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Электронный компонент: 74LVC821A

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Philips
Semiconductors
74LVC821A
10-bit D-type flip-flop with 5-volt tolerant
inputs/outputs; positive-edge trigger
(3-State)
Product specification
1998 Sep 25
INTEGRATED CIRCUITS
Philips Semiconductors
Product specification
74LVC821A
10-bit D-type flip-flop with 5-volt tolerant
inputs/outputs; positive-edge trigger (3-State)
2
1998 Sep 25
853-1970 20088
FEATURES
5-volt tolerant inputs/outputs, for interfacing with 5-volt logic
Supply voltage range of 2.7V to 3.6V
Complies with JEDEC standard no. 8-1A
Inputs accept voltages up to 5.5V
CMOS low power consumption
Direct interface with TTL levels
10-bit positive edge-triggered register
Independent register and 3-State buffer operation
Flow-through pin-out architecture
DESCRIPTION
The 74LVC821A is a high performance, low-power, low-voltage
Si-gate CMOS device and superior to most advanced CMOS
compatible TTL families.
Inputs can be driven from either 3.3V or 5.0V devices. In 3-state
operation, outputs can handle 5V. This feature allows the use of
these devices as translators in a mixed 3.3V/5V environment.
The 74LVC821A is a10-bit D-type flip-flop featuring separate D-type
inputs for each flip-flop and 3-State outputs for bus-oriented
applications. A clock (CP) and an output enable (OE) input are
common to all flip-flops. The ten flip-flops will store the state of their
individual D-inputs that meet the set-up and hold times requirements
on the LOW-to-HIGH CP transition. When OE is LOW, the contents
of the ten flip-flops is available at the outputs.
When OE is HIGH, the outputs go to the high impedance OFF-state.
Operation of the OE input does not affect the state of the flip-flops.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
C; t
r
= t
f
2.5 ns
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
t
PHL
/t
PLH
Propagation delay
CP to Q
n
C
L
= 50 pF;
V
3 3 V
5.4
ns
f
max
Maximum clock frequency
V
CC
= 3.3 V
150
MHz
C
I
Input capacitance
5.0
pF
C
PD
Power dissipation capacitance per
flip-flop
Notes 1 and 2
26
pF
NOTES:
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W)
P
D
= C
PD
V
CC
2
f
i
)
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz; C
L
= output load capacity in pF;
f
o
= output frequency in MHz; V
CC
= supply voltage in V;
(C
L
V
CC
2
f
o
) = sum of the outputs.
2. The condition is V
I
= GND to V
CC
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE
ORDERING CODE
PKG. DWG. #
24-Pin Plastic SO
40
C to +85
C
74LVC821A D
SOT137-1
24-Pin Plastic SSOP Type II
40
C to +85
C
74LVC821A DB
SOT340-1
24-Pin Plastic TSSOP Type I
40
C to +85
C
74LVC821A PW
SOT355-1
Philips Semiconductors
Product specification
74LVC821A
10-bit D-type flip-flop with 5-volt tolerant
inputs/outputs; positive-edge trigger (3-State)
1998 Sep 25
3
PIN DESCRIPTION
PIN NUMBER
SYMBOL
NAME AND FUNCTION
1
OE
Output enable input
(active LOW)
2, 3, 4, 5, 6,
7, 8, 9, 10, 11
D
0
to D
9
Data inputs
23, 22, 21, 20,
19, 18, 17, 16,
15, 14
Q
0
to Q
9
3-State flip-flop outputs
12
GND
Ground (0 V)
13
CP
Clock input (LOW-to-HIGH,
edge-triggered)
24
V
CC
Positive supply voltage
FUNCTION TABLE
OPERATING MODES
INPUTS
INTERNAL FLIP FLOPS
OUTPUTS
OPERATING MODES
OE
CP
D
n
INTERNAL FLIP-FLOPS
Q
0
to Q
9
Load and read register
L
L
l
h
L
H
L
H
Load register and disable outputs
H
H
l
h
L
H
Z
Z
Hold
L
H or L
X
NC
NC
H = HIGH voltage level
h
= HIGH voltage level one set-up time prior to the LOW-to-HIGH
CP transition
L
= LOW voltage level
l
= LOW voltage level one set-up time prior to the LOW-to-HIGH
CP transition
Z = high impedance OFF-state
= LOWtoHIGH clock transition
NC= no change
PIN CONFIGURATION
D
0
D
1
D
2
D
3
D
4
D
5
D
6
GND
D
7
D
8
D
9
Q
0
Q
1
Q
2
Q
3
Q
4
V
CC
Q
5
Q
6
Q
7
Q
8
Q9
CP
1
2
3
4
5
6
7
8
9
10
11
12
20
21
22
23
24
19
18
17
16
15
14
13
OE
SA00413
LOGIC SYMBOL
CP
13
Q 7
Q 8
Q 9
2
D 0
Q 0
19
20
21
22
23
9
10
11
D 7
D 8
D 9
8
D 6
Q 6
7
D 5
Q 5
14
6
D 4
Q 4
15
5
D 3
Q 3
16
4
D 2
Q 2
17
3
D 1
Q 1
18
1
OE
SA00414
Philips Semiconductors
Product specification
74LVC821A
10-bit D-type flip-flop with 5-volt tolerant
inputs/outputs; positive-edge trigger (3-State)
1998 Sep 25
4
LOGIC SYMBOL (IEEE/IEC)
23
22
21
20
19
18
17
16
15
14
2
3
4
5
6
7
8
9
10
11
C1
EN
13
1
1D
SA00415
FUNCTIONAL DIAGRAM
FF0 to FF9
3STATE
OUTPUTS
Q 0
Q 1
Q 2
Q 3
Q 4
Q 5
Q 6
Q 7
Q 8
Q 9
D 0
D 1
D 2
D 3
D 4
D 5
D 6
D 7
D 8
D 9
CP
1
19
20
21
22
23
18
17
16
15
14
2
3
4
5
6
7
8
9
10
11
13
OE
SA00416
LOGIC DIAGRAM
D0
D1
D2
D3
D4
D5
D6
D7
D8
D9
CP
OE
D
CP
CP
CP
CP
CP
CP
CP
CP
CP
CP
Q
FF0
D
Q
FF1
D
Q
FF2
D
Q
FF3
D
Q
FF4
D
Q
FF5
D
Q
FF6
D
D
D
Q
Q
Q
FF7
FF8
FF9
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Q8
Q9
SA00417
Philips Semiconductors
Product specification
74LVC821A
10-bit D-type flip-flop with 5-volt tolerant
inputs/outputs; positive-edge trigger (3-State)
1998 Sep 25
5
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
CONDITIONS
LIMITS
UNIT
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
CC
DC supply voltage (for max. speed performance)
2.7
3.6
V
V
CC
DC supply voltage (for low-voltage applications)
1.2
3.6
V
V
I
DC Input voltage range
0
5.5
V
V
O
DC output voltage range; output HIGH or LOW
state
0
V
CC
V
O
DC output voltage range; output 3-State
0
5.5
T
amb
Operating ambient temperature range in free-air
40
+85
C
t
r
, t
f
Input rise and fall times
V
CC
= 1.2 to 2.7V
V
CC
= 2.7 to 3.6V
0
0
20
10
ns/V
ABSOLUTE MAXIMUM RATINGS
1
In accordance with the Absolute Maximum Rating System (IEC 134)
Voltages are referenced to GND (ground = 0V)
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
V
CC
DC supply voltage
0.5 to +6.5
V
I
IK
DC input diode current
V
I
t
0
50
mA
V
I
DC input voltage
Note 2
0.5 to +6.5
V
I
OK
DC output diode current
V
O
u
V
CC
or V
O
t
0
"
50
mA
V
O
DC output voltage; output HIGH or LOW state
Note 2
0.5 to V
CC
+0.5
V
V
O
DC output voltage; output 3-State
Note 2
0.5 to 6.5
V
I
O
DC output source or sink current
V
O
= 0 to V
CC
"
50
mA
I
GND
, I
CC
DC V
CC
or GND current
"
100
mA
T
stg
Storage temperature range
65 to +150
C
Power dissipation per package
P
TOT
plastic mini-pack (SO)
above +70
C derate linearly with 8 mW/K
500
mW
plastic shrink mini-pack (SSOP and TSSOP)
above +60
C derate linearly with 5.5 mW/K
500
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.