2004 Sep 08
2
Philips Semiconductors
Product specification
Dual inverting Schmitt-trigger with
5 V tolerant input
74LVC2G14
FEATURES
Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant input/output for interfacing with 5 V logic
High noise immunity
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8B/JESD36 (2.7 V to 3.6 V).
24 mA output drive (V
CC
= 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Mulltiple package options
ESD protection:
HBM EIA/JESD22-A114-B exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
Specified from
-
40
C to +85
C and
-
40
C to +125
C.
APPLICATIONS
Wave and pulse shapers for highly noisy environments
Astable multivibrators
Monostable multivibrators.
DESCRIPTION
The 74LVC2G14 is a high-performance, low-power,
low-voltage, Si-gate CMOS device and superior to most
advanced CMOS compatible TTL families.
Inputs can be driven from either 3.3 V or 5 V devices. This
feature allows the use of this device as translator in a
mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down
applications using I
off
. The I
off
circuitry disables the output,
preventing the damaging backflow current through the
device when it is powered down.
The 74LVC2G14A provides two inverting buffers with
Schmitt-trigger action. It is capable of transforming slowly
changing input signals into sharply defined, jitter-free
output signals.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
C
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W).
P
D
= C
PD
V
CC
2
f
i
N +
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total switching outputs;
(C
L
V
CC
2
f
o
) = sum of outputs.
2. The condition is V
I
= GND to V
CC
.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
t
PHL
/t
PLH
propagation delay input nA to output nY
V
CC
= 1.8 V; C
L
= 30 pF; R
L
= 1 k
5.6
ns
V
CC
= 2.5 V; C
L
= 30 pF; R
L
= 500
3.7
ns
V
CC
= 2.7 V; C
L
= 50 pF; R
L
= 500
4.1
ns
V
CC
= 3.3 V; C
L
= 50 pF; R
L
= 500
3.9
ns
V
CC
= 5.0 V; C
L
= 50 pF; R
L
= 500
2.7
ns
C
I
input capacitance
3.5
pF
C
PD
power dissipation capacitance per buffer
V
CC
= 3.3 V; notes 1 and 2
18.1
pF
2004 Sep 08
3
Philips Semiconductors
Product specification
Dual inverting Schmitt-trigger with
5 V tolerant input
74LVC2G14
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
ORDERING INFORMATION
PINNING
INPUT
OUTPUT
nA
nY
L
H
H
L
TYPE NUMBER
PACKAGE
TEMPERATURE RANGE
PINS
PACKAGE
MATERIAL
CODE
MARKING
74LVC2G14GW
-
40
C to +125
C
6
SC-88
plastic
SOT363
VK
74LVC2G14GV
-
40
C to +125
C
6
SC-74
plastic
SOT457
V14
74LVC2G14GM
-
40
C to +125
C
6
XSON6
plastic
SOT886
VK
PIN
SYMBOL
DESCRIPTION
1
1A
data input
2
GND
ground (0 V)
3
2A
data input
4
2Y
data output
5
V
CC
supply voltage
6
1Y
data output
14
1A
1Y
GND
2A
2Y
001aab672
1
2
3
6
V
CC
5
4
Fig.1 Pin configuration SC-88 and SC-74.
14
GND
001aab673
1A
2A
V
CC
1Y
2Y
Transparent top view
2
3
1
5
4
6
Fig.2 Pin configuration XSON6.
2004 Sep 08
5
Philips Semiconductors
Product specification
Dual inverting Schmitt-trigger with
5 V tolerant input
74LVC2G14
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. When V
CC
= 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
1.65
5.5
V
V
I
input voltage
0
5.5
V
V
O
output voltage
0
V
CC
V
T
amb
operating ambient temperature
-
40
+125
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.5
+6.5
V
I
IK
input diode current
V
I
< 0 V
-
-
50
mA
V
I
input voltage
note 1
-
0.5
+6.5
V
I
OK
output diode current
V
O
> V
CC
or V
O
< 0 V
-
50
mA
V
O
output voltage
enable mode; notes 1 and 2
-
0.5
V
CC
+ 0.5
V
Power-down mode; notes 1 and 2
-
0.5
+6.5
V
I
O
output source or sink current
V
O
= 0 V to V
CC
-
50
mA
I
CC
, I
GND
V
CC
or GND current
-
100
mA
T
stg
storage temperature
-
65
+150
C
P
D
power dissipation
T
amb
=
-
40
C to +125
C
-
300
mW
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