DATA SHEET
Preliminary specification
Supersedes data of 1997 Jun 11
File under Integrated Circuits, IC01
1997 Aug 14
INTEGRATED CIRCUITS
TDA1561Q
2
23 W high efficiency car radio
power amplifier
1997 Aug 14
2
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
FEATURES
Low dissipation due to switching from Single-Ended
(SE) to Bridge-Tied Load (BTL) mode
High Common Mode Rejection Ratio (CMRR)
Mute/standby/operating/SE-only (mode select pin)
Zero crossing mute and standby circuit
Load dump protection circuit
Short-circuit safe to ground, to supply voltage and
across load
Loudspeaker protection circuit
Device switches to single-ended operation at excessive
junction temperatures.
GENERAL DESCRIPTION
The TDA1561Q is a monolithic power amplifier in a 13 lead
single-in-line (SIL) plastic power package. It contains two
identical 23 W amplifiers. The dissipation is minimized by
switching from SE to BTL mode, only when a higher output
voltage swing is needed. The device is primarily
developed for car radio applications.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
P
supply voltage
DC biased
6.0
14.4
18
V
non operating
-
-
30
V
load dump
-
-
50
V
I
ORM
repetitive peak output current
-
-
4
A
I
q(tot)
total quiescent current
R
L
=
-
95
150
mA
I
stb
standby current
-
1
50
A
Z
i
input impedance
-
60
-
k
P
o
output power
RL = 4
; EIAJ
-
36
-
W
THD 10%
21
23
-
W
G
v
voltage gain
31
32
33
dB
CMRR
common mode rejection ratio
f = 1 kHz; R
s
= 0
-
80
-
dB
SVRR
supply voltage ripple rejection
f = 1 kHz; R
s
= 0
45
55
-
dB
V
O
DC output offset voltage
-
-
150
mV
cs
channel separation
R
s
= 0 k
40
60
-
dB
G
v
channel unbalance
-
-
1
dB
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA1561Q
DBS13P
plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm)
SOT141-6
1997 Aug 14
3
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
MLD214
REFERENCE
SOURCES
MUTE/STANDBY
THERMAL/
SHORT-CIRCUIT
PROTECTION
HIGHER
TEMPERATURE
BTL DISABLE
0.5VP
MUTE
R
MUTE
R
7
VP
12
3
13
2
1
IN1
IN2
CIN
MODE
1/2R
HV
4
GND1
10
GND2
6
5
11
9
8
OUT2
OUT2
OUT1
OUT1
C
TDA1561Q
P
11
1997 Aug 14
4
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
PINNING
SYMBOL
PIN
DESCRIPTION
IN1
1
input 1
HV
P
2
half supply voltage control input
MODE
3
mute/standby/operating/SE-only
GND1
4
ground 1
OUT1
5
inverting output 1
OUT1
6
non-inverting output 1
V
P
7
supply voltage
OUT2
8
inverting output 2
OUT2
9
non-inverting output 2
GND2
10
ground 2
C
11
11
electrolytic capacitor for
single-ended (SE) mode
CIN
12
common input
IN2
13
input 2
Fig.2 Pin configuration.
handbook, halfpage
MLD215
1
2
3
4
5
6
7
8
9
10
11
12
13
TDA1561Q
IN1
HV
GND1
OUT1
V
MODE
OUT1
OUT2
11
C
CIN
IN2
GND2
OUT2
P
P
1997 Aug 14
5
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
FUNCTIONAL DESCRIPTION
The TDA1561Q contains two identical amplifiers with
differential inputs. At low output power (up to output
amplitudes of 3 V (RMS) at V
P
= 14.4 V), the device
operates as a normal SE amplifier. When a larger output
voltage swing is needed, the circuit switches internally to
BTL operation.
With a sine wave input signal the dissipation of a
conventional BTL amplifier up to 2 W output power is more
than twice the dissipation of the TDA1561Q (see Fig.9).
In normal use, when the amplifier is driven with music-like
signals, the high (BTL) output power is only needed for a
small percentage of time. Under the assumption that a
music signal has a normal (Gaussian) amplitude
distribution, the dissipation of a conventional BTL amplifier
with the same output power is approximately 70% higher
(see Fig.10).
The heatsink has to be designed for use with music
signals. With such a heatsink, the thermal protection will
disable the BTL mode when the junction temperature
exceeds 145
C. In this case the output power is limited to
5 W per amplifier.
The gain of each amplifier is internally fixed at 32 dB. With
the MODE pin, the device can be switched to the following
modes:
Standby with low standby current (<50
A)
Mute condition, DC adjusted
On, operation
SE-only, operation (BTL disabled).
The device is fully protected against short-circuiting of the
output pins to ground and to the supply voltage. It is also
protected against short-circuiting the loudspeaker and
high junction temperatures. In the event of a permanent
short-circuit condition to ground or the supply voltage, the
output stage will be switched off causing a low dissipation.
With permanent short-circuiting of the loudspeaker, the
output stage will be repeatedly switched on and off.
The duty cycle in the `on' condition is low enough to
prevent excessive dissipation.
To avoid plops during switching from `mute' to `on' or from
`on' to `mute/standby' while an input signal is present, a
built-in zero-crossing detector allows only switching at
zero input voltage. However, when the supply voltage
drops below 6 V (e.g. engine start), the circuit mutes
immediately avoiding clicks coming from electronic
circuitry preceding the power amplifier.
The voltage of the SE electrolytic capacitor (pin 11) is
always kept at 0.5V
P
by means of a voltage buffer (see
Fig.1). The value of this capacitor has an important
influence on the output power in SE mode, especially at
low signal frequencies, a high value is recommended to
minimize dissipation at low frequencies.
1997 Aug 14
6
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. The value of R
th(c-h)
depends on the application (see Fig.3).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
P
supply voltage
operating
-
18
V
non operating
-
30
V
load dump; t
r
> 2.5 ms
-
50
V
V
P(sc)
short-circuit safe voltage
-
18
V
V
rp
reverse polarity voltage
-
6
V
I
OSM
non-repetitive peak output current
-
6
A
I
ORM
repetitive peak output current
-
4
A
P
tot
total power dissipation
-
60
W
T
stg
storage temperature
-
55
+150
C
T
vj
virtual junction temperature
-
150
C
T
amb
operating ambient temperature
-
40
-
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-c)
thermal resistance from junction to case
see note 1
1.3
K/W
R
th(j-a)
thermal resistance from junction to ambient
40
K/W
1997 Aug 14
7
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
Heatsink design
There are two parameters that determine the size of the
heatsink. The first is the rating for the virtual junction
temperature and the second is the ambient temperature at
which the amplifier must still deliver its full power in the
BTL mode.
With a conventional BTL amplifier, the maximum power
dissipation with a music-like signal (at each amplifier) will
be approximately two times 5 W. At a virtual junction
temperature of 150
C and a maximum ambient
temperature of 60
C, R
th(vj-c)
= 1.3 K/W and
R
th(c-h)
= 0.2 K/W, the thermal resistance of the heatsink
should be:
Compared to a conventional BTL amplifier, the TDA1561Q
has a higher efficiency. The thermal resistance of the
heatsink should be:
150
60
2
5
----------------------
1.3
0.2
7.5 K/W
=
1.7
150
60
2
5
----------------------
1.3
0.2
13.8 K/W
=
Fig.3 Thermal equivalent resistance network.
handbook, halfpage
3.6 K/W
0.6 K/W
3.6 K/W
virtual junction
OUT 1
OUT 1
case
3.6 K/W
0.6 K/W
3.6 K/W
OUT 2
OUT 2
MGC424
0.1 K/W
1997 Aug 14
8
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
DC CHARACTERISTICS
V
P
= 14.4 V; T
amb
= 25
C; measured in Fig.6; unless otherwise specified.
Note
1. The circuit is DC biased at V
P
= 6 to 18 V and AC operating at V
P
= 8 to 18 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
V
P
supply voltage
note 1
6.0
14.4
18.0
V
I
q
quiescent current
R
L
=
-
95
150
mA
I
stb
standby current
-
1
50
A
V
C
average electrolytic capacitor
voltage at pin 11
-
7.1
-
V
V
O
DC output offset voltage
on state
-
-
150
mV
mute state
-
-
50
mV
Mode select switch (see Fig.4)
V
ms
voltage at mode select pin
(pin 3)
standby condition
0
-
1
V
mute condition
2
-
3
V
on condition (SE/BTL mode)
4
-
5.5
V
on condition (SE mode only)
7.5
-
V
P
V
I
ms
switch current through pin 3
V
ms
= 5 V
-
-
40
A
Protection
T
dis
BTL disable temperature
-
145
-
C
Fig.4 Switching levels of mode select switch.
handbook, halfpage
,,,,,,,
,,,,,,,
,,,,,,,
0
MLD216
V
1
2
3
4
5
6
7
8
P
SE Only
,,,,,,,
,,,,,,,
SE/BTL
,,,,,,,
,,,,,,,
,,,,,,,
Standby
Mute
1997 Aug 14
9
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
AC CHARACTERISTICS
V
P
= 14.4 V; R
L
= 4
; C
11
= 1000
F; f = 1 kHz; T
amb
= 25
C; measured in Fig.6; unless otherwise specified.
Notes
1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz.
2. Frequency response externally fixed (input capacitors determine low frequency roll-off).
3. The SE to BTL switch voltage level depends on V
P
.
4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage is independent of R
s
(see Fig.6)(V
i
= 0 V).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
P
o
output power
THD = 1%
15
18
-
W
THD = 10%
21
23
-
W
EIAJ
-
36
-
W
V
P
= 13.2 V; THD = 0.5%
-
14
-
W
V
P
= 13.2 V; THD = 10%
-
20
-
W
THD
total harmonic distortion
P
o
= 1 W; f = 1 kHz; note 1
-
0.1
-
%
P
d
dissipated power
see Figs 9 and 10
W
B
p
power bandwidth
THD = 1%; P
o
=
-
1 dB
with respect to 15 W
-
20 to
15 000
-
Hz
f
ro(l)
low frequency roll-off
-
1 dB; note 2
-
25
-
Hz
f
ro(h)
high frequency roll-off
-
1 dB
130
-
-
kHz
G
v
closed loop voltage gain
31
32
33
dB
SVRR
supply voltage ripple rejection
R
s
= 0
; V
ripple
= 2 V (p-p)
on; f = 1 kHz
45
60
-
dB
mute; f = 1 kHz
-
90
-
dB
standby; f = 100 Hz to 10 kHz 80
-
-
dB
CMRR
common mode rejection ratio
R
s
= 0
; f = 1 kHz
-
80
-
dB
Z
i
input impedance
45
60
75
k
Z
i
mismatch in input impedance
-
1
-
%
V
SE-BTL
SE to BTL switch voltage level
note 3
-
3
-
V
V
out
output voltage-mute (RMS value)
V
i
= 1 V (RMS)
-
50
100
V
V
n(o)
noise output voltage
on; R
s
= 0
; note 4
-
160
300
V
on; R
s
= 10 k
; note 4
-
170
-
V
mute; note 5
-
20
-
V
cs
channel separation
R
s
= 0
40
60
-
dB
G
v
channel unbalance
-
-
1
dB
1997 Aug 14
10
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
TEST AND APPLICATION INFORMATION
Fig.5 Test diagram.
handbook, full pagewidth
220 nF
470 nF
4
8
9
11
5
6
7
3
1
2
12
13
10
220 nF
4
3.9
1000
F
(16 V)
100
nF
3.9
10
nF
0.5VP
0.5Rs
MLD223
TDA1561Q
4
3.9
10 nF
3.9
100 nF
input 2
input 1
Rs
Rs
1000
F
16 V
220 nF
IN1
HVP
GND1
OUT1
VP
MODE
OUT1
OUT2
C11
CIN
IN2
GND2
OUT2
1997 Aug 14
11
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
Fig.6 Application diagram.
handbook, full pagewidth
220 nF
100 nF
2 x 220 nF
4
8
9
11
5
6
7
3
1
2
12
13
power ground
signal ground
10
220 nF
1000
F
16 V
100 nF
4
3.9
1000
F
(16 V)
10
nF
3.9
100
nF
0.5VP
MLD213
TDA1561Q
4
3.9
10 nF
3.9
100 nF
IN1
HVP
GND1
OUT1
VP
MODE
OUT1
OUT2
C11
CIN
IN2
GND2
OUT2
(1)
Rs
Rs
0.5Rs
Connect Boucherot filter to pin 4 respectively pin 10 with the shortest possible connection.
1997 Aug 14
12
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
handbook, full pagewidth
MGK182
Mode
select
gnd
m
s
s
Vp
GND
In1
In2
sgnd
Cool Power
m
Out 2
Out 1
TDA1561Q
4
220 nF
86.36
43.18
Fig.7 PCB layout (component side) for the application of Fig.6.
Dimensions in mm.
1997 Aug 14
13
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
handbook, full pagewidth
MGK183
Mode
gnd
m
s
s
Vp
GND
In2
In1
sgnd
m
Out1
Out2
86.36
43.18
Fig.8 PCB layout (soldering side) for the application of Fig.6.
Dimensions in mm.
1997 Aug 14
14
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
INTERNAL PIN CONFIGURATIONS
PIN
NAME
EQUIVALENT CIRCUIT
1,12,13
IN1, CIN, IN2
2
HV
P
3
MODE
h
pin 1
pin 12
pin 13
VP
MLD217
handbook, halfpage
MLD218
pin 2
handbook, halfpage
MLD221
pin 3
V
P
1997 Aug 14
15
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
5, 9
OUT1, OUT2
6, 8
OUT1, OUT2
11
C
11
PIN
NAME
EQUIVALENT CIRCUIT
handbook, halfpage
MLD220
V
P
pins 5, 9
handbook, halfpage
MLD219
V
P
pins 6, 8
MLD222
pin 11
1997 Aug 14
16
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
ADDITIONAL APPLICATION INFORMATION
Fig.9 Dissipation; sine wave driven.
handbook, halfpage
0
10
Po (W)
25
0
5
10
15
20
2
Pd
(W)
4
6
8
MBH692
(1)
(2)
Input signal 1 kHz, sinusoidal; V
P
= 14.4 V.
(1) For a conventional BTL amplifier.
(2) For TDA1561Q.
Fig.10 Dissipation; pink noise through IEC-268
filter.
handbook, halfpage
0
10
Po (W)
25
0
5
10
15
20
2
Pd
(W)
4
6
8
MBH693
(1)
(2)
(1) For a conventional BTL amplifier.
(2) For TDA1561Q.
Fig.11 IEC-268 filter.
430
input
output
330
3.3
k
3.3
k
10
k
91
nF
68
nF
470 nF
2.2
F
2.2
F
MGC428
1997 Aug 14
17
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
handbook, full pagewidth
220 nF
pink
noise
100 nF
2
220 nF
4
8
9
11
5
6
7
3
1
2
12
13
10
220 nF
4
3.9
1000
F
(16 V)
10
nF
3.9
100
nF
1/2VP
on condition
MGC427
TDA1561Q
4
3.9
10 nF
3.9
100 nF
IEC-268
FILTER
IN1
HVP
GND1
OUT1
VP
MODE
OUT1
OUT2
C11
CIN
IN2
GND2
OUT2
Fig.12 Test and application diagram for dissipation measurements with a music-like signal (pink noise).
Fig.13 DC output voltage as a function of V
P
.
handbook, halfpage
0
8
24
VP (V)
VO
(V)
12
0
4
8
16
MBH694
V
ms
= 5 V.
Fig.14 Quiescent current as a function of V
P
.
handbook, halfpage
0
8
24
VP (V)
Iq
(mA)
125
0
25
50
75
100
16
MBH695
V
ms
= 5 V; R
I
=
.
1997 Aug 14
18
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
Fig.15 I
P
as a function of V
ms
(pin 3).
handbook, halfpage
0
2
8
6
off
mute
VMODE (V)
IP
(mA)
160
0
40
80
120
4
MBH696
SE/BTL
SE only
V
P
= 14.4 V; V
in
= 0 mV; R
I
=
.
Fig.16 I
ms
as a function of V
ms
.
handbook, halfpage
0
2
8
6
VMODE (V)
IMODE
(
A)
80
64
0
16
32
48
4
MBH697
Fig.17 Output power as a function of V
P
.
handbook, halfpage
8.4
10.8
18
15.6
(3)
(2)
(1)
VP (V)
Po
(W)
60
0
20
40
13.2
MBH698
Both channels driven.
(1) EIAJ.
(2) THD = 10%.
(3) THD = 1%.
Fig.18 THD + noise as a function of P
o
.
handbook, halfpage
10
2
10
1
10
-
1
10
-
2
MBH699
10
-
2
10
-
1
1
THD
+
N
(%)
10
Po (W)
10
2
(1)
(2)
(3)
(1) f = 10 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
1997 Aug 14
19
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
Fig.19 THD + noise as a function of frequency.
handbook, halfpage
10
1
10
-
1
10
-
2
MBH700
10
10
2
10
3
10
4
f (Hz)
THD
+
N
(%)
10
5
(1)
(2)
(1) P
o
= 10 W.
(2) P
o
= 1 W.
Fig.20 Power bandwidth at THD = 1%.
handbook, halfpage
16
18
20
14
12
10
MBH701
10
10
2
10
3
10
4
f (Hz)
Bp
(W)
10
5
(1)
(2)
(1) For OUT2.
(2) For OUT1.
Fig.21 Gain as a function of frequency.
handbook, halfpage
32
34
36
30
28
26
MBH702
10
10
2
10
3
10
4
f (Hz)
Gv
(dB)
10
6
10
5
V
in
= 50 mV.
Fig.22 SVRR as a function of frequency.
handbook, halfpage
-
120
-
100
-
80
-
60
-
40
-
20
MBH703
10
10
2
10
3
10
4
f (Hz)
SVRR
(dB)
10
5
on
mute
off
V
ripple(p-p)
= 2 V.
1997 Aug 14
20
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
Fig.23 Channel separation as a function of
frequency.
handbook, halfpage
-
100
-
60
-
40
-
20
0
MBH704
10
10
2
10
3
10
4
f (Hz)
cs
(dB)
10
5
(2)
(1)
(1) P
o
= 1 W.
(2) P
o
= 10 W.
Fig.24 Mode select circuit.
handbook, halfpage
MBH690
47
F
10 k
MODE
5 V/40
A
1997 Aug 14
21
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
Fig.25 Output waveforms.
handbook, full pagewidth
MBH691
0
1
2
t (ms)
3
1/2 VP
1/2 VP
0
-
VP
VP
VP
0
VP
Vload
(1)
(2)
(3)
Vmaster
Vslave
0
See Fig.5:
V
load
= V
6
-
V
5
or V
8
-
V
9
V
master
= V
6
or V
8
V
slave
= V
5
or V
9
1997 Aug 14
22
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
PACKAGE OUTLINE
UNIT
A
e
1
A
2
b
p
c
D
(1)
E
(1)
Z
(1)
d
e
D
h
L
L
3
m
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
17.0
15.5
4.6
4.2
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
3.4
v
0.8
12.2
11.8
1.7
e
2
5.08
2.4
1.6
E
h
6
2.00
1.45
2.1
1.8
3.4
3.1
4.3
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
12.4
11.0
SOT141-6
0
5
10 mm
scale
Q
j
0.25
w
0.03
x
D
L
E
A
c
A
2
m
L
3
Q
w
M
b
p
1
d
D
Z
e
2
e
e
x
h
1
13
j
Eh
non-concave
view B: mounting base side
95-03-11
97-12-16
DBS13P: plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm)
SOT141-6
v
M
B
1997 Aug 14
23
Philips Semiconductors
Preliminary specification
2
23 W high efficiency car radio power
amplifier
TDA1561Q
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"IC Package Databook" (order code 9398 652 90011).
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260
C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
stg max
). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300
C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400
C, contact may be up to 5 seconds.
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
547027/1200/05/pp24
Date of release: 1997 Aug 14
Document order number:
9397 750 02732
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