1996 Mar 13
2
Philips Semiconductors
Product specification
Picoampere diode
BAV45
FEATURES
Extremely low leakage current:
max. 5 pA
Low diode capacitance
Light insensitive.
APPLICATION
Clamping
Holding
Peak follower
Time delay circuits
Logarithmic amplifiers
Protection of insulated gate
field-effect transistors.
DESCRIPTION
Silicon diode in a metal TO-18 can. It has an extremely low leakage current over
a wide temperature range combined with a low capacitance and is not sensitive
to light.
CAUTION
Handle the device with care whilst soldering into the circuit. The extremely
low leakage current can only be guaranteed when the bottom is free from
solder flux or other contaminations.
Fig.1
Simplified outline (SOT18/15; TO-18 except for the two leads)
and symbol.
k
MAM207
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
35
V
V
R
continuous reverse voltage
-
20
V
I
F
continuous forward current
see Fig.2
-
50
mA
I
FRM
repetitive peak forward current
-
100
mA
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
200
mW
T
stg
storage temperature
-
65
+125
C
T
j
junction temperature
-
125
C
1996 Mar 13
3
Philips Semiconductors
Product specification
Picoampere diode
BAV45
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 10 mA; see Figs 3 and 4
1
V
I
R
reverse current
see Fig.5
V
R
= 5 V
5
pA
V
R
= 5 V; T
j
= 80
C
250
pA
V
R
= 20 V
10
pA
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
1.3
pF
t
rr
reverse recovery time
when switched from I
F
= 10 mA to I
R
= 10 mA;
R
L
= 100
; measured at I
R
= 1 mA; see Fig.7
600
ns
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient; note 1
500
K/W
GRAPHICAL DATA
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0
100
50
IF
(mA)
150
100
0
50
MBG530
Tamb (
o
C)
T
j
= 25
C.
Fig.3
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0
1.0
0.5
1.5
100
80
0
20
60
40
MBG528
VF (V)
IF
(mA)
1996 Mar 13
4
Philips Semiconductors
Product specification
Picoampere diode
BAV45
T
j
= 25
C.
Fig.4
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
10
-
1
1
10
10
2
10
3
10
4
10
5
10
6
10
7
10
8
10
9
10
10
1.00
VF (V)
0.75
0.25
0
MBG527
0.50
IF
(pA)
(1) V
R
= 20 V; maximum values.
(2) V
R
= 5 V; maximum values.
(3) V
R
= 20 V; typical values.
(4) V
R
= 5 V; typical values.
Fig.5
Reverse current as a function of junction
temperature.
handbook, halfpage
10
4
10
3
10
2
10
1
150
50
0
IR
(pA)
MBG529
100
Tj (
o
C)
(1)
(2) (3)
(4)
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
1.0
0.7
0.9
Cd
(pF)
10
-
1
1
10
VR (V)
10
2
MBG531
0.8
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