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Электронный компонент: 74LV126

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Philips
Semiconductors
74LV126
Quad buffer/line driver (3-State)
Product specification
Supersedes data of 1997 Feb 03
IC24 Data Handbook
1998 Apr 28
INTEGRATED CIRCUITS
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Philips Semiconductors
Product specification
74LV126
Quad buffer/line driver (3-State)
2
1998 Apr 28
8531902 19290
FEATURES
Wide operating voltage: 1.0 to 5.5 V
Optimized for low voltage applications: 1.0 to 3.6 V
Accepts TTL input levels between V
CC
= 2.7 V and V
CC
= 3.6 V
Typical V
OLP
(output ground bounce) < 0.8 V at V
CC
= 3.3 V,
T
amb
= 25
C
Typical V
OHV
(output V
OH
undershoot) > 2 V at V
CC
= 3.3 V,
T
amb
= 25
C
Output capability: bus driver
I
CC
category: MSI
DESCRIPTION
The 74LV126 is a low-voltage Si-gate CMOS device that is pin and
function compatible with 74HC/HCT126.
The 74LV126 consists of four non-inverting buffers/line drivers with
3-state outputs. The 3-state outputs (nY) are controlled by the output
enable input (nOE). A LOW at nOE causes the outputs to assume a
high impedance OFF-state.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
C; t
r
= t
f
2.5 ns
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
t
PHL
/t
PLH
Propagation delay
nA to nY
C
L
= 15 pF;
V
CC
= 3.3 V
9
ns
C
I
Input capacitance
3.5
pF
C
PD
Power dissipation capacitance per buffer
V
CC
= 3.3 V;
V
I
= GND to V
CC
1
23
pF
NOTE:
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W)
P
D
= C
PD
V
CC
2
f
i
)
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz; C
L
= output load capacitance in pF;
f
o
= output frequency in MHz; V
CC
= supply voltage in V;
(C
L
V
CC
2
f
o
) = sum of the outputs.
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE
OUTSIDE NORTH AMERICA
NORTH AMERICA
PKG. DWG. #
14-Pin Plastic DIL
40
C to +125
C
74LV126 N
74LV126 N
SOT27-1
14-Pin Plastic SO
40
C to +125
C
74LV126 D
74LV126 D
SOT108-1
14-Pin Plastic SSOP Type II
40
C to +125
C
74LV126 DB
74LV126 DB
SOT337-1
14-Pin Plastic TSSOP Type I
40
C to +125
C
74LV126 PW
74LV126PW DH
SOT402-1
PIN DESCRIPTION
PIN
NUMBER
SYMBOL
FUNCTION
1, 4, 10, 13
1OE 4OE
Output enable inputs (active HIGH)
2, 5, 9, 12
1A 4A
Data inputs
3, 6, 8, 11
1Y 4Y
Data outputs
7
GND
Ground (0 V)
14
V
CC
Positive supply voltage
FUNCTION TABLE
INPUTS
OUTPUTS
nOE
nA
nY
H
L
L
H
H
H
L
X
Z
NOTES:
H =
HIGH voltage level
L
=
LOW voltage level
X =
don't care
Z =
high impedance OFF-state
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Philips Semiconductors
Product specification
74LV126
Quad buffer/line driver (3-State)
1998 Apr 28
3
PIN CONFIGURATION
SV00483
1
2
3
4
5
6
7
1OE
1A
1Y
2OE
2A
2Y
GND
V
CC
4OE
4A
4Y
3OE
3A
3Y
14
13
12
11
10
9
8
LOGIC SYMBOL (IEEE/IEC)
SV00485
1
2
EN1
1
(a)
(b)
3
1
2
EN
3
4
5
6
4
5
EN
6
10
9
8
10
9
EN
8
13
12
11
13
12
EN
11
LOGIC SYMBOL
SV00484
1Y
2Y
3Y
4Y
1
2
3
1OE
1A
4
5
6
2OE
2A
10
9
8
3OE
3A
13
12
11
4OE
4A
LOGIC DIAGRAM (ONE GATE)
SV00486
nY
nA
nOE
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V
CC
DC supply voltage
See Note 1
1.0
3.3
5.5
V
V
I
Input voltage
0
V
CC
V
V
O
Output voltage
0
V
CC
V
T
amb
Operating ambient temperature range in free air
See DC and AC
characteristics
40
40
+85
+125
C
t
r
, t
f
Input rise and fall times
V
CC
= 1.0V to 2.0V
V
CC
= 2.0V to 2.7V
V
CC
= 2.7V to 3.6V
V
CC
= 3.6V to 5.5V






500
200
100
50
ns/V
NOTE:
1. The LV is guaranteed to function down to V
CC
= 1.0V (input levels GND or V
CC
); DC characteristics are guaranteed from V
CC
= 1.2V to V
CC
= 5.5V.
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Philips Semiconductors
Product specification
74LV126
Quad buffer/line driver (3-State)
1998 Apr 28
4
ABSOLUTE MAXIMUM RATINGS
1, 2
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
V
CC
DC supply voltage
0.5 to +7.0
V
"
I
IK
DC input diode current
V
I
< 0.5 or V
I
> V
CC
+ 0.5V
20
mA
"
I
OK
DC output diode current
V
O
< 0.5 or V
O
> V
CC
+ 0.5V
50
mA
"
I
O
DC output source or sink current
bus driver outputs
0.5V < V
O
< V
CC
+ 0.5V
35
mA
"
I
GND
,
"
I
CC
DC V
CC
or GND current for types with
bus driver outputs
70
mA
T
stg
Storage temperature range
65 to +150
C
P
TOT
Power dissipation per package
plastic DIL
plastic mini-pack (SO)
plastic shrink mini-pack (SSOP and TSSOP)
for temperature range: 40 to +125
C
above +70
C derate linearly with 12 mW/K
above +70
C derate linearly with 8 mW/K
above +60
C derate linearly with 5.5 mW/K
750
500
400
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions, voltages are referenced to GND (ground = 0 V)
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
-40
C to +85
C
-40
C to +125
C
UNIT
MIN
TYP
1
MAX
MIN
MAX
V
CC
= 1.2 V
0.9
0.9
V
HIGH level Input
V
CC
= 2.0 V
1.4
1.4
V
V
IH
voltage
V
CC
= 2.7 to 3.6 V
2.0
2.0
V
V
CC
= 4.5 to 5.5 V
0.7
<
V
CC
0.7
<
V
CC
V
CC
= 1.2 V
0.3
0.3
V
LOW level Input
V
CC
= 2.0 V
0.6
0.6
V
V
IL
voltage
V
CC
= 2.7 to 3.6 V
0.8
0.8
V
V
CC
= 4.5 to 5.5
0.3
<
V
CC
0.3
<
V
CC
V
CC
= 1.2 V; V
I
= V
IH
or V
IL;
I
O
= 100
A
1.2
HIGH l
l
t
t
V
CC
= 2.0 V; V
I
= V
IH
or V
IL;
I
O
= 100
A
1.8
2.0
1.8
V
OH
HIGH level output
voltage; all outputs
V
CC
= 2.7 V; V
I
= V
IH
or V
IL;
I
O
= 100
A
2.5
2.7
2.5
V
voltage all out uts
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
I
O
= 100
A
2.8
3.0
2.8
V
CC
= 4.5 V; V
I
= V
IH
or V
IL;
I
O
= 100
A
4.3
4.5
4.3
V
HIGH level output
voltage; BUS driver
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
I
O
= 8mA
2.40
2.82
2.20
V
V
OH
voltage; BUS driver
outputs
V
CC
= 4.5 V; V
I
= V
IH
or V
IL;
I
O
= 16mA
3.60
4.20
3.50
V
V
CC
= 1.2 V; V
I
= V
IH
or V
IL;
I
O
= 100
A
0
LOW l
l
t
t
V
CC
= 2.0 V; V
I
= V
IH
or V
IL;
I
O
= 100
A
0
0.2
0.2
V
OL
LOW level output
voltage; all outputs
V
CC
= 2.7 V; V
I
= V
IH
or V
IL;
I
O
= 100
A
0
0.2
0.2
V
voltage all out uts
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
I
O
= 100
A
0
0.2
0.2
V
CC
= 4.5 V; V
I
= V
IH
or V
IL;
I
O
= 100
A
0
0.2
0.2
background image
Philips Semiconductors
Product specification
74LV126
Quad buffer/line driver (3-State)
1998 Apr 28
5
DC ELECTRICAL CHARACTERISTICS (Continued)
Over recommended operating conditions, voltages are referenced to GND (ground = 0 V)
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
-40
C to +85
C
-40
C to +125
C
UNIT
MIN
TYP
1
MAX
MIN
MAX
V
O
LOW level output
voltage; BUS driver
V
CC
= 3.0 V; V
I
= V
IH
or V
IL;
I
O
= 8mA
0.20
0.40
0.50
V
V
OL
voltage; BUS driver
outputs
V
CC
= 4.5 V; V
I
= V
IH
or V
IL;
I
O
= 16mA
0.35
0.55
0.65
V
I
I
Input leakage
current
V
CC
= 5.5 V; V
I
= V
CC
or GND
1.0
1.0
A
I
OZ
3-State output
OFF-state current
V
CC
= 5.5 V; V
I
= V
IH
or V
IL;
V
O
= V
CC
or GND
5
10
A
I
CC
Quiescent supply
current; MSI
V
CC
= 5.5 V; V
I
= V
CC
or GND; I
O
= 0
20.0
160
A
I
CC
Additional
quiescent supply
current per input
V
CC
= 2.7 V to 3.6 V; V
I
= V
CC
0.6 V
500
850
A
NOTE:
1. All typical values are measured at T
amb
= 25
C.
AC CHARACTERISTICS
GND = 0V; t
r
= t
f
2.5ns; C
L
= 50pF; R
L
= 500
CONDITION
LIMITS
SYMBOL
PARAMETER
WAVEFORM
CONDITION
40 to +85
C
40 to +125
C
UNIT
V
CC
(V)
MIN
TYP
1
MAX
MIN
MAX
1.2
55
Propagation delay
2.0
19
24
31
t
PHL
/t
PLH
Propagation delay
nA to nY
Figures 1, 2
2.7
14
18
23
ns
nA to nY
3.0 to 3.6
10
2
14
18
4.5 to 5.5
12
15
1.2
75
3-state output
2.0
26
31
39
t
PZH
/t
PZL
3 state out ut
enable time
OE t
Y
Figures 1, 2
2.7
19
23
29
ns
nOE to nY
3.0 to 3.6
14
2
18
23
4.5 to 5.5
15
19
1.2
65
3-state output
2.0
24
32
39
t
PHZ
/t
PLZ
3 state out ut
disable time
OE t
Y
Figures 1, 2
2.7
28
24
29
ns
nOE to nY
3.0 to 3.6
14
2
20
24
4.5 to 5.5
17
21
NOTES:
1. Unless otherwise stated, all typical values are measured at T
amb
= 25
C
2. Typical values are measured at V
CC
= 3.3 V.