Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- PINNING
- QUICK REFERENCE DATA
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 12
DISCRETE SEMICONDUCTORS
BC140; BC141
NPN medium power transistors
M3D110
1997 May 12
2
Philips Semiconductors
Product specification
NPN medium power transistors
BC140; BC141
FEATURES
High current (max. 1 A)
Low voltage (max. 60 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
PNP complements: BC160 and BC161.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
handbook, halfpage
3
1
2
MAM317
1
2
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BC140
-
-
80
V
BC141
-
-
100
V
V
CEO
collector-emitter voltage
open base
BC140
-
-
40
V
BC141
-
-
60
V
I
CM
peak collector current
-
-
1.5
A
P
tot
total power dissipation
T
case
45
C
-
-
3.7
W
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 1 V
BC140-10; BC141-10
63
100
160
BC140-16; BC141-16
100
160
250
f
T
transition frequency
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
50
-
-
MHz
1997 May 12
3
Philips Semiconductors
Product specification
NPN medium power transistors
BC140; BC141
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BC140
-
80
V
BC141
-
100
V
V
CEO
collector-emitter voltage
open base
BC140
-
40
V
BC141
-
60
V
V
EBO
emitter-base voltage
open collector
-
7
V
I
C
collector current (DC)
-
1
A
I
CM
peak collector current
-
1.5
A
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
case
45
C
-
3.7
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
175
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air
200
K/W
R
th j-c
thermal resistance from junction to case
35
K/W
1997 May 12
4
Philips Semiconductors
Product specification
NPN medium power transistors
BC140; BC141
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 60 V
-
10
100
nA
I
E
= 0; V
CB
= 60 V; T
j
= 150
C
-
10
100
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
-
100
nA
h
FE
DC current gain
I
C
= 100
A; V
CE
= 1 V
BC140-10; BC141-10
-
40
-
BC140-16; BC141-16
-
90
-
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 1 V
BC140-10; BC141-10
63
100
160
BC140-16; BC141-16
100
160
250
h
FE
DC current gain
I
C
= 1 A; V
CE
= 1 V
BC140-10; BC141-10
-
20
-
BC140-16; BC141-16
-
30
-
V
CEsat
collector-emitter saturation voltage
I
C
= 1 A; I
B
= 100 mA
-
0.6
1
V
V
BE
base-emitter voltage
I
C
= 1 A; V
CE
= 1 V
-
1.2
1.8
V
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
-
25
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
-
80
pF
f
T
transition frequency
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
50
-
-
MHz
Switching times (between 10% and 90% levels)
t
on
turn-on time
I
Con
= 100 mA; I
Bon
= 5 mA;
I
Boff
=
-
5 mA
-
-
250
ns
t
off
turn-off time
-
-
850
ns
1997 May 12
5
Philips Semiconductors
Product specification
NPN medium power transistors
BC140; BC141
PACKAGE OUTLINE
UNIT
a
b
D
D
1
j
k
L
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
6.60
6.35
0.48
0.41
9.39
9.08
8.33
8.18
0.85
0.75
0.95
0.75
14.2
12.7
0.2
45
DIMENSIONS (mm are the original dimensions)
SOT5/11
TO-39
97-04-11
k
j
D
A
L
seating plane
b
D
1
0
5
10 mm
scale
A
5.08
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
A
w
A
M
M
B
M
B
a
1
2
3
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