ChipFind - документация

Электронный компонент: 74LVC27PWDH

Скачать:  PDF   ZIP
Philips
Semiconductors
74LVC27
Triple 3-input NOR gate
Product specification
Supersedes data of 1998 Apr 06
IC24 Data Handbook
1998 Apr 28
INTEGRATED CIRCUITS
Philips Semiconductors
Product specification
74LVC27
Triple 3-input NOR gate
2
1998 Apr 28
853-2056 19309
FEATURES
Wide supply voltage: 1.2 to 3.6 V
In accordance with JEDEC standard no. 8-1A.
Inputs accept voltages up to 5.5 V
CMOS low power consumption
Direct interface with TTL levels
Output capability: standard
I
CC
category: SSI
DESCRIPTION
The 74LVC27 is a high-performance, low-power, low-voltage Si-gate
CMOS device and superior to most advanced CMOS compatible
TTL families.
The 74LVC27 provides the 3-input NOR function.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
C; t
r
= t
f
2.5 ns
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
t
PHL
/t
PLH
Propagation delay
nA, nB, nC to nY
C
L
= 50 pF;
V
CC
= 3.3 V
3.4
ns
C
I
Input capacitance
5.0
pF
C
PD
Power dissipation capacitance per gate
Notes 1 and 2
26
pF
NOTES:
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W)
P
D
= C
PD
V
CC
2
f
i
)
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz; C
L
= output load capacity in pF;
f
o
= output frequency in MHz; V
CC
= supply voltage in V;
(C
L
V
CC
2
f
o
) = sum of the outputs.
2. The condition is V
I
= GND to V
CC.
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE
OUTSIDE NORTH AMERICA
NORTH AMERICA
DWG NUMBER
14-Pin Plastic SO
40
C to +85
C
74LVC27 D
74LVC27 D
SOT108-1
14-Pin Plastic SSOP Type II
40
C to +85
C
74LVC27 DB
74LVC27 DB
SOT337-1
14-Pin Plastic TSSOP Type I
40
C to +85
C
74LVC27 PW
74LVC27PW DH
SOT402-1
PIN CONFIGURATION
1
2
3
4
5
6
7
1A
1B
2A
2B
2C
2Y
GND
V
CC
1C
1Y
3C
3B
3A
3Y
14
13
12
11
10
9
8
SV00446
LOGIC SYMBOL (IEEE/IEC)
2
4
10
1
3
9
13
5
11
12
6
8
SV00448
1
1
1
Philips Semiconductors
Product specification
74LVC27
Triple 3-input NOR gate
1998 Apr 28
3
PIN DESCRIPTION
PIN
NUMBER
SYMBOL
NAME AND FUNCTION
1, 3, 9
1A 3A
Data inputs
2, 4, 10
1B 3B
Data inputs
13, 5, 11
1C 3C
Data inputs
7
GND
Ground (0 V)
12, 6, 8
1Y 3Y
Data outputs
14
V
CC
Positive supply voltage
LOGIC SYMBOL
2C
2A
2Y
5
3
6
2B
4
3C
3A
3Y
11
9
8
3B
10
1C
1A
1Y
13
1
12
1B
2
SV00447
LOGIC DIAGRAM (ONE GATE)
A
C
Y
B
SV00449
FUNCTION TABLE
INPUTS
OUTPUTS
nA
nB
nC
nY
L
L
L
H
X
X
H
L
X
H
X
L
H
X
X
L
NOTES:
H = HIGH voltage level
L = LOW voltage level
X = don't care
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
CONDITIONS
LIMITS
UNIT
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
CC
DC supply voltage (for max. speed performance)
2.7
3.6
V
V
CC
DC supply voltage (for low-voltage applications)
1.2
3.6
V
V
I
DC input voltage range
0
5.5
V
V
O
DC output voltage range
0
V
CC
V
T
amb
Operating free-air temperature range
40
+85
C
t
r
, t
f
Input rise and fall times
V
CC
= 1.2 to 2.7V
V
CC
= 2.7 to 3.6V
0
0
20
10
ns/V
Philips Semiconductors
Product specification
74LVC27
Triple 3-input NOR gate
1998 Apr 28
4
ABSOLUTE MAXIMUM RATINGS
1
In accordance with the Absolute Maximum Rating System (IEC 134)
Voltages are referenced to GND (ground = 0V)
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
V
CC
DC supply voltage
0.5 to +6.5
V
I
IK
DC input diode current
V
I
t
0
50
mA
V
I
DC input voltage
Note 2
0.5 to +5.5
V
I
OK
DC output diode current
V
O
u
V
CC
or V
O
t
0
"
50
mA
V
O
DC output voltage
Note 2
0.5 to V
CC
+0.5
V
I
O
DC output source or sink current
V
O
= 0 to V
CC
"
50
mA
I
GND
, I
CC
DC V
CC
or GND current
"
100
mA
T
stg
Storage temperature range
60 to +150
C
Power dissipation per package
P
TOT
plastic mini-pack (SO)
above +70
C derate linearly with 8 mW/K
500
mW
plastic shrink mini-pack (SSOP and TSSOP)
above +60
C derate linearly with 5.5 mW/K
500
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions voltages are referenced to GND (ground = 0V)
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Temp = -40
C to +85
C
UNIT
MIN
TYP
1
MAX
V
HIGH level Input voltage
V
CC
= 1.2V
V
CC
V
V
IH
HIGH level Input voltage
V
CC
= 2.7 to 3.6V
2.0
V
V
LOW level Input voltage
V
CC
= 1.2V
GND
V
V
IL
LOW level Input voltage
V
CC
= 2.7 to 3.6V
0.8
V
V
CC
= 2.7V; V
I
= V
IH
or V
IL
; I
O
= 12mA
V
CC
*
0.5
V
O
HIGH level output voltage
V
CC
= 3.0V; V
I
= V
IH
or V
IL
; I
O
= 100
A
V
CC
*
0.2
V
CC
V
V
OH
HIGH level output voltage
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
I
O
= 12mA
V
CC
*
0.6
V
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
I
O
= 24mA
V
CC
*
1.0
V
CC
= 2.7V; V
I
= V
IH
or V
IL
; I
O
= 12mA
0.40
V
OL
LOW level output voltage
V
CC
= 3.0V; V
I
= V
IH
or V
IL
; I
O
= 100
A
GND
0.20
V
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
I
O
= 24mA
0.55
I
Input leakage current
V
= 3 6V; V = 5 5V or GND
"
0 1
"
5
A
I
I
Input leakage current
V
CC
= 3.6V; V
I
= 5.5V or GND
"
0.1
"
5
A
I
CC
Quiescent supply current
V
CC
= 3.6V; V
I
= V
CC
or GND; I
O
= 0
0.1
10
A
I
CC
Additional quiescent supply current per
input pin
V
CC
= 2.7V to 3.6V; V
I
= V
CC
0.6V; I
O
= 0
5
500
A
NOTE:
1. All typical values are at V
CC
= 3.3V and T
amb
= 25
C.
Philips Semiconductors
Product specification
74LVC27
Triple 3-input NOR gate
1998 Apr 28
5
AC CHARACTERISTICS
GND = 0 V; t
r
= t
f
v
2.5 ns; C
L
= 50 pF; R
L
= 500
W
; T
amb
= 40
_
C to +85
_
C
LIMITS
SYMBOL
PARAMETER
WAVEFORM
V
CC
= 3.3V
0.3V
V
CC
= 2.7V
UNIT
MIN
TYP
1
MAX
MIN
MAX
t
PHL
/
t
PLH
Propagation delay
nA, nB, nC to nY
Figure 1, 2
3.4
5.9
7.0
ns
NOTE:
1. These typical values are at V
CC
= 3.3V and T
amb
= 25
C.
AC WAVEFORMS
V
M
= 1.5 V at V
CC
w
2.7 V
V
M
= 0.5
S
V
CC
at V
CC
< 2.7 V
V
OL
and V
OH
are the typical output voltage drop that occur with the
output load.
SV00420
VM
nA, nB, nC
INPUT
nY OUTPUT
VM
t PLH
t PHL
GND
VI
VOL
VOH
Figure 1. Input (nA, nB, nC) to output (nY) propagation delays.
TEST CIRCUIT
SWITCH POSITION
PULSE
GENERATOR
RT
VI
D.U.T.
VO
CL
VCC
500
Open
GND
S
1
V
CC
V
I
< 2.7V
V
CC
TEST
S
1
t
PLH/
t
PHL
Open
2.7V
2.73.6V
50pF
500
2 * V
CC
SV00903
Figure 2. Load circuitry for switching times.