DATA SHEET
Product specification
Supersedes data of 1998 Oct 16
File under Integrated Circuits, IC01
2000 Mar 08
INTEGRATED CIRCUITS
TDA1519C
22 W BTL or 2
11 W stereo power
amplifier
2000 Mar 08
2
Philips Semiconductors
Product specification
22 W BTL or 2
11 W stereo power
amplifier
TDA1519C
FEATURES
Requires very few external components for Bridge-Tied
Load (BTL)
Stereo or BTL application
High output power
Low offset voltage at output (important for BTL)
Fixed gain
Good ripple rejection
Mute/standby switch
Load dump protection
AC and DC short-circuit-safe to ground and V
P
Thermally protected
Reverse polarity safe
Capability to handle high energy on outputs (V
P
= 0 V)
No switch-on/switch-off plop
Protected against electrostatic discharge
Low thermal resistance
Identical inputs (inverting and non-inverting)
Pin compatible with TDA1519B (TDA1519C and
TDA1519CSP).
GENERAL DESCRIPTION
The TDA1519C is an integrated class-B dual output
amplifier in a 9-lead plastic single in-line (SIL) power or
20-lead heatsink small outline package.
For the TDA1519CTH (SOT418-2) the heatsink is
positioned on top of the package, thereby allowing an
external heatsink to be mounted on top. The heatsink of
the TDA1519CTD (SOT397-1) is facing the PCB thereby
allowing the heatsink to be soldered on the copper area of
the PCB.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA1519C
SIL9P
plastic single in-line power package; 9 leads
SOT131-2
TDA1519CSP
SMS9P
plastic surface mounted single in-line power package; 9 leads
SOT354-1
TDA1519CTH
HSOP20
heatsink small outline package; 20 leads; low stand-off
SOT418-2
TDA1519CTD
HSOP20
heatsink small outline package; 20 leads
SOT397-1
2000 Mar 08
3
Philips Semiconductors
Product specification
22 W BTL or 2
11 W stereo power
amplifier
TDA1519C
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
V
P
supply voltage
operating
6.0
14.4
17.5
V
non-operating
-
-
30
V
load dump protected
-
-
45
V
I
ORM
repetitive peak output current
-
-
4
A
I
q(tot)
total quiescent current
-
40
80
mA
I
stb
standby current
-
0.1
100
A
I
sw(on)
switch-on current
-
-
40
A
Inputs
Z
i
input impedance
BTL
25
-
-
k
stereo
50
-
-
k
Stereo application
P
o
output power
THD = 10%
R
L
= 4
-
6
-
W
R
L
= 2
-
11
-
W
cs
channel separation
40
-
-
dB
V
n(o)(rms)
noise output voltage (RMS value)
-
150
-
V
BTL application
P
o
output power
THD = 10%; R
L
= 4
-
22
-
W
SVRR
supply voltage ripple rejection
R
S
= 0
f = 100 Hz
34
-
-
dB
f = 1 to 10 kHz
48
-
-
dB
V
OO
DC output offset voltage
-
-
250
mV
T
j
junction temperature
-
-
150
C
2000 Mar 08
4
Philips Semiconductors
Product specification
22 W BTL or 2
11 W stereo power
amplifier
TDA1519C
BLOCK DIAGRAM
Fig.1 Block diagram.
MGL491
handbook, full pagewidth
60
k
input
reference
voltage
power
ground
(substrate)
+
+
-
5
signal
ground
2
7
9
6
183
18.1 k
3
TDA1519C
15 k
15 k
VA
VA
Cm
mute switch
power stage
60
k
standby
reference
voltage
mute
reference
voltage
1
NINV
RR
INV
OUT2
M/SS
OUT1
GND1
GND2
VP
4
8
183
18.1 k
VA
Cm
mute switch
power stage
+
-
mute
switch
standby
switch
1
VP
The pin numbers refer to the TDA1519C and TDA1519CSP.
2000 Mar 08
5
Philips Semiconductors
Product specification
22 W BTL or 2
11 W stereo power
amplifier
TDA1519C
PINNING
SYMBOL
PIN
DESCRIPTION
TDA1519C;
TDA1519CSP
TDA1519CTD
TDA1519CTH
NINV
1
19
2
non-inverting input
GND1
2
20
1
ground 1 (signal)
RR
3
1
20
supply voltage ripple rejection
OUT1
4
3
18
output 1
GND2
5
5
16
ground 2 (substrate)
OUT2
6
8
13
output 2
V
P
7
10
11
positive supply voltage
M/SS
8
11
10
mute/standby switch input
INV
9
12
9
inverting input
n.c.
-
2, 4, 6, 7, 9
and 13 to 18
3 to 8, 12, 14,
15, 17 and 19
not connected
Fig.2
Pin configuration
(SOT131-2 and 354-1).
halfpage
NINV
GND1
RR
OUT1
GND2
OUT2
VP
M/SS
INV
1
2
3
4
5
6
7
8
9
TDA1519C
TDA1519CSP
MGR561
fpage
RR
n.c.
OUT1
n.c.
GND2
n.c.
n.c.
OUT2
n.c.
VP
GND1
NINV
n.c.
n.c.
n.c.
n.c.
n.c.
n.c.
INV
M/SS
1
2
3
4
5
6
7
8
9
10
11
12
20
19
18
17
16
15
14
13
TDA1519CTD
MGL937
Fig.3
Pin configuration
(SOT397-1).
fpage
GND1
NINV
n.c.
n.c.
n.c.
n.c.
n.c.
n.c.
INV
M/SS
RR
n.c.
OUT1
n.c.
n.c.
n.c.
GND2
OUT2
n.c.
VP
1
2
3
4
5
6
7
8
9
10
11
12
20
19
18
17
16
15
14
13
TDA1519CTH
MGL936
Fig.4
Pin configuration
(SOT418-2).
2000 Mar 08
6
Philips Semiconductors
Product specification
22 W BTL or 2
11 W stereo power
amplifier
TDA1519C
FUNCTIONAL DESCRIPTION
The TDA1519C contains two identical amplifiers with differential input stages. The gain of each amplifier is fixed at 40 dB.
A special feature of this device is the mute/standby switch which has the following features:
Low standby current (<100
A)
Low mute/standby switching current (low cost supply switch)
Mute condition.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
P
supply voltage
operating
-
17.5
V
non-operating
-
30
V
load dump protected;
during 50 ms; t
r
2.5 ms
-
45
V
V
sc
AC and DC short-circuit-safe voltage
-
17.5
V
V
rp
reverse polarity voltage
-
6
V
energy handling capability at outputs
V
P
= 0 V
-
200
mJ
I
OSM
non-repetitive peak output current
-
6
A
I
ORM
repetitive peak output current
-
4
A
P
tot
total power dissipation
see Fig.5
-
25
W
T
j
junction temperature
-
150
C
T
stg
storage temperature
-
55
+150
C
Fig.5 Power derating curve for SIL9P.
handbook, halfpage
-
25
0
50
150
30
10
0
20
MGL492
100
Ptot
(W)
Tamb (
C)
(1)
(2)
(3)
(1) Infinite heatsink.
(2) R
th(c-a)
= 5 K/W.
(3) R
th(c-a)
= 13 K/W.
2000 Mar 08
7
Philips Semiconductors
Product specification
22 W BTL or 2
11 W stereo power
amplifier
TDA1519C
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
V
P
= 14.4 V; T
amb
= 25
C; measurements taken using Fig.6; unless otherwise specified.
Notes
1. The circuit is DC adjusted at V
P
= 6 to 17.5 V and AC operating at V
P
= 8.5 to 17.5 V.
2. At V
P
= 17.5 to 30 V, the DC output voltage
0.5V
P
.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
in free air
TDA1519C
40
K/W
TDA1519CTH and TDA1519CTD
40
K/W
R
th(j-c)
thermal resistance from junction to case
TDA1519C
3
K/W
TDA1519CTH and TDA1519CTD
3
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
V
P
supply voltage
note 1
6.0
14.4
17.5
V
I
q(tot)
total quiescent current
-
40
80
mA
V
O
DC output voltage
note 2
-
6.95
-
V
V
OO
DC output offset voltage
-
-
250
mV
Mute/standby switch
V
sw(on)
switch-on voltage level
8.5
-
-
V
Mute condition
V
mute
mute voltage
3.3
-
6.4
V
V
O
output signal in mute position
V
I
= 1 V (max.); f = 20 Hz to 15 kHz
-
-
20
mV
V
OO
DC output offset voltage
-
-
250
mV
Standby condition
V
stb
standby voltage
standby mode
0
-
2
V
I
stb
standby current
standby mode
-
-
100
A
I
sw(on)
switch-on current
-
12
40
A
2000 Mar 08
8
Philips Semiconductors
Product specification
22 W BTL or 2
11 W stereo power
amplifier
TDA1519C
AC CHARACTERISTICS
V
P
= 14.4 V; R
L
= 4
; f = 1 kHz; T
amb
= 25
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Stereo application (see Fig.6)
P
o
output power
note 1
THD = 0.5%
4
5
-
W
THD = 10%
5.5
6.0
-
W
R
L
= 2
; note 1
THD = 0.5%
7.5
8.5
-
W
THD = 10%
10
11
-
W
THD
total harmonic distortion
P
o
= 1 W
-
0.1
-
%
f
ro(l)
low frequency roll-off
-
3 dB; note 2
-
45
-
Hz
f
ro(h)
high frequency roll-off
-
1 dB
20
-
-
kHz
G
v(cl)
closed-loop voltage gain
39
40
41
dB
SVRR
supply voltage ripple rejection
on; notes 3 and 4
40
-
-
dB
on; notes 3 and 5
45
-
-
dB
mute; notes 3 and 6
45
-
-
dB
standby;
notes 3 and 6
80
-
-
dB
Z
i
input impedance
50
60
75
k
V
n(o)(rms)
noise output voltage (RMS value)
note 7
on; R
S
= 0
-
150
-
V
on; R
S
= 10 k
-
250
500
V
mute; note 8
-
120
-
V
cs
channel separation
R
S
= 10 k
40
-
-
dB
G
v(ub)
channel unbalance
-
0.1
1
dB
BTL application (see Fig.7)
P
o
output power
note 1
THD = 0.5%
15
17
-
W
THD = 10%
20
22
-
W
output power at V
P
= 13.2 V
note 1
THD = 0.5%
-
13
-
W
THD = 10%
-
17.5
-
W
THD
total harmonic distortion
P
o
= 1 W
-
0.1
-
%
B
p
power bandwidth
THD = 0.5%;
P
o
=
-
1 dB; with
respect to 15 W
-
35 to
15000
-
Hz
f
ro(l)
low frequency roll-off
-
1 dB; note 2
-
45
-
Hz
f
ro(h)
high frequency roll-off
-
1 dB
20
-
-
kHz
G
v(cl)
closed-loop voltage gain
45
46
47
dB
2000 Mar 08
9
Philips Semiconductors
Product specification
22 W BTL or 2
11 W stereo power
amplifier
TDA1519C
Notes
1. Output power is measured directly at the output pins of the IC.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source impedance of 0
(maximum ripple amplitude of 2 V).
4. Frequency f = 100 Hz.
5. Frequency between 1 and 10 kHz.
6. Frequency between 100 Hz and 10 kHz.
7. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz.
8. Noise output voltage independent of R
S
(V
i
= 0 V).
SVRR
supply voltage ripple rejection
on; notes 3 and 4
34
-
-
dB
on; notes 3 and 5
48
-
-
dB
mute; notes 3 and 6
48
-
-
dB
standby;
notes 3 and 6
80
-
-
dB
Z
i
input impedance
25
30
38
k
V
n(o)(rms)
noise output voltage (RMS value)
note 7
on; R
S
= 0
-
200
-
V
on; R
S
= 10 k
-
350
700
V
mute; note 8
-
180
-
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
2000 Mar 08
10
Philips Semiconductors
Product specification
22 W BTL or 2
11 W stereo power
amplifier
TDA1519C
APPLICATION INFORMATION
Fig.6 Stereo application diagram (SOT131-2 and SOT354-1).
handbook, full pagewidth
2200
F
1000
F
100
F
100
nF
220 nF
60 k
input
reference
voltage
40 dB
+
-
1
220 nF
60 k
40 dB
-
+
9
5
4
6
inverting input
non-inverting input
internal
1/2 VP
VP
power
ground
2
signal
ground
TDA1519C
3
8
7
standby switch
MGL493
Fig.7 BTL application diagram (SOT131-2 and SOT354-1).
handbook, full pagewidth
2200
F
100
nF
220 nF
60 k
RL = 4
input
reference
voltage
40 dB
+
-
1
60 k
40 dB
-
+
9
5
4
6
non-inverting input
to pin 9
internal
1/2 VP
VP
power
ground
2
signal
ground
TDA1519C
3
8
7
standby switch
MGL494
to pin 1
2000 Mar 08
11
Philips Semiconductors
Product specification
22 W BTL or 2
11 W stereo power
amplifier
TDA1519C
Fig.8 Total quiescent current (I
q(tot)
) as a function of supply voltage (V
P
).
handbook, halfpage
0
20
60
30
40
50
MGR539
4
8
12
16
Iq(tot)
(mA)
VP (V)
Fig.9 Output power (P
o
) as a function of supply voltage (V
P
) for BTL application at R
L
=
4
; f
=
1 kHz.
handbook, halfpage
0
20
30
0
10
20
MGR540
4
8
12
16
Po
(W)
VP (V)
THD = 10%
0.5%
2000 Mar 08
12
Philips Semiconductors
Product specification
22 W BTL or 2
11 W stereo power
amplifier
TDA1519C
Fig.10 Total harmonic distortion (THD) as a function of output power (P
o
) for BTL application at R
L
= 4
;
f = 1 kHz.
handbook, halfpage
12
0
10
-
1
1
10
10
2
MGR541
4
8
THD
(%)
Po (W)
Fig.11 Total harmonic distortion (THD) as a function of operating frequency (f) for BTL application at R
L
= 4
;
P
o
= 1 W.
handbook, halfpage
0.6
0
10
10
2
10
3
10
4
MGR542
0.2
0.4
THD
(%)
f (Hz)
2000 Mar 08
13
Philips Semiconductors
Product specification
22 W BTL or 2
11 W stereo power
amplifier
TDA1519C
PACKAGE OUTLINES
UNIT
A
b
max.
b
p
2
c
D
(1)
E
(1)
Z
(1)
d
e
D
h
L
j
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
4.6
4.4
1.1
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
2.54
12.2
11.8
3.4
3.1
A
max.
1
2.0
E
h
6
2.00
1.45
2.1
1.8
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
17.2
16.5
SOT131-2
95-03-11
99-12-17
0
5
10 mm
scale
Q
0.25
w
0.03
x
D
L
A
E
c
A 2
Q
w
M
b
p
d
D
Z
e
x
h
1
9
Eh
non-concave
seating plane
1
b
j
SIL9P: plastic single in-line power package; 9 leads
SOT131-2
view B: mounting base side
B
2000 Mar 08
14
Philips Semiconductors
Product specification
22 W BTL or 2
11 W stereo power
amplifier
TDA1519C
UNIT
A
A1
A2
A3
bp
c
D
(1)
E
(1)
Z
(1)
d
e
Dh
Eh
Lp
L
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
4.9
4.2
0.35
0.05
4.6
4.4
0.25
0.75
0.60
24.0
23.6
0.48
0.38
10
20.0
19.6
12.2
11.8
2.54
3.4
2.8
2.1
1.9
6
3
0
2.00
1.45
3.4
3.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
7.4
6.6
SOT354-1
0
5
10 mm
scale
Q
j
0.15
w
x
y
D
c
A1
Q
heatsink
heatsink
A
Lp
(A3)
A2
0.03
0.25
w
M
b
p
d
Dh
Z
e
x
9
1
j
Eh
non-concave
98-10-08
99-12-17
SMS9P: plastic surface mounted single in-line power package; 9 leads
SOT354-1
L
E
y
2000 Mar 08
15
Philips Semiconductors
Product specification
22 W BTL or 2
11 W stereo power
amplifier
TDA1519C
UNIT
A4
(1)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
98-02-25
99-11-12
IEC
JEDEC
EIAJ
mm
+
0.12
-
0.02
3.5
0.35
DIMENSIONS (mm are the original dimensions)
Notes
1. Limits per individual lead.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT418-2
0
5
10 mm
scale
HSOP20: plastic, heatsink small outline package; 20 leads; low stand-off height
SOT418-2
A
max.
detail X
A2
3.5
3.2
D2
1.1
0.9
HE
14.5
13.9
Lp
1.1
0.8
Q
1.7
1.5
2.5
2.0
v
0.25
w
0.25
y
Z
8
0
0.07
x
0.03
D1
13.0
12.6
E1
6.2
5.8
E2
2.9
2.5
bp
c
0.32
0.23
e
1.27
D
(2)
16.0
15.8
E
(2)
11.1
10.9
0.53
0.40
A3
A4
A2
(A3)
Lp
A
Q
D
y
x
HE
E
c
v
M
A
X
A
bp
w
M
Z
D1
D2
E2
E1
e
20
11
1
10
pin 1 index
2000 Mar 08
16
Philips Semiconductors
Product specification
22 W BTL or 2
11 W stereo power
amplifier
TDA1519C
UNIT
A1
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-11-03
99-11-12
IEC
JEDEC
EIAJ
mm
0.3
0.1
3.6
0.35
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT397-1
0
5
10 mm
scale
HSOP20: plastic, heatsink small outline package; 20 leads
SOT397-1
A
max.
D
y
HE
A1 A4
A2
bp
(A3)
E
c
v
M
A
X
A
Lp
detail X
A
Q
w
M
Z
D1
D2
E2
E1
e
1
10
20
11
pin 1 index
A2
3.3
3.0
A4
0.1
0
D2
1.1
0.9
HE
14.5
13.9
Lp
1.1
0.8
Q
1.5
1.4
2.5
2.0
v
0.25
w
0.25
y
Z
8
0
0.1
D1
13.0
12.6
E1
6.2
5.8
E2
2.9
2.5
bp
c
0.32
0.23
e
1.27
D
(1)
16.0
15.8
E
(1)
11.1
10.9
0.53
0.40
A3
2000 Mar 08
17
Philips Semiconductors
Product specification
22 W BTL or 2
11 W stereo power
amplifier
TDA1519C
SOLDERING
Introduction
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"Data Handbook IC26; Integrated Circuit Packages"
(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mount components are mixed on
one printed-circuit board. However, wave soldering is not
always suitable for surface mount ICs, or for printed-circuit
boards with high population densities. In these situations
reflow soldering is often used.
Through-hole mount packages
S
OLDERING BY DIPPING OR BY SOLDER WAVE
The maximum permissible temperature of the solder is
260
C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
stg(max)
). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
M
ANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300
C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400
C, contact may be up to 5 seconds.
Surface mount packages
R
EFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
Typical reflow peak temperatures range from
215 to 250
C. The top-surface temperature of the
packages should preferable be kept below 230
C.
W
AVE SOLDERING
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
For packages with leads on two sides and a pitch (e):
larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
For packages with leads on four sides, the footprint must
be placed at a 45
angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250
C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
M
ANUAL SOLDERING
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300
C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320
C.
2000 Mar 08
18
Philips Semiconductors
Product specification
22 W BTL or 2
11 W stereo power
amplifier
TDA1519C
Suitability of IC packages for wave, reflow and dipping soldering methods
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
"Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods".
2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
4. If wave soldering is considered, then the package must be placed at a 45
angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
MOUNTING
PACKAGE
SOLDERING METHOD
WAVE
REFLOW
(1)
DIPPING
Through-hole mount DBS, DIP, HDIP, SDIP, SIL
suitable
(2)
-
suitable
Surface mount
BGA, LFBGA, SQFP, TFBGA
not suitable
suitable
-
HBCC, HLQFP, HSQFP, HSOP, HTQFP,
HTSSOP, SMS
not suitable
(3)
suitable
-
PLCC
(4)
, SO, SOJ
suitable
suitable
-
LQFP, QFP, TQFP
not recommended
(4)(5)
suitable
-
SSOP, TSSOP, VSO
not recommended
(6)
suitable
-
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
2000 Mar 08
19
Philips Semiconductors
Product specification
22 W BTL or 2
11 W stereo power
amplifier
TDA1519C
NOTES
Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000
69
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Printed in The Netherlands
753503/02/pp
20
Date of release:
2000 Mar 08
Document order number:
9397 750 06633
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