Philips Semiconductors
Product specification
74LVC827A
10-bit buffer/line driver with 5-volt tolerant
inputs/outputs (3-State)
2
1998 Sep 04
8532117 19969
FEATURES
5-volt tolerant inputs/outputs, for interfacing with 5-volt logic
Supply voltage range of 2.7V to 3.6V
Complies with JEDEC standard no. 8-1A
CMOS low power consumption
Direct interface with TTL levels
High impedance when V
CC
= 0V
DESCRIPTION
The 74LVC827A is a high performance, low-power, low-voltage
Si-gate CMOS device and superior to most advanced CMOS
compatible TTL families.
Inputs can be driven from either 3.3V or 5.0V devices. In 3-state
operation, outputs can handle 5V. This feature allows the use of
these devices as translators in a mixed 3.3V/5V environment.
The 74LVC827A is a10-bit buffer/line driver with 3-State outputs The
3-State outputs are controlled by the output enable inputs OE
1
and
OE
2
.
A HIGH on OE
n
causes the outputs to assume a high impedance
OFF-state.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
C; t
r
= t
f
2.5 ns
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
t
PHL
/t
PLH
Propagation delay
A
n
to Y
n
C
L
= 50 pF;
V
CC
= 3.3 V
4
ns
C
I
Input capacitance
5.0
pF
C
PD
Power dissipation capacitance per buffer
Notes 1 and 2
24
pF
NOTES:
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
W)
P
D
= C
PD
V
CC
2
f
i
)
(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz; C
L
= output load capacity in pF;
f
o
= output frequency in MHz; V
CC
= supply voltage in V;
(C
L
V
CC
2
f
o
) = sum of the outputs.
2. The condition is V
I
= GND to V
CC
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE
OUTSIDE NORTH AMERICA
NORTH AMERICA
PKG. DWG. #
24-Pin Plastic SO
40
C to +85
C
74LVC827A D
74LVC827A D
SOT137-1
24-Pin Plastic SSOP Type II
40
C to +85
C
74LVC827A DB
74LVC827A DB
SOT340-1
24-Pin Plastic TSSOP Type I
40
C to +85
C
74LVC827A PW
7LVC827APW DH
SOT355-1
PIN DESCRIPTION
PIN NUMBER
SYMBOL
NAME AND FUNCTION
1, 13
OE
1
, OE
2
Output enable input
(active LOW)
2, 3, 4, 5, 6,
7, 8, 9, 10, 11
A
0
to A
9
Data inputs
12
GND
Ground (0 V)
23, 22, 21, 20,
19, 18, 17, 16,
15, 14
Y
0
to Y
9
Bus outputs
24
V
CC
Positive supply voltage
FUNCTION TABLE
INPUTS
OUTPUTS
OE
1
OE
2
An
Yn
L
L
L
L
L
L
H
H
X
H
X
Z
H
X
X
Z
H = HIGH voltage level
L
= LOW voltage level
X = Don't care
Z = high impedance OFF-state
Philips Semiconductors
Product specification
74LVC827A
10-bit buffer/line driver with 5-volt tolerant
inputs/outputs (3-State)
1998 Sep 04
4
FUNCTIONAL DIAGRAM
2
Y4
Y5
Y6
Y7
Y8
Y9
OE 1
OE
A4
A5
A6
A7
A8
A9
A2
A1
A0
A3
Y2
Y3
Y0
Y1
14
16
15
18
19
20
21
22
23
17
6
7
8
9
10
11
13
1
4
5
2
3
SA00429
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
CONDITIONS
LIMITS
UNIT
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
CC
DC supply voltage (for max. speed performance)
2.7
3.6
V
V
CC
DC supply voltage (for low-voltage applications)
1.2
3.6
V
V
I
DC Input voltage range
0
5.5
V
V
O
DC output voltage range; output HIGH or LOW
state
0
V
CC
V
O
DC output voltage range; output 3-State
0
5.5
T
amb
Operating ambient temperature range in free-air
40
+85
C
t
r
, t
f
Input rise and fall times
V
CC
= 1.2 to 2.7V
V
CC
= 2.7 to 3.6V
0
0
20
10
ns/V
Philips Semiconductors
Product specification
74LVC827A
10-bit buffer/line driver with 5-volt tolerant
inputs/outputs (3-State)
1998 Sep 04
5
ABSOLUTE MAXIMUM RATINGS
1
In accordance with the Absolute Maximum Rating System (IEC 134)
Voltages are referenced to GND (ground = 0V)
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
V
CC
DC supply voltage
0.5 to +6.5
V
I
IK
DC input diode current
V
I
t
0
50
mA
V
I
DC input voltage
Note 2
0.5 to +6.5
V
I
OK
DC output diode current
V
O
u
V
CC
or V
O
t
0
"
50
mA
V
O
DC output voltage; output HIGH or LOW state
Note 2
0.5 to V
CC
+0.5
V
V
O
DC output voltage; output 3-State
Note 2
0.5 to 6.5
V
I
O
DC output source or sink current
V
O
= 0 to V
CC
"
50
mA
I
GND
, I
CC
DC V
CC
or GND current
"
100
mA
T
stg
Storage temperature range
65 to +150
C
Power dissipation per package
P
TOT
plastic mini-pack (SO)
above +70
C derate linearly with 8 mW/K
500
mW
plastic shrink mini-pack (SSOP and TSSOP)
above +60
C derate linearly with 5.5 mW/K
500
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions voltages are referenced to GND (ground = 0V)
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Temp = -40
C to +85
C
UNIT
MIN
TYP
1
MAX
V
HIGH level Input voltage
V
CC
= 1.2V
V
CC
V
V
IH
HIGH level Input voltage
V
CC
= 2.7 to 3.6V
2.0
V
V
LOW level Input voltage
V
CC
= 1.2V
GND
V
V
IL
LOW level Input voltage
V
CC
= 2.7 to 3.6V
0.8
V
V
CC
= 2.7V; V
I
= V
IH
or V
IL
; I
O
= 12mA
V
CC
*
0.5
V
O
HIGH level output voltage
V
CC
= 3.0V; V
I
= V
IH
or V
IL
; I
O
= 100
A
V
CC
*
0.2
V
CC
V
V
OH
HIGH level output voltage
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
I
O
= 18mA
V
CC
*
0.6
V
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
I
O
= 24mA
V
CC
*
0.8
V
CC
= 2.7V; V
I
= V
IH
or V
IL
; I
O
= 12mA
0.40
V
OL
LOW level output voltage
V
CC
= 3.0V; V
I
= V
IH
or V
IL
; I
O
= 100
A
0.20
V
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
I
O
= 24mA
0.55
NOTES:
1. All typical values are at V
CC
= 3.3V and T
amb
= 25
C.
2. The specified overdrive current at the data input forces the data input to the opposite logic input state.
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