1999 Apr 15
2
Philips Semiconductors
Product specification
NPN general purpose transistor
BC337
FEATURES
High current (max. 500 mA)
Low voltage (max. 45 V).
APPLICATIONS
General purpose switching and amplification,
e.g. driver and output stages of audio amplifiers.
DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complement: BC327.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
collector
Fig.1
Simplified outline (TO-92; SOT54) and
symbol.
handbook, halfpage
1
3
2
MAM182
3
2
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
50
V
V
CEO
collector-emitter voltage
open base
-
45
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
500
mA
I
CM
peak collector current
-
1
A
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
625
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 15
3
Philips Semiconductors
Product specification
NPN general purpose transistor
BC337
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Note
1. V
BE
decreases by about 2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
0.2
K/mW
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 20 V
-
-
100
nA
I
E
= 0; V
CB
= 20 V; T
j
= 150
C
-
-
5
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
-
100
nA
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 1 V;
see Figs 2, 3 and 4
BC337
100
-
600
BC337-16
100
-
250
BC337-25
160
-
400
BC337-40
250
-
600
DC current gain
I
C
= 500 mA; V
CE
= 1 V;
see Figs 2, 3 and 4
40
-
-
V
CEsat
collector-emitter saturation
voltage
I
C
= 500 mA; I
B
= 50 mA
-
-
700
mV
V
BE
base-emitter voltage
I
C
= 500 mA; V
CE
= 1 V; note 1
-
-
1.2
V
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
5
-
pF
f
T
transition frequency
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
100
-
-
MHz
1999 Apr 15
4
Philips Semiconductors
Product specification
NPN general purpose transistor
BC337
Fig.2 DC current gain; typical values.
BC337-16.
handbook, full pagewidth
0
20
40
80
120
160
MBH721
10
-
1
1
hFE
10
IC (mA)
10
2
10
3
VCE = 1 V
Fig.3 DC current gain; typical values.
BC337-25.
handbook, full pagewidth
0
500
100
200
300
400
MBH720
10
-
1
1
hFE
10
IC (mA)
10
2
10
3
VCE = 1 V
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