2002 May 17
2
Philips Semiconductors
Product specification
2-input AND gate
74HC1G08; 74HCT1G08
FEATURES
Wide supply voltage range from 2.0 to 6.0 V
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
Very small 5 pins package
Output capability: standard.
DESCRIPTION
The 74HC1G/HCT1G08 is a high-speed Si-gate CMOS
device.
The 74HC1G/HCT1G08 provides the 2-input AND
function. The standard output currents are
1
/
2
compared to
the 74HC/HCT08.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
C; t
r
= t
f
6.0 ns.
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
+
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
(C
L
V
CC
2
f
o
) = sum of outputs.
2. For HC1G the condition is V
I
= GND to V
CC
.
For HCT1G the condition is V
I
= GND to V
CC
-
1.5 V.
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
HC1G
HCT1G
t
PHL
/t
PLH
propagation delay A and B to Y
C
L
= 15 pF; V
CC
= 5 V
7
11
ns
C
I
input capacitance
1.5
1.5
pF
C
PD
power dissipation capacitance
notes 1 and 2
19
21
pF
INPUTS
OUTPUT
A
B
Y
L
L
L
L
H
L
H
L
L
H
H
H
2002 May 17
4
Philips Semiconductors
Product specification
2-input AND gate
74HC1G08; 74HCT1G08
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55
C the value of P
D
derates linearly with 2.5 mW/K.
SYMBOL
PARAMETER
CONDITIONS
74HC1G04
74HCT1G04
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
supply voltage
2.0
5.0
6.0
4.5
5.0
5.5
V
V
I
input voltage
0
-
V
CC
0
-
V
CC
V
V
O
output voltage
0
-
V
CC
0
-
V
CC
V
T
amb
operating ambient
temperature
see DC and AC
characteristics per
device
-
40
+25
+125
-
40
+25
+125
C
t
r
, t
f
input rise and fall times
V
CC
= 2.0 V
-
-
1000
-
-
-
ns
V
CC
= 4.5 V
-
-
500
-
-
500
ns
V
CC
= 6.0 V
-
-
400
-
-
-
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.5
+7.0
V
I
IK
input diode current
V
I
<
-
0.5 V or V
I
> V
CC
+ 0.5 V; note 1
-
20
mA
I
OK
output diode current
V
O
<
-
0.5 V or V
O
> V
CC
+ 0.5 V; note 1
-
20
mA
I
O
output source or sink current
-
0.5 V < V
O
< V
CC
+ 0.5 V; note 1
-
12.5
mA
I
CC
V
CC
or GND current
note 1
-
25
mA
T
stg
storage temperature
-
65
+150
C
P
D
power dissipation per package
for temperature range from
-
40 to +125
C;
note 2
-
200
mW
2002 May 17
5
Philips Semiconductors
Product specification
2-input AND gate
74HC1G08; 74HCT1G08
DC CHARACTERISTICS
Family 74HC1G
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Note
1. All typical values are measured at T
amb
= 25
C.
SYMBOL
PARAMETER
TEST CONDITIONS
T
amb
(
C)
UNIT
OTHER
V
CC
(V)
-
40 to +85
-
40 to +125
MIN.
TYP.
(1)
MAX.
MIN.
MAX.
V
IH
HIGH-level input voltage
2.0
1.5
1.2
-
1.5
-
V
4.5
3.15
2.4
-
3.15
-
V
6.0
4.2
3.2
-
4.2
-
V
V
IL
LOW-level input voltage
2.0
-
0.8
0.5
-
0.5
V
4.5
-
2.1
1.35
-
1.35
V
6.0
-
2.8
1.8
-
1.8
V
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
=
-
20
A
2.0
1.9
2.0
-
1.9
-
V
V
I
= V
IH
or V
IL
;
I
O
=
-
20
A
4.5
4.4
4.5
-
4.4
-
V
V
I
= V
IH
or V
IL
;
I
O
=
-
20
A
6.0
5.9
6.0
-
5.9
-
V
V
I
= V
IH
or V
IL
;
I
O
=
-
2.0 mA
4.5
4.13
4.32
-
3.7
-
V
V
I
= V
IH
or V
IL
;
I
O
=
-
2.6 mA
6.0
5.63
5.81
-
5.2
-
V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
= 20
A
2.0
-
0
0.1
-
0.1
V
V
I
= V
IH
or V
IL
;
I
O
= 20
A
4.5
-
0
0.1
-
0.1
V
V
I
= V
IH
or V
IL
;
I
O
= 20
A
6.0
-
0
0.1
-
0.1
V
V
I
= V
IH
or V
IL
;
I
O
= 2.0 mA
4.5
-
0.15
0.33
-
0.4
V
V
I
= V
IH
or V
IL
;
I
O
= 2.6 mA
6.0
-
0.16
0.33
-
0.4
V
I
LI
input leakage current
V
I
= V
CC
or GND
6.0
-
-
1.0
-
1.0
A
I
CC
quiescent supply
current
V
I
= V
CC
or GND;
I
O
= 0
6.0
-
-
10
-
20
A
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