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Электронный компонент: BB804Y

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DATA SHEET
Product specification
Supersedes data of 1996 May 03
1998 Nov 25
DISCRETE SEMICONDUCTORS
BB804
VHF variable capacitance double
diode
alfpage
M3D088
1998 Nov 25
2
Philips Semiconductors
Product specification
VHF variable capacitance double diode
BB804
FEATURES
Selected capacitance range
Small plastic SMD package
C8: 26 pF; ratio: 1.7
Low series resistance.
APPLICATIONS
Electronic tuning in FM radio
applications.
DESCRIPTION
The BB804 is a variable capacitance
double diode with a common cathode,
fabricated in planar technology, and
encapsulated in the SOT23 small
plastic SMD package.
MARKING
TYPE NUMBER
CODE
BB804
SF5
BB804W
SF2
PINNING
PIN
DESCRIPTION
1
anode (a
1
)
2
anode (a
2
)
3
common cathode
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM169
2
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Per diode
V
R
continuous reverse voltage
-
18
V
I
F
continuous forward current
-
50
mA
T
stg
storage temperature
-
55
+150
C
T
j
operating junction temperature
-
55
+125
C
1998 Nov 25
3
Philips Semiconductors
Product specification
VHF variable capacitance double diode
BB804
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. V
R
is the value at which C
d
= 38 pF.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
I
R
reverse current
V
R
= 16 V; see Fig.3
-
-
20
nA
V
R
= 16 V; T
j
= 60
C; see Fig.3
-
-
200
nA
r
s
diode series resistance
f = 100 MHz; note 1
-
0.2
-
C
d
diode capacitance
V
R
= 2 V; f = 1 MHz; see Figs 2 and 4
42
-
46.5
pF
V
R
= 2 V; f = 1 MHz; white 2; see Figs 2 and 4
44
-
45.5
pF
capacitance ratio
f = 1 MHz
1.65
-
1.75
C
d 2V
(
)
C
d 8V
(
)
------------------
1998 Nov 25
4
Philips Semiconductors
Product specification
VHF variable capacitance double diode
BB804
GRAPHICAL DATA
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
f = 1 MHz; T
amb
= 25
C.
handbook, full pagewidth
75
(pF)
25
0
10
MGC815
1
V
R
(V)
10
-
1
50
Cd
Fig.3
Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
100
0
10
MGC810
10
2
10
(nA)
I
R
3
20
40
60
80
Tj (
o
C)
Fig.4
Temperature coefficient of diode
capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
MLC815
1
10
10
2
10
3
10
4
10
5
10
1
(K
-
1
)
V (V)
R
d
TC
1998 Nov 25
5
Philips Semiconductors
Product specification
VHF variable capacitance double diode
BB804
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
IEC
JEDEC
EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23