DATA SHEET
Product specification
File under Discrete Semiconductors, SC14
September 1995
DISCRETE SEMICONDUCTORS
BFR94A
NPN 3.5 GHz wideband transistor
September 1995
2
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
DESCRIPTION
NPN resistance-stabilized transistor
in a SOT122E capstan envelope.
It features extremely low cross
modulation, intermodulation and
second order intermodulation
distortion. Due to its high transition
frequency, it has a high power gain, in
conjunction with good wideband
properties, and low noise up to high
frequencies.
It is primarily intended for CATV and
MATV applications.
The BFR94A is a replacement for the
BFR94. The SOT122E footprint is
similar to that of the SOT48, used for
the BFR94.
PINNING
PIN
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
Fig.1 SOT122E.
lfpage
MBB904
1
4
3
2
C
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
30
V
V
CEO
collector-emitter voltage
open base
-
25
V
I
C
DC collector current
-
150
mA
P
tot
total power dissipation
up to T
c
= 145
C; f
>
1 MHz
-
3.5
W
f
T
transition frequency
I
c
= 90 mA; V
CE
= 20 V; f = 500 MHz;
T
j
= 25
C
3.5
-
GHz
F
noise figure
I
c
= 90 mA; V
CE
= 20 V; f = 200 MHz;
T
amb
= 25
C
8
10
dB
d
im
intermodulation distortion
I
c
= 90 mA; V
CE
= 20 V;
V
o
= 60 dBmV; f
(p
+
q
-
r)
= 194.25 MHz
-
63
-
dB
d
2
second order intermodulation
distortion
I
c
= 90 mA; V
CE
= 20 V;
V
o
= 48 dBmV; f
p
+
f
q
= 210 MHz
-
-
56
dB
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
September 1995
3
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
30
V
V
CEO
collector-emitter voltage
open base
-
25
V
V
CER
collector-emitter voltage
R
BE
= 100
-
35
V
V
EBO
emitter-base voltage
open collector
-
3
V
I
C
DC collector current
-
150
mA
I
CM
peak collector current
f
>
1 MHz
-
300
mA
P
tot
total power dissipation
up to T
c
= 145
C; f
>
1 MHz
-
3.5
W
T
stg
storage temperature
-
65
200
C
T
j
junction temperature
-
200
C
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-c
thermal resistance from junction to case
15 K/W
September 1995
4
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2. I
C
= 90 mA; V
CE
= 20 V; R
L
= 75
;
V
p
= V
o
= 60 dBmV at f
p
= 196.25 MHz;
V
q
= V
o
-
6 dB at f
q
= 203.25 MHz;
V
r
= V
o
-
6 dB at f
r
= 205.25 MHz;
measured at f
(p
+
q
-
r
) = 194.25 MHz.
3. I
C
= 90 mA; V
CE
= 20 V;
f
p
= 66 MHz; f
q
= 144 MHz; f
p
+
f
q
= 210 MHz; V
o
= 48 dBmV.
4. d
im
=
-
60 dB (DIN 45004B); I
c
= 90 mA; V
CE
= 20 V; R
L
= 75
; T
amb
= 25
C;
V
p
= V
o
at d
im
=
-
60 dB; f
p
= 495.25 MHz;
V
q
= V
o
-
6 dB; f
q
= 503.25 MHz;
V
r
= V
o
-
6 dB; f
r
= 505.25 MHz;
measured at f
(p
+
q
-
r)
= 493.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 20 V
-
-
50
A
h
FE
DC current gain
I
C
= 50 mA; V
CE
= 20 V
30
-
-
I
C
= 150 mA; V
CE
= 20 V
30
-
-
f
T
transition frequency
I
C
= 90 mA; V
CE
= 20 V; f = 500 MHz
-
3.5
-
GHz
I
C
= 150 mA; V
CE
= 20 V;
f = 500 MHz
-
3.5
-
GHz
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 20 V; f = 1 MHz
-
3.5
-
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
-
12
-
pF
C
re
feedback capacitance
I
C
= 10 mA; V
CE
= 20 V; f = 1 MHz
-
1.3
-
pF
C
cs
collector-stud capacitance
f = 1 MHz
-
2
-
pF
G
UM
maximum unilateral power gain
(note 1)
I
C
= 90 mA; V
CE
= 20 V;
f = 500 MHz; T
amb
= 25
C
-
13.5
-
dB
F
noise figure
I
C
= 90 mA; V
CE
= 20 V;
f = 200 MHz; T
amb
= 25
C
-
8
10
dB
I
C
= 90 mA; V
CE
= 20 V;
f = 500 MHz; T
amb
= 25
C
-
5
-
dB
d
im
intermodulation distortion
note 2
-
-
63
-
dB
d
2
second order intermodulation
distortion
note 3
-
-
-
56
dB
V
o
output voltage
see Fig.2 and note 4
-
700
-
mV
G
UM
10 log
S
21
2
1
S
11
2
1
S
22
2
--------------------------------------------------------------
dB.
=
September 1995
5
Philips Semiconductors
Product specification
NPN 3.5 GHz wideband transistor
BFR94A
Fig.2 Intermodulation distortion MATV test circuit.
L1 = L2 = 5
H Ferroxcube choke, catalogue
number 3122 108 20153.
handbook, halfpage
MEA497
19
2.2 nF
1.5 k
L1
10 nF
75
240
L2
2.2 nF
10 nF
1 nF
DUT
75
VCC
V
BB
Fig.3
Transition frequency as a function of
collector current.
V
CE
= 20 V; f = 500 MHz; T
j
= 25
C.
handbook, halfpage
4
2
1
0
MEA496
10
10
3
(GHz)
I (mA)
C
2
10
3
f T
Fig.4
Intermodulation distortion as a function of
collector current.
Measured in CATV test circuit.
V
CE
= 20 V; V
o
= 60 dBmV;
f
(p
+
q
-
r)
= 194. 25 MHz.
handbook, halfpage
0
150
30
80
70
MEA495
60
50
40
50
100
d im
(dB)
I (mA)
C
Fig.5
Second order intermodulation distortion as
a function of collector current.
Measured in CATV test circuit.
V
CE
= 20 V; V
o
= 48 dBmV; f = 210 MHz.
handbook, halfpage
0
150
30
80
70
MEA494
60
50
40
50
100
d 2
(dB)
I (mA)
C
PDF 
ZIP