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Электронный компонент: 74LV688D

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Philips
Semiconductors
74LV688
8-bit magnitude comparator
Product specification
Supersedes data of 1997 May 15
IC24 Data Handbook
1998 Jun 23
INTEGRATED CIRCUITS
Philips Semiconductors
Product specification
74LV688
8-bit magnitude comparator
2
1998 Jun 23
853-1878 19618
FEATURES
Wide operating voltage: 1.0 to 5.5V
Optimized for low voltage applications: 1.0V to 3.6V
Accepts TTL input levels between V
CC
= 2.7V and V
CC
= 3.6V
Typical V
OLP
(output ground bounce) < 0.8V at V
CC
= 3.3V,
T
amb
= 25
C
Typical V
OHV
(output V
OH
undershoot) > 2V at V
CC
= 3.3V,
T
amb
= 25
C
Compare two 8-bit words
Output capability: standard
I
CC
category: MSI
DESCRIPTION
The 74LV688 is a high-speed Si-gate CMOS device, pin compatible
with the 74HC/HCT688
The 74LV688 is an 8-bit magnitude comparator. It performs
comparisons of two 8-bit binary or BCD words. The output provides
P = Q (equal-to).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
t
PHL
/t
PLH
Propagation delay P
n
, Q
n
to P=Q
C
L
= 15pF
V
CC
= 3.3V
17
ns
C
I
Input capacitance
3.5
pF
C
PD
Power dissipation capacitance per gate
V
I
= GND to V
CC
1
22
pF
NOTE:
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
m
W):
P
D
= C
PD
V
CC
2
f
i
+
S
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz; C
L
= output load capacity in pF;
f
o
= output frequency in MHz; V
CC
= supply voltage in V;
S
(C
L
V
CC
2
f
o
) = sum of outputs.
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE
OUTSIDE NORTH AMERICA
NORTH AMERICA
PKG. DWG. #
20-Pin Plastic DIL
40
C to +125
C
74LV688 N
74LV688 N
SOT146-1
20-Pin Plastic SO
40
C to +125
C
74LV688 D
74LV688 D
SOT163-1
20-Pin Plastic SSOP Type II
40
C to +125
C
74LV688 DB
74LV688 DB
SOT339-1
20-Pin Plastic TSSOP Type I
40
C to +125
C
74LV688 PW
74LV688PW DH
SOT360-1
PIN CONFIGURATION
14
13
12
11
10
9
8
7
6
5
4
3
2
1
GND
V
CC
15
16
17
18
19
20
E
P0
Q0
P1
Q1
P2
Q2
P3
Q3
P = Q
Q7
P7
Q6
P6
Q5
P5
Q4
P4
SY00054
PIN DESCRIPTION
PIN NO.
SYMBOL
FUNCTION
1
E
Enable input (active LOW)
2, 4, 6, 8, 11,
13, 15, 17
P0 to P7
Word inputs
3, 5, 7, 9, 12,
14, 16, 18
Q0 to Q7
Word inputs
10
GND
Ground (0V)
19
P=Q
Equal to output
20
V
CC
Positive Supply Voltage
Philips Semiconductors
Product specification
74LV688
8-bit magnitude comparator
1998 Jun 23
3
LOGIC SYMBOL
2
4
6
8
11
13
15
17
3
5
7
9
12
14
16
18
1
SY00055
19
P = Q
P0
P1
P2
P3
P4
P5
P6
P7
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
E
LOGIC SYMBOL (IEEE/IEC)
1
2
4
6
8
11
13
15
5
7
9
12
14
16
18
SY00056
19
G1
17
3
0
7
P
0
7
Q
(P = Q) 1
LOGIC DIAGRAM
P = Q
P7
Q7
P6
Q6
P5
Q5
P4
Q4
P3
Q3
P2
Q2
P1
Q1
P0
Q0
E
SY00057
FUNCTION TABLE
INPUTS
OUTPUT
DATA
Pn, Qn
ENABLE
E
P = Q
P = Q
L
L
X
H
H
P > Q
L
H
P < Q
L
H
NOTES:
H = HIGH voltage level
L = LOW voltage level
X = Don't care
Philips Semiconductors
Product specification
74LV688
8-bit magnitude comparator
1998 Jun 23
4
ABSOLUTE MAXIMUM RATINGS
1, 2
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0V).
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
CC
DC supply voltage
0.5
+7.0
V
I
IK
DC input diode current
V
I
< 0.5 V or V
1
> V
CC
+ 0.5V
20
mA
I
OK
DC output diode current
V
O
< 0.5 V or V
0
> V
CC
+ 0.5V
50
mA
I
O
DC output source or sink current
standard outputs
0.5V < V
O
< V
CC
+0.5V
25
mA
I
GND,
I
CC
DC V
CC
or GND current for types with
standard outputs
50
mA
T
stg
Storage temperature range
65
+150
C
P
tot
power dissipation per package
plastic DIL
plastic mini-pack (SO)
plastic medium-shrink SO (SSOP and TSSOP)
for temperature range: 40 to +125
C
above +70
C derate linearly with 12 mW/K
above +70
C derate linearly with 8 mW/K
above +60
C derate linearly with 5.5 mW/K


750
500
400
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to
absolutemaximumrated conditions for extended periods may affect device reliability.
2. The performance capability of a highperformance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CC
DC supply voltage
see note 1
1.0
3.3
5.5
V
V
I
DC Input voltage
0
V
CC
V
V
O
DC output voltage
0
V
CC
V
T
amb
Operating ambient temperature range in
freeair
See DC and AC characteristics
40
40

+85
+125
C
t
r
, t
f
(
t/
v)
Input rise and fall times
V
CC
= 1.0V to 2.0V
V
CC
= 2.0V to 2.7V
V
CC
= 2.7V to 3.6V
V
CC
= 3.6V to 5.5V



500
200
100
50
ns/V
NOTE:
1. The LV is guaranteed to function down to V
CC
= 1.0V (input levels GND or V
CC
); DC characteristics are guaranteed from V
CC
= 1.2V to V
CC
= 5.5V.
Philips Semiconductors
Product specification
74LV688
8-bit magnitude comparator
1998 Jun 23
5
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions. Voltages are referenced to GND (ground = 0V).
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
-40
C to +85
C
-40
C to +125
C
UNIT
MIN
TYP
1
MAX
MIN
MAX
V
CC
= 1.2V
0.9
0.9
V
IH
HIGH level Input
V
CC
= 2.0V
1.4
1.4
V
V
IH
voltage
V
CC
= 2.7 to 3.6V
2.0
2.0
V
V
CC
= 4.5 to 5.5V
0.7
<
V
CC
0.7
<
V
CC
V
CC
= 1.2V
0.3
0.3
V
IL
LOW level Input
V
CC
= 2.0V
0.6
0.6
V
V
IL
voltage
V
CC
= 2.7 to 3.6V
0.8
0.8
V
V
CC
= 4.5 to 5.5
0.3
<
V
CC
0.3
<
V
CC
V
CC
= 1.2V; V
I
= V
IH
or V
IL;
I
O
= 100
A
1.2
HIGH level output
V
CC
= 2.0V; V
I
= V
IH
or V
IL;
I
O
= 100
A
1.8
2.0
1.8
HIGH level output
voltage; all outputs
V
CC
= 2.7V; V
I
= V
IH
or V
IL;
I
O
= 100
A
2.5
2.7
2.5
V
voltage all out uts
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
I
O
= 100
A
2.8
3.0
2.8
V
V
OH
V
CC
= 4.5V; V
I
= V
IH
or V
IL;
I
O
= 100
A
4.3
4.5
4.3
V
HIGH level output
voltage;
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
I
O
= 6mA
2.40
2.82
2.20
g
STANDARD
outputs
V
CC
= 4.5V; V
I
= V
IH
or V
IL;
I
O
= 12mA
3.60
4.20
3.50
V
CC
= 1.2V; V
I
= V
IH
or V
IL;
I
O
= 100
A
0
LOW level output
V
CC
= 2.0V; V
I
= V
IH
or V
IL;
I
O
= 100
A
0
0.2
0.2
LOW level output
voltage; all outputs
V
CC
= 2.7V; V
I
= V
IH
or V
IL;
I
O
= 100
A
0
0.2
0.2
V
voltage all out uts
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
I
O
= 100
A
0
0.2
0.2
V
V
OL
V
CC
= 4.5V; V
I
= V
IH
or V
IL;
I
O
= 100
A
0
0.2
0.2
V
LOW level output
voltage;
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
I
O
= 6mA
0.25
0.40
0.50
g
STANDARD
outputs
V
CC
= 4.5V; V
I
= V
IH
or V
IL;
I
O
= 12mA
0.35
0.55
0.65
I
I
Input leakage
current
V
CC
= 5.5V; V
I
= V
CC
or GND
1.0
1.0
A
I
CC
Quiescent supply
current; MSI
V
CC
= 5.5V; V
I
= V
CC
or GND; I
O
= 0
20.0
160
A
I
CC
Additional
quiescent supply
current
V
CC
= 2.7V to 3.6V; V
I
= V
CC
0.6V
500
850
A
NOTE:
1. All typical values are measured at T
amb
= 25
C.