Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- LIMITING VALUES
- ELECTRICAL CHARACTERISTICS
- THERMAL CHARACTERISTICS
- GRAPHICAL DATA
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 Mar 21
DISCRETE SEMICONDUCTORS
BA315
Low-voltage stabistor
M3D176
1996 Mar 21
2
Philips Semiconductors
Product specification
Low-voltage stabistor
BA315
FEATURES
Low-voltage stabilization
Forward voltage range:
480 mV to 1050 mV
Total power dissipation:
max. 350 mW.
APPLICATIONS
Low-voltage stabilization e.g.
Bias stabilizer in class-B output
stages
Clipping
Clamping
Meter protection.
DESCRIPTION
Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass
package.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
Diodes are type branded.
handbook, halfpage
MAM246
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
-
5
V
I
F
continuous forward current
-
100
mA
P
tot
total power dissipation
T
amb
= 25
C
-
350
mW
T
stg
storage temperature
-
65
+200
C
T
j
junction temperature
-
200
C
1996 Mar 21
3
Philips Semiconductors
Product specification
Low-voltage stabistor
BA315
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
see Fig.2
I
F
= 0.1 mA
480
-
540
mV
I
F
= 1 mA
590
-
660
mV
I
F
= 5 mA
670
-
740
mV
I
F
= 10 mA
710
-
790
mV
I
F
= 100 mA
875
-
1050
mV
I
R
reverse current
V
R
= 5 V
-
-
1500
nA
r
dif
differential resistance
I
F
= 1 mA; f = 1 kHz
-
50
-
I
F
= 10 mA; f = 1 kHz
-
6
7
S
F
temperature coefficient
I
F
= 1 mA
-
-
2.1
-
mV/K
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz
-
-
3
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
8 mm from the body
300
K/W
R
th j-a
thermal resistance from junction to ambient
maximum lead length
600
K/W
1996 Mar 21
4
Philips Semiconductors
Product specification
Low-voltage stabistor
BA315
GRAPHICAL DATA
Fig.2
Forward current as a function of
forward voltage.
handbook, halfpage
1.2
VF (V)
0.2
10
2
MBG520
10
IF
(mA)
1
10
-
1
0.4
0.6
0.8
1.0
(2)
(1)
T
j
= 25
C.
(1) Minimum values.
(2) Maximum values.
1996 Mar 21
5
Philips Semiconductors
Product specification
Low-voltage stabistor
BA315
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Dimensions in mm.
Diodes are type branded.
Fig.3 SOD27 (DO-35).
andbook, full pagewidth
MLA428 - 1
25.4 min
4.25
max
1.85
max
25.4 min
0.56
max
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