DATA SHEET
Product specification
Supersedes data of 1996 Sep 17
1999 May 25
DISCRETE SEMICONDUCTORS
BAV20; BAV21
General purpose diodes
M3D176
1999 May 25
2
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
FEATURES
Hermetically sealed leaded glass
SOD27 (DO-35) package
Switching speed: max. 50 ns
General application
Continuous reverse voltage:
max. 150 V, 200 V
Repetitive peak reverse voltage:
max. 200 V, 250 V
Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
General purposes in industrial
equipment e.g. oscilloscopes,
digital voltmeters and video output
stages in colour television.
DESCRIPTION
The BAV20 and BAV21 are switching diodes fabricated in planar technology,
and encapsulated in hermetically sealed leaded glass SOD27 (DO-35)
packages.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diodes are type branded.
handbook, halfpage
MAM246
k
a
1999 May 25
3
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BAV20
-
200
V
BAV21
-
250
V
V
R
continuous peak reverse voltage
BAV20
-
150
V
BAV21
-
200
V
I
F
continuous forward current
see Fig.2; note 1
-
250
mA
I
FRM
repetitive peak forward current
-
625
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
9
A
t = 100
s
-
3
A
t = 1 s
-
1
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
400
mW
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
175
C
1999 May 25
4
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 100 mA
-
1.0
V
I
F
= 200 mA
-
1.25
V
I
R
reverse current
see Fig.5
V
R
= V
Rmax
-
100
nA
V
R
= V
Rmax
; T
j
= 150
C
-
100
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
-
5
pF
t
rr
reverse recovery time
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
;
measured at I
R
= 3 mA; see Fig.8
-
50
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
R
th j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
375
K/W
1999 May 25
5
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
GRAPHICAL DATA
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0
100
200
300
200
0
100
MBG449
Tamb (
o
C)
IF
(mA)
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
0
1
2
600
0
200
400
MBG459
VF (V)
IF
(mA)
(1)
(2)
(3)
(1) T
j
= 150
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG703
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
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