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Электронный компонент: TDA1562Q/N2/S10

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DATA SHEET
Preliminary specification
Supersedes data of 1998 Apr 07
2003 Feb 12
INTEGRATED CIRCUITS
TDA1562Q; TDA1562ST;
TDA1562SD
70 W high efficiency power
amplifier with diagnostic facility
2003 Feb 12
2
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
FEATURES
Very high output power, operating from a single low
supply voltage
Low power dissipation, when used for music signals
Switches to low output power at too high case
temperatures
Few external components
Fixed gain
Differential inputs with high common mode rejection
Mode select pin (on, mute and standby)
Status I/O pin (class-H, class-B and fast mute)
All switching levels with hysteresis
Diagnostic pin with information about:
Dynamic Distortion Detector (DDD)
Any short-circuit at outputs
Open load detector
Temperature protection.
No switch-on or switch-off plops
Fast mute on supply voltage drops
Quick start option (e.g. car-telephony/navigation)
Low (delta) offset voltage at the outputs
Load dump protection
Short-circuit safe to ground, supply voltage and across
the load
Low power dissipation in any short-circuit condition
Protected against electrostatic discharge
Thermally protected
Flexible leads.
GENERAL DESCRIPTION
The TDA1562 is a monolithic integrated 70 W/4
Bridge-Tied Load (BTL) class-H high efficiency power
amplifier in a 17 lead DIL-bent-SIL plastic power package.
The device can be used for car audio systems (e.g.
car radios and boosters) as well as mains fed applications
(e.g. midi/mini audio combinations and TV sound).
QUICK REFERENCE DATA
V
P
= 14.4 V; R
L
= 4
; R
s
= 0
; f = 1 kHz; T
amb
= 25
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
P
supply voltage
operating; note 1
8
14.4
18
V
non-operating
-
-
30
V
load dump
-
-
45
V
I
q
quiescent current
on and mute; R
L
= open
circuit
-
110
150
mA
I
stb
standby current
standby
-
3
50
A
V
OO
output offset voltage
on and mute
-
-
100
mV
V
OO
delta output offset voltage
on
mute
-
-
30
mV
G
v
voltage gain
25
26
27
dB
Z
i(dif)
differential input impedance
90
150
-
k
P
o
output power
THD = 0.5%
45
55
-
W
THD = 10%
60
70
-
W
THD
total harmonic distortion
P
o
= 1 W
-
0.03
-
%
P
o
= 20 W
-
0.06
-
%
DDD active
-
2.1
-
%
2003 Feb 12
3
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
Note
1. When operating at V
P
> 16 V, the output power must be limited to 85 W at THD = 10% (or minimum load is 6
).
ORDERING INFORMATION
SVRR
supply voltage ripple rejection
on and mute
55
63
-
dB
CMRR
common mode rejection ratio
on
56
80
-
dB
ISRR
input signal rejection ratio
mute
80
100
-
dB
V
n(o)
noise output voltage
on
-
100
150
V
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA1562Q
DBS17P
plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
TDA1562Q/S10
DBS17P
plastic DIL-bent-SIL power package; 17 leads (lead length 7.7 mm)
SOT243-3
TDA1562ST
RDBS17P
plastic rectangular-DIL-bent-SIL power package; 17 leads (row
spacing 2.54 mm)
SOT577-2
TDA1562SD
RDBS17P
plastic rectangular-DIL-bent-SIL (reverse bent) power package;
17 leads (row spacing 2.54 mm)
SOT668-2
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
2003 Feb 12
4
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
POWER-
STAGE
PREAMP
STAT
VP*
VP*
75
k
-
+
C1
+
C1
-
FEEDBACK
CIRCUIT
TDA1562
POWER-
STAGE
CLASS-B
CLASS-H
FAST MUTE
TEMPERATURE
SENSOR
LOAD DUMP
PROTECTION
STANDBY
MUTE
ON
LOAD
DETECTOR
DYNAMIC
DISTORTION
DETECTOR
DIAGNOSTIC
INTERFACE
TEMPERATURE
PROTECTION
CURRENT
PROTECTION
LIFT-SUPPLY
LIFT-SUPPLY
disable
disable
16
MODE
4
1
IN
+
3
5
75
k
15 k
reference
voltage
PREAMP
-
+
2
IN
-
14
Vref
17
SGND
C2
+
C2
-
OUT
-
15
13
6
PGND1
PGND2
MGL264
12
11
DIAG
OUT
+
7
8
9
10
VP2
VP1
2003 Feb 12
5
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
PINNING
SYMBOL
PIN
DESCRIPTION
IN+
1
signal input (positive)
IN
-
2
signal input (negative)
C1
-
3
negative terminal of lift electrolytic
capacitor 1
MODE
4
mode select input
C1+
5
positive terminal of lift electrolytic
capacitor 1
PGND1
6
power ground 1
OUT+
7
positive output
DIAG
8
diagnostic output (open-collector)
V
P1
9
supply voltage 1
V
P2
10
supply voltage 2
OUT
-
11
negative output
PGND2
12
power ground 2
C2+
13
positive terminal of lift electrolytic
capacitor 2
V
ref
14
internal reference voltage
C2
-
15
negative terminal of lift electrolytic
capacitor 2
STAT
16
status I/O
SGND
17
signal ground
Fig.2 Pin configuration.
handbook, halfpage
TDA1562Q
TDA1562ST
TDA1562SD
MGL263
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
IN
+
IN
-
C1
-
MODE
C1
+
PGND1
OUT
+
DIAG
VP1
VP2
OUT
-
PGND2
C2
+
Vref
C2
-
STAT
SGND
2003 Feb 12
6
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
FUNCTIONAL DESCRIPTION
The TDA1562 contains a mono class-H BTL output power
amplifier. At low output power, up to 18 W, the device
operates as a normal BTL amplifier. When a larger output
voltage swing is required, the internal supply voltage is
lifted by means of the external electrolytic capacitors. Due
to this momentarily higher supply voltage the obtainable
output power is 70 W.
In normal use, when the output is driven with music-like
signals, the high output power is only needed during a
small percentage of time. Under the assumption that a
music signal has a normal (Gaussian) amplitude
distribution, the reduction in dissipation is about 50% when
compared to a class-B output amplifier with the same
output power. The heatsink should be designed for use
with music signals. If the case temperature exceeds
120
C the device will switch back from class-H to class-B
operation. The high power supply voltage is then disabled
and the output power is limited to 20 W.
When the supply voltage drops below the minimum
operating level, the amplifier will be muted immediately.
Mode select input (pin MODE)
This pin has 3 modes:
1. LOW for standby: the complete circuit is switched off,
the supply current is very low
2. MID for mute: the circuit is switched on, but the input
signal is suppressed
3. HIGH for on: normal operation, the input signal is
amplified by 26 dB.
When the circuit is switched from mute to on or vice versa
the actual switching takes place at a zero crossing of the
input signal. The circuit contains a quick start option, i.e.
when it is switched directly from standby to on, the
amplifier is fully operational within 50 ms (important for
applications like car telephony and car navigation).
Status I/O (pin STAT)
I
NPUT
This input has 3 possibilities:
1. LOW for fast mute: the circuit remains switched on, but
the input signal is suppressed
2. MID for class-B: the circuit operates as class-B
amplifier, the high power supply voltage is disabled,
independent of the case temperature
3. HIGH for class-H: the circuit operates as class-H
amplifier, the high power supply voltage is enabled,
independent of the case temperature.
When the circuit is switched from fast mute to class-B/H or
vice versa the switching is immediately carried out. When
the circuit is switched from class-B to class-H or vice versa
the actual switching takes place at a zero crossing of the
input signal.
O
UTPUT
This output has 3 possibilities:
1. LOW for mute: acknowledge of muted amplifier
2. MID for class-B: the circuit operates as class-B
amplifier, the high power supply voltage is disabled,
caused by the case temperature T
c
> 120
C
3. HIGH for class-H: the circuit operates as class-H
amplifier, the high power supply voltage is enabled,
because the case temperature T
c
< 120
C.
When the circuit is switched from class-B to class-H or vice
versa the actual switching takes place at a zero crossing
of the input signal.
The status I/O pins of maximum 8 devices may be tied
together for synchronizing purposes.
2003 Feb 12
7
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
Fig.3 Switching characteristics.
handbook, full pagewidth
on
mute
0
supply
voltage
reference
voltage
mode select
input
status I/O
input
HIGH
MID
LOW
HIGH
MID
class-H (Tc
<
120
C)
class-B (Tc
>
120
C)
LOW
status I/O
output
HIGH
MID
LOW
Vref
VRT
0
output voltage
across load
0
zero crossing change
class-B/H operation
zero crossing mute
function
fast mute
function
quick start
mute
supply mute
function
MGL272
2003 Feb 12
8
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
Diagnostic output (pin DIAG)
D
YNAMIC
D
ISTORTION
D
ETECTOR
(DDD)
At the onset of clipping of the output stages, the DDD
becomes active. This information can be used to drive a
sound processor or DC-volume control to attenuate the
input signal and so limit the distortion.
S
HORT
-
CIRCUIT PROTECTION
When a short-circuit occurs at the outputs to ground or to
the supply voltage, the output stages are switched off.
They will be switched on again approximately 20 ms after
removing the short-circuit. During this short-circuit
condition the diagnostic output is continuously LOW.
When a short-circuit occurs across the load, the output
stages are switched off during approximately 20 ms. After
that time is checked during approximately 50
s whether
the short-circuit is still present. During this short-circuit
condition the diagnostic output is LOW for 20 ms and
HIGH for 50
s. The power dissipation in any short-circuit
condition is very low.
T
EMPERATURE DETECTION
Just before the temperature protection becomes active the
diagnostic output becomes continuously LOW.
L
OAD DETECTION
Directly after the circuit is switched from standby to mute
or on, a built-in detection circuit checks whether a load is
present. The results of this check can be detected at the
diagnostic output, by switching the mode select input in the
mute mode.
Since the diagnostic output is an open-collector output,
more devices can be connected.
Fig.4 Diagnostic information.
handbook, full pagewidth
HIGH
MID
LOW
mode select
input
diagnostic
output
output voltage
across load
0
HIGH
LOW
no load
clipping signal
short-circuit to
supply or ground
short-circuit
across load
t
MGL265
2003 Feb 12
9
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
Fig.5 Behaviour as a function of temperature.
handbook, full pagewidth
class-H
maximum output
voltage swing
diagnostic
output
status I/O: high
status I/O: open
MGL266
class-B
0
HIGH
LOW
status I/O
output
HIGH
MID
LOW
120
145
Tj (
C)
150
160
100
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. When operating at V
P
> 16 V, the output power must be limited to 85 W at THD = 10% (or minimum load is 6
).
2. T
j
is a theoretical temperature which is based on a simplified representation of the thermal behaviour of the device.
T
j
= T
c
+ P
R
th(j-c)
, where R
th(j-c)
is a fixed value to be used for the calculation of T
j
. The rating for T
j
limits the
allowable combinations of power dissipation P and case temperature T
c
(in accordance with IEC 60747-1).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
P
supply voltage
operating; note 1
-
18
V
non-operating
-
30
V
load dump; t
r
> 2.5 ms; t = 50 ms
-
45
V
I
OSM
non-repetitive peak output current
-
10
A
I
ORM
repetitive peak output current
-
8
A
V
sc
short-circuit safe voltage
-
18
V
T
stg
storage temperature
-
55
+150
C
T
amb
ambient temperature
-
40
-
C
T
j
junction temperature
note 2
-
150
C
P
tot
total power dissipation
-
60
W
2003 Feb 12
10
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
QUALITY SPECIFICATION
Quality in accordance with
"SNW-FQ-611D", if this type is used as an audio amplifier.
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
V
P
= 14.4 V; R
L
= 4
; T
amb
= 25
C; measurements in accordance with Fig.9; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-c)
thermal resistance from junction to case
1.5
K/W
R
th(j-a)
thermal resistance from junction to ambient
in free air
40
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies V
P1
and V
P2
V
P
supply voltage
8
14.4
18
V
V
P(th+)
supply threshold voltage
mute
on
7
-
9
V
V
P(th
-)
supply threshold voltage
on
mute
7
-
9
V
V
P(H1)
hysteresis
(V
th+
-
V
th
-
)
-
200
-
mV
I
q
quiescent current
on and mute;
R
L
= open circuit
-
110
150
mA
I
stb
standby current
standby
-
3
50
A
Amplifier outputs OUT+ and OUT
-
V
O
output voltage
on and mute
-
6.5
-
V
V
OO
output offset voltage
on and mute
-
-
100
mV
V
OO
delta output offset voltage
on
mute
-
-
30
mV
Mode select input MODE
V
I
input voltage
0
-
V
P
V
I
I
input current
V
MODE
= 14.4 V
-
15
20
A
V
th1+
threshold voltage 1+
standby
mute
1
-
2.2
V
V
th1
-
threshold voltage 1
-
mute
standby
0.9
-
2
V
V
msH1
hysteresis
(V
th1+
-
V
th1
-
)
-
200
-
mV
V
th2+
threshold voltage 2+
mute
on
3.3
-
4.2
V
V
th2
-
threshold voltage 2
-
on
mute
3.3
-
4
V
V
msH2
hysteresis
(V
th2+
-
V
th2
-
)
-
200
-
mV
Status I/O STAT
P
IN
STAT
AS INPUT
V
st
input voltage
0
-
V
P
V
I
st(H)
HIGH-level input current
V
STAT
= 14.4 V
-
3.5
4.5
mA
I
st(L)
LOW-level input current
V
STAT
= 0 V
-
-
350
-
400
A
V
th1+
threshold voltage 1+
fast mute
class-B
-
-
2
V
V
th1
-
threshold voltage 1
-
class-B
fast mute 1
-
-
V
V
stH1
hysteresis
(V
th1+
-
V
th1
-
)
-
200
-
mV
2003 Feb 12
11
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
V
th2+
threshold voltage 2+
class-B
class-H
-
-
4.2
V
V
th2
-
threshold voltage 2
-
class-H
class-B
3.3
-
-
V
V
stH2
hysteresis
(V
th2+
-
V
th1
-
)
-
200
-
mV
P
IN
STAT
AS OUTPUT
I
st(mute)
mute acknowledge sink current
2.2
-
-
mA
V
st(mute)
mute acknowledge output voltage
I
st
= 2.2 mA
-
-
0.5
V
I
st(clB)
class-B operation output current
15
-
-
A
V
st(clB)
class-B operation output voltage
I
st
= 15
A
2.0
-
3.0
V
I
st(clH)
class-H operation source current
-
140
-
-
A
V
st(clH)
class-H operation output voltage
I
st
=
-
140
A
V
P
-
2.5
-
-
V
T
c(th)
threshold case temperature sensor
-
120
-
C
Diagnostic output DIAG
V
DIAG
output voltage
active LOW
-
-
0.6
V
R
L
load resistance for open load detection
100
-
-
T
j(th)
threshold junction temperature sensor
-
145
-
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Fig.6 Supply voltage transfer characteristic.
handbook, full pagewidth
VPH1
Vth
-
Vth
+
MGL267
fast mute
on
VP
2003 Feb 12
12
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
Fig.7 Mode select transfer characteristic.
handbook, full pagewidth
VmsH1
VmsH2
Vms
Vth1
-
Vth1
+
Vth2
-
Vth2
+
MGL268
standby
mute
on
Fig.8 Status I/O transfer characteristic.
handbook, full pagewidth
VstH1
VstH2
Vth1
-
Vth1
+
Vth2
-
Vth2
+
MGL269
fast mute
class-B
class-H
Vst
2003 Feb 12
13
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
AC CHARACTERISTICS
V
P
= 14.4 V; R
L
= 4
; R
s
= 0
; f = 1 kHz; T
amb
= 25
C; measurements in accordance with Fig.9; unless otherwise
specified.
Notes
1. The low frequency power roll-off is determined by the value of the electrolytic lift capacitors.
2. The low frequency gain roll-off is determined by the value of the input coupling capacitors.
3. Supply voltage ripple rejection is measured across R
L
; ripple voltage V
ripple(max)
= 2 V (p-p).
4. Common mode rejection ratio is measured across R
L
; common mode voltage V
cm(max)
= 2 V (p-p).
CMMR (dB) = differential gain (G
v
) + common mode attenuation (
cm
). Test set-up according to Fig.10; mismatch of
input coupling capacitors excluded.
5. Input signal rejection ratio is measured across R
L
; input voltage V
i(max)
= 2 V (p-p). ISSR (dB) = different gain
(G
v
) + mute attenuation (
m
).
6. Noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz.
7. Noise output voltage is independent of source impedance R
s
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
P
o
output power
class-B; THD = 10%
16
19
-
W
class-H; THD = 10%
60
70
-
W
class-H; THD = 0.5%
45
55
-
W
f
ro(h)(P)
high frequency power roll-off P
o
(
-
1 dB); THD = 0.5%;
note 1
-
20
-
kHz
THD
total harmonic distortion
P
o
= 1 W
-
0.03
-
%
P
o
= 20 W
-
0.06
-
%
DDD active
-
2.1
-
%
G
v
voltage gain
25
26
27
dB
f
ro(h)(G)
high frequency gain roll-off
G
v
(
-
1 dB); note 2
20
-
-
kHz
Z
i(dif)
differential input impedance
90
150
210
k
SVRR
supply voltage ripple
rejection
on and mute; note 3
55
63
-
dB
standby; note 3
-
90
-
dB
CMRR
common mode rejection
ratio
on; note 4
56
80
-
dB
ISRR
input signal rejection ratio
mute; note 5
80
100
-
dB
V
n(o)
noise output voltage
on; note 6
-
100
150
V
mute; notes 6 and 7
-
60
-
V
2003 Feb 12
14
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
TEST AND APPLICATION INFORMATION
handbook, full pagewidth
POWER-
STAGE
STAT
VP*
VP*
75
k
10
k
RL =
4
-
+
C1
+
C1
-
FEEDBACK
CIRCUIT
TDA1562
POWER-
STAGE
CLASS-B
CLASS-H
FAST MUTE
TEMPERATURE
SENSOR
LOAD DUMP
PROTECTION
STANDBY
MUTE
ON
LOAD
DETECTOR
DYNAMIC
DISTORTION
DETECTOR
DIAGNOSTIC
INTERFACE
TEMPERATURE
PROTECTION
CURRENT
PROTECTION
LIFT-SUPPLY
LIFT-SUPPLY
disable
disable
16
MODE
4
1
IN
+
100 nF
3
5
4700
F
2200
F
100
nF
75
k
15 k
reference
voltage
-
+
2
audio
source
1/2*Rs
1/2*Rs
IN
-
14
Vref
17
SGND
PRE-
AMP
PRE-
AMP
100 nF
10
F
C2
+
C2
-
OUT
-
15
13
6
GND
MGL271
12
11
DIAG
OUT
+
+
VP
7
8
4700
F
9
10
+
VP
VP2
VP1
PGND1
PGND2
Fig.9 Test and application circuit.
2003 Feb 12
15
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
Fig.10 CMRR test set-up.
handbook, full pagewidth
TDA1562
supply
10
MGL270
7
11
12
17
14
2
1
6
+
VP
RL
VCM
Ci
Ci
GND
9
SGND
PGND1 PGND2
2003 Feb 12
16
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
PACKAGE OUTLINES
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT243-1
0
5
10 mm
scale
D
L
E
A
c
A
2
L
3
Q
w
M
b
p
1
d
D
Z
e
e
x
h
1
17
j
Eh
non-concave
97-12-16
99-12-17
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
view B: mounting base side
m
2
e
v
M
B
UNIT
A
e
1
A
2
b
p
c
D
(1)
E
(1)
Z
(1)
d
e
D
h
L
L
3
m
mm
17.0
15.5
4.6
4.4
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
2.54
v
0.8
12.2
11.8
1.27
e
2
5.08
2.4
1.6
E
h
6
2.00
1.45
2.1
1.8
3.4
3.1
4.3
12.4
11.0
Q
j
0.4
w
0.03
x
2003 Feb 12
17
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
UNIT
A
e
1
e
2
A
2
b
p
c
E
(1)
D
(1)
Z
(1)
d
e
L
L
1
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
13.5
4.6
4.4
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
2.54
12.2
11.8
1.27
2.54
3.75
3.15
E
h
D
h
6
2.00
1.45
2.1
1.8
3.4
3.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
3.75
3.15
SOT577-2
0
5
10 mm
scale
Q
j
0.4
w
0.6
v
0.03
x
D
E
A
L
1
Q
L
c
A
2
w
M
b
p
1
d
Z
e
2
e
e
1
17
j
01-01-05
RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads
(row spacing 2.54 mm)
SOT577-2
v
M
D
x
h
Eh
non-concave
view B: mounting base side
B
2003 Feb 12
18
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
UNIT
A
e
1
e
2
A
2
b
p
c
E
(1)
D
(1)
Z
(1)
d
e
L
L
1
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
13.5
4.6
4.4
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
2.54
12.2
11.8
1.27
2.54
3.75
3.15
E
h
D
h
6
2.00
1.45
2.1
1.8
3.4
3.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
3.75
3.15
SOT577-2
0
5
10 mm
scale
Q
j
0.4
w
0.6
v
0.03
x
D
E
A
L
1
Q
L
c
A
2
w
M
b
p
1
d
Z
e
2
e
e
1
17
j
01-01-05
RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads
(row spacing 2.54 mm)
SOT577-2
v
M
D
x
h
Eh
non-concave
view B: mounting base side
B
2003 Feb 12
19
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
UNIT
A
e
1
A
2
b
p
c
D
(1)
E
(1)
Z
(1)
d
e
D
h
L
L
1
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
13.5
4.6
4.4
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
2.54
12.2
11.8
1.27
e
2
2.54
3.75
3.15
E
h
6
2.00
1.45
2.1
1.9
3.4
3.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
3.75
3.15
SOT668-2
0
5
10 mm
scale
Q
j
0.4
w
0.6
v
0.03
x
D
E
A
L
1
Q
L
c
A
2
w
M
b
p
1
d
Z
e
2
e
e
1
17
j
01-01-05
RDBS17P: plastic rectangular-DIL-bent-SIL (reverse bent) power package; 17 leads
(row spacing 2.54 mm)
SOT668-2
v
M
D
x
h
Eh
non-concave
view B: mounting base side
B
2003 Feb 12
20
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
SOLDERING
Introduction to soldering through-hole mount
packages
This text gives a brief insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our
"Data Handbook IC26; Integrated Circuit
Packages" (document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is
260
C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.
The total contact time of successive solder waves must not
exceed 5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
stg(max)
). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300
C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400
C, contact may be up to 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
PACKAGE
SOLDERING METHOD
DIPPING
WAVE
DBS, DIP, HDIP, SDIP, SIL
suitable
suitable
(1)
2003 Feb 12
21
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL
DATA SHEET
STATUS
(1)
PRODUCT
STATUS
(2)(3)
DEFINITION
I
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status `Production'), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Feb 12
22
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
NOTES
2003 Feb 12
23
Philips Semiconductors
Preliminary specification
70 W high efficiency power amplifier
with diagnostic facility
TDA1562Q; TDA1562ST;
TDA1562SD
NOTES
Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
753503/02/pp
24
Date of release:
2003 Feb 12
Document order number:
9397 750 09939