1999 Apr 26
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS40W series
FEATURES
Low forward voltage
Guard ring protected
Very small SMD package
Low diode capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
PINNING
PIN
BAS40
W
-04W
-05W
-06W
1
a
1
a
1
a
1
k
1
2
n.c.
k
2
a
2
k
2
3
k
1
k
1
, a
2
k
1
, k
2
a
1
, a
2
Fig.1
Simplified outline
(SOT323) and pin
configuration.
handbook, 2 columns
3
1
2
MBC870
Top view
Fig.2
BAS40W single diode
configuration (symbol).
3
1
2
n.c.
MLC357
Fig.3
BAS40-04W diode
configuration (symbol).
3
1
2
MLC358
Fig.4
BAS40-05W diode
configuration (symbol).
3
1
2
MLC359
Fig.5
BAS40-06W diode
configuration (symbol).
3
1
2
MLC360
MARKING
TYPE NUMBER
MARKING
CODE
BAS40W
63
BAS40-04W
64
BAS40-05W
65
BAS40-06W
66
1999 Apr 26
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS40W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
-
40
V
I
F
continuous forward current
-
120
mA
I
FRM
repetitive peak forward current
t
p
1 s;
0.5
-
120
mA
I
FSM
non-repetitive peak forward current
t
p
<
10 ms
-
200
mA
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V
F
continuous forward voltage
see Fig.6
I
F
= 1 mA
380
mV
I
F
= 10 mA
500
mV
I
F
= 40 mA
1
V
I
R
continuous reverse current
V
R
= 30 V; note 1; see Fig.7
1
A
V
R
= 40 V; note 1; see Fig.7
10
A
charge carrier life time
I
F
= 5 mA; Krakauer method
100
ps
C
d
diode capacitance
V
R
= 0; f = 1 MHz; see Fig.9
5
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
625
K/W
1999 Apr 26
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS40W series
GRAPHICAL DATA
Fig.6
Forward current as a function of forward
voltage; typical values.
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
(4) T
amb
=
-
40
C.
handbook, halfpage
10
2
10
1
10
2
0
MLC361 - 1
0.6
0.8
0.4
0.2
1.0
V (V)
10
1
I F
(mA)
F
(1)
(2)
(3)
(4)
Fig.7
Reverse current as a function of reverse
voltage; typical values.
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
10
3
10
2
10
-
1
10
-
2
10
1
0
MLC362
20
10
40
30
VR (V)
IR
(
A)
(1)
(2)
(3)
Fig.8
Differential forward resistance as a function
of forward current; typical values.
f = 10 KHz.
handbook, halfpage
MLC364
1
10
10
2
1
10
3
10
10
2
10
1
r diff
(
)
I (mA)
F
Fig.9
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
handbook, halfpage
0
10
20
40
30
5
0
4
MLC363
3
2
1
VR (V)
Cd
(pF)
1999 Apr 26
5
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS40W series
PACKAGE OUTLINE
UNIT
A1
max
bp
c
D
E
e1
HE
Lp
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
0.65
e
1.3
2.2
2.0
0.23
0.13
0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323
SC-70
w
M
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
v
M
A
A
B
y
0
1
2 mm
scale
A
X
1
2
3
Plastic surface mounted package; 3 leads
SOT323
97-02-28
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