Philips
Semiconductors
74LVT20
3.3V Dual 4-input NAND gate
Product specification
1996 Aug 28
INTEGRATED CIRCUITS
IC24 Data Handbook
Philips Semiconductors
Product specification
74LVT20
3.3V Dual 4-input NAND gate
2
1996 Aug 28
853-1871 17244
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
T
amb
= 25
C;
GND = 0V
TYPICAL
UNIT
t
PLH
t
PHL
Propagation
delay
An, Bn, Cn, Dn
to Yn
C
L
= 50pF;
V
CC
= 3.3V
3.4
3.2
ns
C
IN
Input
capacitance
V
I
= 0V or 3.0V
3
pF
I
CCL
Total supply
current
Outputs Low;
V
CC
= 3.6V
0.5
mA
PIN CONFIGURATION
14
13
12
11
10
9
8
7
6
5
4
3
2
1
GND
V
CC
B1
A1
Y1
NC
D1
C1
A0
B0
Y0
NC
C0
D0
SA00350
PIN DESCRIPTION
PIN
NUMBER
SYMBOL
NAME AND FUNCTION
1, 2, 4, 5, 9,
10, 12, 13
An, Bn,
Cn, Dn
Data inputs
6, 8
Yn
Data outputs
7
GND
Ground (0V)
14
V
CC
Positive supply voltage
LOGIC SYMBOL
D0
A1
B1
A0
B0
C0
C1
D1
Y0
Y1
6
8
1
2
4
5
9
10
12
13
V
CC
= Pin 14
GND = Pin 7
SA00351
LOGIC DIAGRAM
V
CC
= Pin 14
GND = Pin 7
SA00352
Y0
6
1
2
4
A0
B0
C0
5
D0
Y1
8
9
10
12
A1
B1
C1
13
D1
LOGIC SYMBOL (IEEE/IEC)
SF00068
&
6
8
1
2
4
5
9
10
12
13
FUNCTION TABLE
INPUTS
OUTPUT
Dna
Dnb
Dnc
Dnd
Qn
L
X
X
X
H
X
L
X
X
H
X
X
L
X
H
X
X
X
L
H
H
H
H
H
L
NOTES:
H = High voltage level
L
= Low voltage level
X = Don't care
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE
OUTSIDE NORTH AMERICA
NORTH AMERICA
DWG NUMBER
14-Pin Plastic SO
40
C to +85
C
74LVT20 D
74LVT20 D
SOT108-1
14-Pin Plastic SSOP
40
C to +85
C
74LVT20 DB
74LVT20 DB
SOT337-1
14-Pin Plastic TSSOP
40
C to +85
C
74LVT20 PW
74LVT20PW DH
SOT402-1
Philips Semiconductors
Product specification
74LVT20
3.3V Dual 4-input NAND gate
1996 Aug 28
3
ABSOLUTE MAXIMUM RATINGS
1, 2
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
V
CC
DC supply voltage
0.5 to +4.6
V
I
IK
DC input diode current
V
I
< 0
50
mA
V
I
DC input voltage
3
0.5 to +7.0
V
I
OK
DC output diode current
V
O
< 0
50
mA
V
OUT
DC output voltage
3
Output in Off or High state
0.5 to +7.0
V
I
OUT
DC output current
Output in High state
32
mA
I
OUT
DC output current
Output in Low state
64
mA
T
stg
Storage temperature range
65 to 150
C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMITS
UNIT
SYMBOL
PARAMETER
MIN
MAX
UNIT
V
CC
DC supply voltage
2.7
3.6
V
V
I
Input voltage
0
5.5
V
V
IH
High-level input voltage
2.0
V
V
IL
Low-level Input voltage
0.8
V
I
OH
High-level output current
20
mA
I
OL
Low-level output current
32
mA
I
OL
Low-level output current; current duty cycle
50%, f
1kHz
48
mA
T
amb
Operating free-air temperature range
40
+85
C
Philips Semiconductors
Product specification
74LVT20
3.3V Dual 4-input NAND gate
1996 Aug 28
4
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions
Voltages are referenced to GND (ground = 0V)
PARAMETER
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Temp = -40
C to +85
C
UNIT
MIN
TYP
1
MAX
V
IK
Input clamp voltage
V
CC
= 2.7V; I
IK
= 18mA
1.2
V
V
OH
High-level output voltage
V
CC
= 2.7 to 3.6V; I
OH
= 100
A
V
CC
0.2
V
V
OH
High-level output voltage
V
CC
= 2.7V; I
OH
= 6mA
2.4
V
V
CC
= 3.0V; I
OH
= 20mA
2.0
V
OL
Low-level output voltage
V
CC
= 2.7V; I
OL
= 100
A
0.2
V
V
OL
Low-level output voltage
V
CC
= 2.7V; I
OL
= 24mA
0.5
V
V
CC
= 3.0V; I
OL
= 32mA
0.5
I
I
Input leakage current
V
CC
= 0 or 3.6V; V
I
= 5.5V
10
A
I
I
Input leakage current
V
CC
= 3.6V; V
I
= V
CC
or GND
1
A
I
OFF
Output off current
V
CC
= 0V; V
I
or V
O
= 0 to 4.5V
100
A
I
CCH
Quiescent supply current
V
CC
= 3.6V; Outputs High, V
I
= GND or
V
CC,
I
O =
0
0.02
mA
I
CCL
Quiescent supply current
V
CC
= 3.6V; Outputs Low, V
I
= GND or V
CC,
I
O =
0
0.5
1.2
mA
I
CC
Additional supply current per input pin
2
V
CC
= 3V to 3.6V; One input at V
CC
0.6V,
Other inputs at V
CC
or GND
0.2
A
C
I
Input capacitance
V
I
= 3V or 0
3
pF
NOTES:
1. All typical values are at V
CC
= 3.3V and T
amb
= 25
C.
2. This is the increase in supply current for each input at the specificed voltage level other than V
CC
or GND.
AC CHARACTERISTICS
GND = 0V; t
R
= t
F
= 2.5ns; C
L
= 50pF, R
L
= 500
; T
amb
= 40
C to +85
C.
LIMITS
SYMBOL
PARAMETER
WAVEFORM
V
CC
= 3.3V
0.3V
V
CC
= 2.7V
UNIT
MIN
TYP
1
MAX
MAX
t
PLH
t
PHL
Propagation delay
An, Bn, Cn, Dn to Yn
1
1.0
1.0
3.4
3.2
5.4
4.4
6.4
4.3
ns
NOTE:
1. All typical values are at V
CC
= 3.3V and T
amb
= 25
C.
AC WAVEFORMS
V
M
= 1.5V, V
IN
= GND to 2.7V
VM
VM
VM
VM
Qn
Dna, Dnb, Dnc, Dnd
tPHL
tPLH
SF00069
Waveform 1.
Propagation Delay for Inverting Outputs
Philips Semiconductors
Product specification
74LVT20
3.3V Dual 4-input NAND gate
1996 Aug 28
5
TEST CIRCUIT AND WAVEFORMS
VM
VM
tW
AMP (V)
NEGATIVE
PULSE
10%
10%
90%
90%
0V
VM
VM
tW
AMP (V)
POSITIVE
PULSE
90%
90%
10%
10%
0V
tTHL (tF)
tTLH (tR)
tTHL (tF)
tTLH (tR)
V
M
= 1.5V
Input Pulse Definition
DEFINITIONS
R
L
=
Load resistor; see AC CHARACTERISTICS for value.
C
L
=
Load capacitance includes jig and probe capacitance;
see AC CHARACTERISTICS for value.
R
T
= Termination resistance should be equal to Z
OUT
of
pulse generators.
INPUT PULSE REQUIREMENTS
FAMILY
Amplitude
Rep. Rate
t
W
t
R
t
F
74LVT
2.7V
10MHz
500ns
2.5ns
2.5ns
PULSE
GENERATOR
VIN
D.U.T.
VOUT
CL
VCC
Test Circuit for Outputs
R
T
RL
SV00022
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