DATA SHEET
Product specification
File under Integrated Circuits, IC01
July 1994
INTEGRATED CIRCUITS
TDA2616/TDA2616Q
2 x 12 W hi-fi audio power
amplifiers with mute
July 1994
2
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers
with mute
TDA2616/TDA2616Q
FEATURES
Requires very few external components
No switch-on/switch-off clicks
Input mute during switch-on and switch-off
Low offset voltage between output and ground
Excellent gain balance of both amplifiers
Hi-fi in accordance with IEC 268 and DIN 45500
Short-circuit proof and thermal protected
Mute possibility.
GENERAL DESCRIPTION
The TDA2616 and TDA2616Q are dual power amplifiers.
The TDA2616 is supplied in a 9-lead single-in-line (SIL9)
plastic power package (SOT131), while the TDA2616Q is
supplied in a 9-lead SIL-bent-to-DIL plastic power package
(SOT157). They have been especially designed for mains
fed applications, such as stereo radio and stereo TV.
QUICK REFERENCE DATA
Stereo application
ORDERING INFORMATION
Notes
1. SOT131-2; 1996 August 27.
2. SOT157-2; 1996 August 27.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
P
supply voltage range
7.5
-
21
V
P
O
output power
V
P
=
16 V; THD = 0.5%
-
12
-
W
G
v
internal voltage gain
-
30
-
dB
G
v
channel unbalance
-
0.2
-
dB
channel separation
-
70
-
dB
SVRR
supply voltage ripple rejection
-
60
-
dB
V
no
noise output voltage
-
70
-
V
EXTENDED TYPE
NUMBER
PACKAGE
PINS
PIN POSITION
MATERIAL
CODE
TDA2616
9
SIL
plastic
SOT131
(1)
TDA2616Q
9
SIL-bent-to-DIL
plastic
SOT157
(2)
July 1994
3
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
Fig.1 Block diagram.
handbook, full pagewidth
MCD375 - 1
5
voltage
comparator
4
4 k
10 k
P
V
P
+ V
THERMAL
PROTECTION
5 k
1
CM
20 k
V
A
B
V
P
V
680
20 k
10 k
V
A
B
V
P
+ V
ref1
V
ref3
V
ref2
+ V
ref2
V
P
+ V
CM
20 k
VA
B
V
P
V
680
20 k
ref1
V
ref1
V
6
P
V
8
9
3
2
TDA2616
INV1
MUTE
1/2 V / GND
OUT1
OUT2
INV1, 2
INV2
P
7
July 1994
4
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
PINNING
SYMBOL
PIN
DESCRIPTION
-
INV1
1
non-inverting input 1
MUTE
2
mute input
1/2V
P
/GND
3
1/2 supply voltage or ground
OUT1
4
output 1
-
V
P
5
supply voltage (negative)
OUT2
6
output 2
+V
P
7
supply voltage (positive)
INV1, 2
8
inverting inputs 1 and 2
-
INV2
9
non-inverting input 2
Fig.2 Pin configuration.
handbook, halfpage
MCD372 - 1
1
2
3
4
5
6
7
8
9
P
+ V
OUT2
MUTE
INV2
TDA2616
/ GND
P
V
INV1
INV1, 2
OUT1
1/2 V
P
FUNCTIONAL DESCRIPTION
The TDA2616 is a hi-fi stereo amplifier designed for mains
fed applications, such as stereo radio and TV. The circuit
is optimally designed for symmetrical power supplies, but
is also well-suited to asymmetrical power supply systems.
An output power of 2
12 W (THD = 0.5%) can be
delivered into an 8
load with a symmetrical power supply
of
16 V. The gain is internally fixed at 30 dB, thus offering
a low gain spread and a very good gain balance between
the two amplifiers (0.2 dB).
A special feature is the input mute circuit. This circuit
disconnects the non-inverting inputs when the supply
voltage drops below
6 V, while the amplifier still retains its
DC operating adjustment. The circuit features suppression
of unwanted signals at the inputs, during switch-on and
switch-off.
The mute circuit can also be activated via pin 2. When a
current of 300
A is present at pin 2, the circuit is in the
mute condition.
The device is provided with two thermal protection circuits.
One circuit measures the average temperature of the
crystal and the other measures the momentary
temperature of the power transistors. These control
circuits attack at temperatures in excess of +150
C, so a
crystal operating temperature of max. +150
C can be
used without extra distortion.
With the derating value of 2.5 K/W, the heatsink can be
calculated as follows:
at R
L
= 8
and V
P
=
16 V, the measured maximum
dissipation is 14.6 W.
With a maximum ambient temperature of +65
C, the
thermal resistance of the heatsink is:
The internal metal block has the same potential as pin 5.
R
th
150
65
14.6
----------------------
2.5
3.3 K/W.
=
=
July 1994
5
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
LIMITING VALUES
In accordance with the Absolute maximum System (IEC 134).
Note to the limiting values
1. For asymmetrical power supplies (with the load short-circuited), the maximum unloaded supply voltage is limited to
V
P
= 28 V and with an internal supply resistance of R
S
4
, the maximum unloaded supply voltage is limited to 32 V
(with the load short-circuited). For symmetrical power supplies the circuit is short-circuit-proof up to V
P
=
21 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
P
supply voltage
-
21
V
I
OSM
non-repetitive peak output current
-
4
A
P
tot
total power dissipation
see Fig.3
-
25
W
T
stg
storage temperature range
-
55
+150
C
T
XTAL
crystal temperature
-
+150
C
T
amb
ambient operating temperature range
-
25
150
C
t
sc
short circuit time
short-circuit to ground; note 1
-
1
h
Fig.3 Power derating curve.
handbook, halfpage
25
0
50
150
32
24
8
0
16
MCD376 - 2
100
T ( C)
o
amb
P
(W)
tot
infinite
heatsink
R = 3.3 K/W
th-hs
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-a
from junction to ambient in free air
2.5 K/W
July 1994
6
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
V
P
supply voltage range
-
16
21
V
I
ORM
repetitive peak output current
-
2.2
-
A
Operating position; note 1
V
P
supply voltage range
7.5
16
21
V
I
P
total quiescent current
R
L
=
18
40
70
mA
P
O
output power
THD = 0.5%
10
12
-
W
THD = 10%
12
15
-
W
THD
total harmonic distortion
P
O
= 6 W
-
0.15
0.2
%
B
power bandwidth
THD = 0.5%; note 2
-
20 to
20 000
-
Hz
G
v
voltage gain
29
30
31
dB
G
v
gain unbalance
-
0.2
1
dB
V
no
noise output voltage
note 3
-
70
140
V
Z
i
input impedance
14
20
26
k
SVRR
supply voltage ripple rejection
note 4
40
60
-
dB
channel separation
R
S
= 0
46
70
-
dB
I
bias
input bias current
-
0.3
-
A
V
GND
DC output offset voltage
-
30
200
mV
V
4-6
DC output offset voltage
between two channels
-
4
150
mV
M
UTE POSITION
(
AT
I
MUTE
300
A)
V
O
output voltage
V
I
= 600 mV
-
0.3
1.0
mV
Z
2-7
mute input impedance
note 7
6.7
9
11.3
k
I
P
total quiescent current
R
L
=
18
40
70
mA
V
no
noise output voltage
note 3
-
70
140
V
SVRR
supply voltage ripple rejection
note 4
40
55
-
dB
V
GND
DC output offset voltage
-
40
200
mV
V
off
offset voltage with respect to operating
position
-
4
150
mV
I
2
current if pin 2 is connected to pin 5
-
-
8.2
mA
Mute position; note 5
V
P
supply voltage range
2
-
5.8
V
I
P
total quiescent current
R
L
=
9
30
40
mA
V
O
output voltage
V
I
= 600 mV
-
0.3
1.0
mV
V
no
noise output voltage
note 3
-
70
140
V
SVRR
supply voltage ripple rejection
note 4
40
55
-
dB
July 1994
7
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
Notes to the characteristics
1. V
P
=
16 V; R
L
= 8
; T
amb
= 25
C; f = 1 kHz; symmetrical power supply I
MUTE
< 30
A. See Fig.4
2. The power bandwidth is measured at an output power of P
O max
-
3 dB
3. The noise output voltage (RMS value) is measured at R
S
= 2 k
, unweighted (20 Hz to 20 kHz)
4. The ripple rejection is measured at R
S
= 0 and f = 100 Hz to 20 kHz. The ripple voltage (200 mV) is applied in phase
to the positive and the negative supply rails. With asymmetrical power supplies, the ripple rejection is measured at
f = 1 kHz
5.
V
P
= 4 V; R
L
= 8
; T
amb
= 25
C; f = 1 kHz; symmetrical power supply. See Fig.4
6. V
P
= 24 V; R
L
= 8
; T
amb
= 25
C; f = 1 kHz; asymmetrical power supply I
MUTE
< 30
A. See Fig.5
7. The internal network at pin 2 is a resistor devider of typical 4 k
and 5 k
to the positive supply rail. At the connection
of the 4 k
and 5 k
resistor a zener diode of typical 6.6 V is also connected to the positive supply rail. The spread
of the zener voltage is 6.1 to 7.1 V.
V
GND
DC output offset voltage
-
40
200
mV
Operating position; note 6
I
P
total quiescent current
18
40
70
mA
P
O
output power
THD = 0.5%
5
6
-
W
THD = 10%
6.5
8
-
W
THD = 0.5%; R
L
= 4
-
10
-
W
THD = 10%; R
L
= 4
-
14
-
W
THD
total harmonic distortion
P
O
= 4 W
-
0.13
0.2
%
B
power bandwidth
THD = 0.5%; note 2
-
40 to
20 000
-
Hz
G
v
voltage gain
29
30
31
dB
G
v
gain unbalance
-
0.2
1
dB
V
no
noise output voltage
note 3
-
70
140
V
Z
i
input impedance
14
20
26
k
SVRR
supply voltage ripple rejection
35
44
-
dB
channel separation
-
45
-
dB
M
UTE POSITION
(I
MUTE
300
A)
V
O
output voltage
V
I
= 600 mV
-
0.3
1.0
mV
Z
2-7
mute input impedance
note 7
6.7
9
11.3
k
I
P
total quiescent current
18
40
70
mA
V
no
noise output voltage
note 3
-
70
140
V
SVRR
supply voltage ripple rejection
note 4
35
44
-
dB
V
off
offset voltage with respect to operating
position
-
4
150
mV
I
2
current if pin 2 is connected to pin 5
-
-
8.2
mA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
July 1994
8
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
Fig.4 Test and application circuit with symmetrical power supply.
handbook, full pagewidth
2200
F
7
2
mute input
P
+ V
5
TDA2616
MCD374 - 3
100 nF
6
20 k
8
20 k
680
220 nF
9
R = 8
L
22 nF
8.2
I
V
P
V
3
R = 8
L
22 nF
8.2
4
20 k
220 nF
1
I
V
20 k
680
2200
F
July 1994
9
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
Fig.5 Test and application circuit with asymmetrical power supply.
handbook, full pagewidth
6
20 k
5
8
3
MCD373 - 2
20 k
680
9
R = 8
L
22 nF
680
F
8.2
100 nF
2200
F
7
2
mute input
S
V
S
R
P
V
2
4
20 k
1
220 nF
100
F
I
V
220 nF
I
V
20 k
680
P
1/2 V
internal
R = 8
L
22 nF
680
F
8.2
TDA2616
July 1994
10
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
PACKAGE OUTLINES
UNIT
A
b
max.
b
p
2
c
D
(1)
E
(1)
Z
(1)
d
e
D
h
L
j
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
4.6
4.2
1.1
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
2.54
12.2
11.8
3.4
3.1
A
max.
1
2.0
E
h
6
2.00
1.45
2.1
1.8
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
17.2
16.5
SOT131-2
92-11-17
95-03-11
0
5
10 mm
scale
Q
0.25
w
0.03
x
D
L
A
E
c
A 2
Q
w
M
b
p
d
D
Z
e
x
h
1
9
Eh
non-concave
seating plane
1
b
j
SIL9P: plastic single in-line power package; 9 leads
SOT131-2
view B: mounting base side
B
July 1994
11
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
UNIT
A
A
e
1
2
b
p
c
D
(1)
E
(1)
Z
(1)
d
e
D
h
L
L
3
m
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
17.0
15.5
4.6
4.2
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
5.08
12.2
11.8
2.54
e
2
5.08
2.4
1.6
E
h
6
2.00
1.45
0.8
3.4
3.1
4.3
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
12.4
11.0
SOT157-2
0
5
10 mm
scale
v
2.1
1.8
Q
j
0.25
w
0.03
x
D
L
E
A
c
A
2
L
3
Q
w
M
b
p
1
d
D
Z
e
e
x
h
1
9
j
Eh
non-concave
92-10-12
95-03-11
DBS9P: plastic DIL-bent-SIL power package; 9 leads (lead length 12 mm)
SOT157-2
B
view B: mounting base side
m
2
e
v
M
July 1994
12
Philips Semiconductors
Product specification
2 x 12 W hi-fi audio power amplifiers with
mute
TDA2616/TDA2616Q
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"IC Package Databook" (order code 9398 652 90011).
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260
C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
stg max
). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300
C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400
C, contact may be up to 5 seconds.
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
PDF 
ZIP