
CC
= 0.8 V to 3.6 V
-
-
0.1
V
I
O
= 1.1 mA; V
CC
= 1.1 V
-
-
0.3
V
CC
V
I
O
= 1.7 mA; V
CC
= 1.4 V
-
-
0.37
V
I
O
= 1.9 mA; V
CC
= 1.65 V
-
-
0.35
V
I
O
= 2.3 mA; V
CC
= 2.3 V
-
-
0.33
V
I
O
= 3.1 mA; V
CC
= 2.3 V
-
-
0.45
V
I
O
= 2.7 mA; V
CC
= 3.0 V
-
-
0.33
V
I
O
= 4.0 mA; V
CC
= 3.0 V
-
-
0.45
V
I
LI
input leakage current
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
-
-
0.5
A
I
CC
quiescent supply current
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
-
-
0.9
A
T
amb
=
-
40
C to +125
C
V
IH
HIGH-state input voltage
V
CC
= 0.8 V to 3.6 V
0.75
V
CC
-
-
V
V
IL
LOW-state input voltage
V
CC
= 0.8 V to 3.6 V
-
-
0.25
V
CC
V
V
OH
HIGH-state output voltage
V
I
= V
IH
or V
IL
I
O
=
-
20
A; V
CC
= 0.8 V to 3.6 V
V
CC
-
0.11 -
-
V
I
O
=
-
1.1 mA; V
CC
= 1.1 V
0.6
V
CC
-
-
V
I
O
=
-
1.7 mA; V
CC
= 1.4 V
0.93
-
-
V
I
O
=
-
1.9 mA; V
CC
= 1.65 V
1.17
-
-
V
I
O
=
-
2.3 mA; V
CC
= 2.3 V
1.77
-
-
V
I
O
=
-
3.1 mA; V
CC
= 2.3 V
1.67
-
-
V
I
O
=
-
2.7 mA; V
CC
= 3.0 V
2.40
-
-
V
I
O
=
-
4.0 mA; V
CC
= 3.0 V
2.30
-
-
V
V
OL
LOW-state output voltage
V
I
= V
IH
or V
IL
I
O
= 20
A; V
CC
= 0.8 V to 3.6 V
-
-
0.11
V
I
O
= 1.1 mA; V
CC
= 1.1 V
-
-
0.33
V
CC
V
I
O
= 1.7 mA; V
CC
= 1.4 V
-
-
0.41
V
I
O
= 1.9 mA; V
CC
= 1.65 V
-
-
0.39
V
I
O
= 2.3 mA; V
CC
= 2.3 V
-
-
0.36
V
I
O
= 3.1 mA; V
CC
= 2.3 V
-
-
0.50
V
I
O
= 2.7 mA; V
CC
= 3.0 V
-
-
0.36
V
I
O
= 4.0 mA; V
CC
= 3.0 V
-
-
0.50
V
I
LI
input leakage current
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
-
-
0.75
A
I
CC
quiescent supply current
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
-
-
1.4
A
Table 8:
Static characteristics
...continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
9397 750 14689
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 10 August 2005
8 of 18
Philips Semiconductors
74AUP1GU04
Low-power unbuffered inverter
12. Dynamic characteristics
Table 9:
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see
Figure 7
Symbol
Parameter
Conditions
Min
Typ
[1]
Max
Unit
T
amb
= 25
C; C
L
= 5 pF
t
PHL
, t
PLH
propagation delay A to Y
see
Figure 6
V
CC
= 0.8 V
-
6.2
-
ns
V
CC
= 1.1 V to 1.3 V
0.9
2.3
4.4
ns
V
CC
= 1.4 V to 1.6 V
0.7
1.7
3.1
ns
V
CC
= 1.65 V to 1.95 V
0.5
1.4
2.6
ns
V
CC
= 2.3 V to 2.7 V
0.4
1.1
2.0
ns
V
CC
= 3.0 V to 3.6 V
0.3
1.0
1.8
ns
T
amb
= 25
C; C
L
= 10 pF
t
PHL
, t
PLH
propagation delay A to Y
see
Figure 6
V
CC
= 0.8 V
-
9.6
-
ns
V
CC
= 1.1 V to 1.3 V
1.2
3.1
6.1
ns
V
CC
= 1.4 V to 1.6 V
1.0
2.3
4.0
ns
V
CC
= 1.65 V to 1.95 V
0.8
1.9
3.3
ns
V
CC
= 2.3 V to 2.7 V
0.6
1.5
2.7
ns
V
CC
= 3.0 V to 3.6 V
0.5
1.3
2.4
ns
T
amb
= 25
C; C
L
= 15 pF
t
PHL
, t
PLH
propagation delay A to Y
see
Figure 6
V
CC
= 0.8 V
-
13.0
-
ns
V
CC
= 1.1 V to 1.3 V
1.6
3.8
7.9
ns
V
CC
= 1.4 V to 1.6 V
1.3
2.8
4.9
ns
V
CC
= 1.65 V to 1.95 V
1.0
2.3
4.0
ns
V
CC
= 2.3 V to 2.7 V
0.8
1.9
3.2
ns
V
CC
= 3.0 V to 3.6 V
0.7
1.6
2.9
ns
T
amb
= 25
C; C
L
= 30 pF
t
PHL
, t
PLH
propagation delay A to Y
see
Figure 6
V
CC
= 0.8 V
-
23.2
-
ns
V
CC
= 1.1 V to 1.3 V
2.4
6.0
13.1
ns
V
CC
= 1.4 V to 1.6 V
2.0
4.2
7.6
ns
V
CC
= 1.65 V to 1.95 V
1.7
3.6
6.1
ns
V
CC
= 2.3 V to 2.7 V
1.4
2.9
4.8
ns
V
CC
= 3.0 V to 3.6 V
1.2
2.5
4.3
ns
9397 750 14689
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 -- 10 August 2005
9 of 18
Philips Semiconductors
74AUP1GU04
Low-power unbuffered inverter
[1]
All typical values are measured at nominal V
CC
.
[2]
C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
N +
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of the outputs.
[3]
The condition is V
I
= GND to V
CC
.
T
amb
= 25
C
C
PD
power dissipation capacitance f = 10 MHz
[2] [3]
V
CC
= 0.8 V
-
1.7
-
pF
V
CC
= 1.1 V to 1.3 V
-
1.6
-
pF
V
CC
= 1.4 V to 1.6 V
-
1.6
-
pF
V
CC
= 1.65 V to 1.95 V
-
1.8
-
pF
V
CC
= 2.3 V to 2.7 V
-
3.3
-
pF
V
CC
= 3.0 V to 3.6 V
-
5.3
-
pF
Table 9:
Dynamic characteristics
...continued
Voltages are referenced to GND (ground = 0 V); for test circuit see
Figure 7
Symbol
Parameter
Conditions
Min
Typ
[1]
Max
Unit
Table 10:
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see
Figure 7
Symbol
Parameter
Conditions
-
40
C to +85
C
-
40
C to +125
C
Unit
Min
Max
Min
Max
C
L
= 5 pF
t
PHL
, t
PLH
propagation delay
A to Y
see
Figure 6
V
CC
= 1.1 V to 1.3 V
0.9
4.8
0.9
5.3
ns
V
CC
= 1.4 V to 1.6 V
0.6
3.4
0.6
3.8
ns
V
CC
= 1.65 V to 1.95 V
0.5
2.9
0.5
3.2
ns
V
CC
= 2.3 V to 2.7 V
0.4
2.3
0.4
2.6
ns
V
CC
= 3.0 V to 3.6 V
0.3
2.1
0.3
2.4
ns
C
L
= 10 pF
t
PHL
, t
PLH
propagation delay
A to Y
see
Figure 6
V
CC
= 1.1 V to 1.3 V
1.2
6.8
1.2
7.5
ns
V
CC
= 1.4 V to 1.6 V
0.9
4.6
0.9
5.1
ns
V
CC
= 1.65 V to 1.95 V
0.7
3.8
0.7
4.2
ns
V
CC
= 2.3 V to 2.7 V
0.6
3.1
0.6
3.5
ns
V
CC
= 3.0 V to 3.6 V
0.5
2.7
0.5
3.0
ns
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Product data sheet
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Philips Semiconductors
74AUP1GU04
Low-power unbuffered inverter
13. Waveforms
C
L
= 15 pF
t
PHL
, t
PLH
propagation delay
A to Y
see
Figure 6
V
CC
= 1.1 V to 1.3 V
1.4
8.8
1.4
9.7
ns
V
CC
= 1.4 V to 1.6 V
1.1
5.7
1.1
6.3
ns
V
CC
= 1.65 V to 1.95 V
0.9
4.7
0.9
5.2
ns
V
CC
= 2.3 V to 2.7 V
0.8
3.7
0.8
4.1
ns
V
CC
= 3.0 V to 3.6 V
0.7
3.3
0.7
3.7
ns
C
L
= 30 pF
t
PHL
, t
PLH
propagation delay
A to Y
see
Figure 6
V
CC
= 1.1 V to 1.3 V
2.2
14.8
2.2
16.3
ns
V
CC
= 1.4 V to 1.6 V
1.8
9.0
1.8
9.9
ns
V
CC
= 1.65 V to 1.95 V
1.5
7.2
1.5
8.0
ns
V
CC
= 2.3 V to 2.7 V
1.3
5.7
1.3
6.3
ns
V
CC
= 3.0 V to 3.6 V
1.1
5.1
1.1
5.7
ns
Table 10:
Dynamic characteristics
...continued
Voltages are referenced to GND (ground = 0 V); for test circuit see
Figure 7
Symbol
Parameter
Conditions
-
40
C to +85
C
-
40
C to +125
C
Unit
Min
Max
Min
Max
Measurement points are given in
Table 11
.
Logic levels: V
OL
and V
OH
are typical output voltage drop that occur with the output load.
Fig 6.
The data input (A) to output (Y) propagation delays
Table 11:
Measurement points
Supply voltage
Output
Input
V
CC
V
M
V
M
V
I
t
r
= t
f
0.8 V to 3.6 V
0.5
V
CC
0.5
V
CC
V
CC
3.0 ns
mna640
t
PHL
t
PLH
V
M
V
M
A input
Y output
GND
V
I
V
OH
V
OL
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Product data sheet
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Philips Semiconductors
74AUP1GU04
Low-power unbuffered inverter
[1]
For measuring enable and disable times R
L
= 5 k
, for measuring propagation delays, setup and hold times
and pulse width R
L
= 1 M
.
Test data is given in
Table 12
.
Definitions for test circuit:
R
L
= Load resistor
C
L
= Load capacitance including jig and probe capacitance
R
T
= Termination resistance should be equal to the output impedance Z
o
of the pulse generator
Fig 7.
Load circuitry for switching times
Table 12:
Test data
Supply voltage
Load
V
EXT
V
CC
C
L
R
L
[1]
t
PLH
, t
PHL
t
PZH
, t
PHZ
t
PZL
, t
PLZ
0.8 V to 3.6 V
5 pF, 10 pF,
15 pF and 30 pF
5 k
or 1 M
open
GND
2
V
CC
001aac521
PULSE
GENERATOR
DUT
R
T
V
I
V
O
V
EXT
V
CC
R
L
5 k
C
L
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Product data sheet
Rev. 01 -- 10 August 2005
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Philips Semiconductors
74AUP1GU04
Low-power unbuffered inverter
14. Additional characteristics
V
O
is constant.
Fig 8.
Test set-up for measuring forward transconductance
T
amb
= 25
C.
Fig 9.
Typical forward transconductance as a function of supply voltage
mna050
V
CC
Rbias = 560 k
input
0.47
F
100
F
output
A
GND
I
O
V
I
(f = 1 kHz)
g
fs
I
o
V
i
---------
=
V
CC
(V)
0
4
3
1
2
001aad074
10
20
30
g
fs
(mA/V)
0
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Product data sheet
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13 of 18
Philips Semiconductors
74AUP1GU04
Low-power unbuffered inverter
15. Application information
Some applications for the 74AUP1GU04 are:
Linear amplifier (see
Figure 10
)
Crystal oscillator (see
Figure 11
).
Remark: All values given are typical values unless otherwise specified.
Z
L
> 10 k
.
R1
3 k
.
R2
1 M
.
Open loop amplification: A
OL
= 20.
Voltage amplification:
.
V
o(p-p)
= V
CC
-
1.5 V centered at 0.5
V
CC
.
Unity gain bandwidth product is 5 MHz.
Fig 10. Linear amplifier application
C1 = 47 pF.
C2 = 22 pF.
R1 = 1 M
to 10 M
.
R2 optimum value depends on the frequency and required stability against changes in V
CC
or
average minimum I
CC
(I
CC
= 2 mA at V
CC
= 3.3 V and f = 10 MHz).
Fig 11. Crystal oscillator application
U04
R1
R2
V
CC
ZL
mna052
1
F
A
V
A
OL
1
R1
R2
-------
1
A
OL
+
(
)
+
-----------------------------------------
=
mna053
U04
out
R2
R1
C1
C2
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Product data sheet
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14 of 18
Philips Semiconductors
74AUP1GU04
Low-power unbuffered inverter
16. Package outline
Fig 12. Package outline SOT353-1 (TSSOP5)
UNIT
A1
A
max.
A2
A3
bp
L
HE
Lp
w
y
v
c
e
D
(1)
E
(1)
Z
(1)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
0.1
0
1.0
0.8
0.30
0.15
0.25
0.08
2.25
1.85
1.35
1.15
0.65
e1
1.3
2.25
2.0
0.60
0.15
7
0
0.1
0.1
0.3
0.425
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
0.46
0.21
SOT353-1
MO-203
SC-88A
00-09-01
03-02-19
w
M
bp
D
Z
e
e1
0.15
1
3
5
4
A
A2
A1
Lp
(A3)
detail X
L
HE
E
c
v
M
A
X
A
y
1.5
3 mm
0
scale
TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm
SOT353-1
1.1
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Product data sheet
Rev. 01 -- 10 August 2005
15 of 18
Philips Semiconductors
74AUP1GU04
Low-power unbuffered inverter
Fig 13. Package outline SOT886 (XSON6)
terminal 1
index area
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT886
MO-252
SOT886
04-07-15
04-07-22
DIMENSIONS (mm are the original dimensions)
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm
D
E
e
1
e
A
1
b
L
L
1
e
1
0
1
2 mm
scale
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
UNIT
mm
0.25
0.17
1.5
1.4
0.35
0.27
A
1
max
b
E
1.05
0.95
D
e
e
1
L
0.40
0.32
L
1
0.5
0.6
A
(1)
max
0.5
0.04
1
6
2
5
3
4
6
(2)
4
(2)
A
Philips Semiconductors
74AUP1GU04
Low-power unbuffered inverter
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Product data sheet
Rev. 01 -- 10 August 2005
16 of 18
17. Abbreviations
18. Revision history
Table 13:
Abbreviations
Acronym
Description
CMOS
Complementary Metal Oxide Semiconductor
TTL
Transistor Transistor Logic
HBM
Human Body Model
ESD
ElectroStatic Discharge
MM
Machine Model
CDM
Charged Device Model
Table 14:
Revision history
Document ID
Release date
Data sheet status
Change notice
Doc. number
Supersedes
74AUP1GU04_1
20050810
Product data sheet
-
9397 750 14689
-
Philips Semiconductors
74AUP1GU04
Low-power unbuffered inverter
9397 750 14689
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Product data sheet
Rev. 01 -- 10 August 2005
17 of 18
19. Data sheet status
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
20. Definitions
Short-form specification -- The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition -- Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information -- Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
21. Disclaimers
Life support -- These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes -- Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status `Production'),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
22. Trademarks
Notice -- All referenced brands, product names, service names and
trademarks are the property of their respective owners.
23. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level
Data sheet status
[1]
Product status
[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 10 August 2005
Document number: 9397 750 14689
Published in The Netherlands
Philips Semiconductors
74AUP1GU04
Low-power unbuffered inverter
24. Contents
1
General description . . . . . . . . . . . . . . . . . . . . . . 1
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
4
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
5
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
6
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
7
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
7.1
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7.2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
8
Functional description . . . . . . . . . . . . . . . . . . . 4
8.1
Function table . . . . . . . . . . . . . . . . . . . . . . . . . . 4
9
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5
10
Recommended operating conditions. . . . . . . . 5
11
Static characteristics. . . . . . . . . . . . . . . . . . . . . 6
12
Dynamic characteristics . . . . . . . . . . . . . . . . . . 8
13
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14
Additional characteristics . . . . . . . . . . . . . . . . 12
15
Application information. . . . . . . . . . . . . . . . . . 13
16
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14
17
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16
18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16
19
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 17
20
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
21
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
22
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
23
Contact information . . . . . . . . . . . . . . . . . . . . 17