DATA SHEET
Product specification
Supersedes data of May 1993
1996 Feb 19
DISCRETE SEMICONDUCTORS
BYV99
Ultra fast low-loss
controlled avalanche rectifier
handbook, 2 columns
M3D116
1996 Feb 19
2
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYV99
FEATURES
Glass passivated
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
600
V
V
R
continuous reverse voltage
-
600
V
I
F(AV)
average forward current
T
tp
= 50
C; lead length = 10 mm
see Fig. 2;
averaged over any 20 ms period;
see also Fig. 6
-
1.00
A
T
amb
= 60
C; PCB mounting (see
Fig.10); see Fig. 3;
averaged over any 20 ms period;
see also Fig. 6
-
0.55
A
I
FRM
repetitive peak forward current
T
tp
= 50
C; see Fig. 4
-
9
A
T
amb
= 60
C; see Fig. 5
-
5
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
-
20
A
E
RSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
-
10
mJ
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
65
+150
C
1996 Feb 19
3
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYV99
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
m, see Fig.10.
For more information please refer to the
"General Part of associated Handbook".
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max
; see Fig. 7
-
-
1.5
V
I
F
= 1 A; see Fig. 7
-
-
2.7
V
V
(BR)R
reverse avalanche
breakdown voltage
I
R
= 0.1 mA
700
-
-
V
I
R
reverse current
V
R
= V
RRMmax
;
see Fig. 8
-
-
5
A
V
R
= V
RRMmax
; T
j
= 150
C;
see Fig. 8
-
-
75
A
t
rr
reverse recovery time
when switched from I
F
= 0.5 A
to I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig. 12
-
-
15
ns
C
d
diode capacitance
f = 1 MHz; V
R
= 0 V; see Fig. 9
-
75
-
pF
maximum slope of reverse
recovery current
when switched from I
F
= 1 A to
V
R
30 V and dI
F
/dt =
-
1 A/
s;
see Fig.11
-
-
3
A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
46
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
100
K/W
dI
R
dt
--------
1996 Feb 19
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYV99
GRAPHICAL DATA
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
o
1.2
(A)
IF(AV)
0.4
0.8
0
200
MRC270
100
Ttp ( C)
a = 1.42; V
R
= V
RRMmax
;
= 0.5.
Device mounted as shown in Fig.10.
Switched mode application.
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
0.8
0.6
0.2
0
0.4
MRC269
100
o
(A)
IF(AV)
Tamb ( C)
T
tp
= 50
C; R
th j-tp
= 46 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 600 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
10
0
10
10
1
10
10
2
10
3
10
4
MRC272
2
4
6
8
tp (ms)
2
1
I FRM
(A)
0.1
0.2
0.5
1.0
=
0.05
1996 Feb 19
5
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYV99
T
amb
= 60
C; R
th j-a
= 100 K/W.
V
RRMmax
during 1
-
; curves include derating for T
j max
at V
RRM
= 600 V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
5.0
0
10
10
1
10
10
2
10
3
10
4
MRC271
1.0
2.0
3.0
4.0
tp (ms)
2
1
I FRM
(A)
0.5
1.0
0.1
0.2
=
0.05
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
= 0.5.
Fig.6
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
3
P
(W)
2
1
0
2
MGC593
1
IF(AV) (A)
2
1.57
1.42
a=3 2.5
Dotted line: T
j
= 150
C.
Solid line: T
j
= 25
C.
Fig.7
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
6
(A)
IF
4
2
0
2
4
VF (V)
6
MRA948
1996 Feb 19
6
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYV99
V
R
= V
RRMmax
.
Fig.8
Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
200
0
1
MGC594
10
(A)
IR
10
2
100
o
Tj ( C)
f = 1 MHz; T
j
= 25
C.
Fig.9
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
1
MGC592
10
10
2
10
3
1
10
2
10
(pF)
Cd
VR (V)
Fig.10 Device mounted on a printed-circuit board.
Dimensions in mm.
handbook, halfpage
MGA200
3
2
7
50
25
50
Fig.11 Reverse recovery definitions.
andbook, halfpage
10%
100%
dI
dt
t
trr
IF
IR
MGC499
F
dI
dt
R
1996 Feb 19
7
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYV99
Fig.12 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 M
, 22 pF; t
r
7 ns.
Source impedance: 50
; t
r
15 ns.
handbook, full pagewidth
10
1
50
25 V
DUT
MAM057
+
t rr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
1996 Feb 19
8
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifier
BYV99
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.13 SOD57.
Dimensions in mm.
The marking band indicates the cathode.
handbook, full pagewidth
,
,
,
3.81
max
MBC880
k
a
28 min
28 min
4.57
max
0.81
max
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