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Электронный компонент: 74LV03PWDH

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Philips
Semiconductors
74LV03
Quad 2-input NAND gate
Product specification
Supersedes data of 1997 Mar 28
IC24 Data Handbook
1998 Apr 20
INTEGRATED CIRCUITS
Philips Semiconductors
Product specification
74LV03
Quad 2-input NAND gate
2
1998 Apr 20
8531963 19257
FEATURES
Wide operating voltage: 1.0 to 5.5V
Optimized for Low Voltage applications: 1.0 to 3.6V
Accepts TTL input levels between V
CC
= 2.7V and V
CC
= 3.6V
Typical V
OLP
(output ground bounce)
t
0.8V @ V
CC
= 3.3V,
T
amb
= 25
C
Typical V
OHV
(output V
OH
undershoot)
u
2V @ V
CC
= 3.3V,
T
amb
= 25
C
Level shifter capability
Output capability: standard (open drain)
I
CC
category: SSI
DESCRIPTION
The 74LV03 is a lowvoltage Sigate CMOS device and is pin and
function compatible with 74HC/HCT03.
The 74LV03 provides the 2input NAND function.
The 74LV03 has opendrain Ntransistor outputs, which are not
clamped by a diode connected to V
CC
. In the OFFstate, i.e. when
one input is LOW, the output may be pulled to any voltage between
GND and V
Omax
. This allows the device to be used as a
LOWtoHIGH or HIGHtoLOW level shifter. For digital operation
and ORtied output applications, these devices must have a pullup
resistor to establish a logic HIGH level.
QUICK REFERENCE DATA
GND = 0V; T
amb
= 25
C; t
r
=t
f
v
2.5 ns
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
t
PZL
/t
PLZ
Propagation delay
nA, nB to nY
C
L
= 15pF
V
CC
= 3.3V
8
ns
C
I
Input capacitance
3.5
pF
C
PD
Power dissipation capacitance per gate
Notes 1, 2
4
pF
NOTES:
1
C
PD
is used to determine the dynamic power dissipation (P
D
in
W)
P
D
= C
PD
V
CC
2
x f
i
)S
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz; C
L
= output load capacitance in pF;
f
o
= output frequency in MHz; V
CC
= supply voltage in V;
S
(C
L
V
CC
2
f
o
) = sum of the outputs.
2
The condition is V
I
= GND to V
CC
3
The given value of C
PD
is obtained with : C
L
= 0 pF and R
L
=
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE
OUTSIDE NORTH AMERICA
NORTH AMERICA
PKG. DWG. #
14-Pin Plastic DIL
40
C to +125
C
74LV03 N
74LV03 N
SOT27-1
14-Pin Plastic SO
40
C to +125
C
74LV03 D
74LV03 D
SOT108-1
14-Pin Plastic SSOP Type II
40
C to +125
C
74LV03 DB
74LV03 DB
SOT337-1
14-Pin Plastic TSSOP Type I
40
C to +125
C
74LV03 PW
74LV03PW DH
SOT402-1
PIN DESCRIPTION
PIN
NUMBER
SYMBOL
FUNCTION
1, 4, 9, 12
1A to 4A
Data inputs
2, 5, 10, 13
1B to 4B
Data inputs
3, 6, 8, 11
1Y to 4Y
Data outputs
7
GND
Ground (0V)
14
V
CC
Positive supply voltage
FUNCTION TABLE
INPUTS
OUTPUT
nA
nB
nY
L
L
Z
L
H
Z
H
L
Z
H
H
L
NOTES:
H = HIGH voltage level
L = LOW voltage level
Z = High impedance OFF-state
Philips Semiconductors
Product specification
74LV03
Quad 2-input NAND gate
1998 Apr 20
3
PIN CONFIGURATION
14
13
12
11
10
9
8
7
6
5
4
3
2
1
GND
V
CC
3B
3A
3Y
4Y
4B
4A
1A
1B
2Y
1Y
2A
2B
SV00354
LOGIC SYMBOL (IEEE/IEC)
1
2
3
4
5
6
8
9
10
11
12
13
&
&
&
&
SV00356
LOGIC SYMBOL
1
2
4
5
9
10
12
13
3
6
8
11
1Y
2Y
3Y
4Y
1A
1B
2A
2B
3A
3B
4A
4B
SV00355
LOGIC DIAGRAM
A
GND
Y
B
SV00357
Philips Semiconductors
Product specification
74LV03
Quad 2-input NAND gate
1998 Apr 20
4
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
CC
DC supply voltage
See Note1
1.0
3.3
5.5
V
V
I
Input voltage
0
V
CC
V
V
O
Output voltage
0
V
CC
V
T
amb
Operating ambient temperature range in free
air
See DC and AC
characteristics
40
40
+85
+125
C
t
r
, t
f
Input rise and fall times
V
CC
= 1.0V to 2.0V
V
CC
= 2.0V to 2.7V
V
CC
= 2.7V to 3.6V
V
CC
= 3.6V to 5.5V





500
200
100
50
ns/V
NOTES:
1
The LV is guaranteed to function down to V
CC
= 1.0V (input levels GND or V
CC
); DC characteristics are guaranteed from V
CC
= 1.2V to V
CC
= 5.5V.
ABSOLUTE MAXIMUM RATINGS
1, 2
In accordance with the Absolute Maximum Rating System (IEC 134)
Voltages are referenced to GND (ground = 0V)
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
V
CC
DC supply voltage
0.5 to +7.0
V
I
IK
DC input diode current
V
I
< 0.5 or V
I
> V
CC
+ 0.5V
20
mA
I
OK
DC output diode current
V
O
< 0.5 or V
O
> V
CC
+ 0.5V
50
mA
I
O
DC output source or sink current
standard outputs
0.5V < V
O
< V
CC
+ 0.5V
25
mA
I
GND
,
I
CC
DC V
CC
or GND current for types with
standard outputs
50
mA
T
stg
Storage temperature range
65 to +150
C
P
TOT
Power dissipation per package
plastic DIL
plastic mini-pack (SO)
plastic shrink mini-pack (SSOP and TSSOP)
for temperature range: 40 to +125
C
above +70
C derate linearly with 12mW/K
above +70
C derate linearly with 8 mW/K
above +60
C derate linearly with 5.5 mW/K
750
500
400
mW
NOTES:
1
Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Philips Semiconductors
Product specification
74LV03
Quad 2-input NAND gate
1998 Apr 20
5
DC CHARACTERISTICS
Over recommended operating conditions voltages are referenced to GND (ground = 0V)
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
-40
C to +85
C
-40
C to +125
C
UNIT
MIN
TYP
1
MAX
MIN
MAX
V
CC
= 1.2V
0.9
0.9
V
IH
HIGH level Input
V
CC
= 2.0V
1.4
1.4
V
V
IH
voltage
V
CC
= 2.7 to 3.6V
2.0
2.0
V
V
CC
= 4.5 to 5.5V
0.7*V
CC
0.7*V
CC
V
CC
= 1.2V
0.3
0.3
V
IL
LOW level Input
V
CC
= 2.0V
0.6
0.6
V
V
IL
voltage
V
CC
= 2.7 to 3.6V
0.8
0.8
V
V
CC
= 4.5 to 5.5
0.3*V
CC
0.3*V
CC
V
CC
= 1.2V; V
I
= V
IH
or V
IL;
I
O
= 100
A
1.2
HIGH level output
V
CC
= 2.0V; V
I
= V
IH
or V
IL;
I
O
= 100
A
1.8
2.0
1.8
V
OH
HIGH level output
voltage; all outputs
V
CC
= 2.7V; V
I
= V
IH
or V
IL;
I
O
= 100
A
2.5
2.7
2.5
V
voltage all out uts
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
I
O
= 100
A
2.8
3.0
2.8
V
CC
= 4.5V;V
I
= V
IH
or V
IL;
I
O
= 100
A
4.3
4.5
4.3
V
OH
HIGH level output
voltage;
V
CC
= 3.0V;V
I
= V
IH
or V
IL;
I
O
= 6mA
2.40
2.82
2.20
V
V
OH
g
STANDARD
outputs
V
CC
= 4.5V;V
I
= V
IH
or V
IL;
I
O
= 12mA
3.60
4.20
3.50
V
V
CC
= 1.2V; V
I
= V
IH
or V
IL;
I
O
= 100
A
0
LOW level output
V
CC
= 2.0V; V
I
= V
IH
or V
IL;
I
O
= 100
A
0
0.2
0.2
V
OL
LOW level output
voltage; all outputs
V
CC
= 2.7V; V
I
= V
IH
or V
IL;
I
O
= 100
A
0
0.2
0.2
V
voltage all out uts
V
CC
= 3.0V;V
I
= V
IH
or V
IL;
I
O
= 100
A
0
0.2
0.2
V
CC
= 4.5V;V
I
= V
IH
or V
IL;
I
O
= 100
A
0
0.2
0.2
V
OL
LOW level output
voltage;
V
CC
= 3.0V;V
I
= V
IH
or V
IL;
I
O
= 6mA
0.25
0.40
0.50
V
V
OL
g
STANDARD
outputs
V
CC
= 4.5V;V
I
= V
IH
or V
IL;
I
O
= 12mA
0.35
0.55
0.65
V
I
OZ
HIGH level output
leakage current
V
CC
= 2.0 to 3.6V; V
I
= V
IL;
V
O
= V
CC
or GND
5.0
10
A
I
OZ
HIGH level output
leakage current
V
CC
= 2.0 to 3.6V; V
I
= V
IL;
V
O
= 6.0V
2
10
20
A
I
I
Input leakage
current
V
CC
= 5.5V; V
I
= V
CC
or GND
1.0
1.0
A
I
CC
Quiescent supply
current; SSI
V
CC
= 5.5V; V
I
= V
CC
or GND; I
O
= 0
20.0
40
A
I
CC
Additional
quiescent supply
current per input
V
CC
= 2.7V to 3.6V; V
I
= V
CC
0.6V
500
850
A
NOTES:
1
All typical values are measured at T
amb
= 25
C.
2
The maximum operating output voltage (V
O(max)
) is 6.0V.