Document Outline
- FEATURES
- APPLICATIONS
- GENERAL DESCRIPTION
- QUICK REFERENCE DATA
- ORDERING INFORMATION
- BLOCK DIAGRAM
- PINNING
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- TEST AND APPLICATION INFORMATION
- Component values for measurement circuit
- INTERNAL PIN CONFIGURATION
- PACKAGE OUTLINE
- SOLDERING
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Preliminary specification
File under Integrated Circuits, IC02
1998 Mar 09
INTEGRATED CIRCUITS
TDA5744; TDA5745
Low power mixers/oscillators for
hyperband tuners
1998 Mar 09
2
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
FEATURES
Mixers/oscillators for hyperband tuners
Balanced mixer with a common emitter input for VHF
(single input)
Balanced mixer with a common base input for UHF
(double input)
4-pin common emitter oscillator for VHF
4-pin common emitter oscillator for UHF
Electronic band switch
IF amplifier with a low output impedance to drive the
SAW filter directly (
2 k
load)
Low power, low radiation and small size
Pin compatible single-chip synthesizer mixer/oscillator
for Full Scale Tuners (FST) are available: TDA6404,
TDA6405 and TDA6405A.
APPLICATIONS
Hyperband tuners for Europe using a 2-band
mixer/oscillator in a switched concept.
GENERAL DESCRIPTION
The TDA5744 and TDA5745 are 2-band mixers/oscillators
intended for VHF/UHF and hyperband tuners (see Fig.1).
The Integrated Circuits (ICs) include two double balanced
mixers and two oscillators, for the VHF and UHF band, and
an IF amplifier. With proper oscillator application and by
using a switchable inductor to split the VHF band into two
sub-bands (the full VHF/UHF and hyperband) the TV
bands can be covered. Two pins are available between
the mixer output and the IF amplifier input to enable IF
filtering for improved signal handling. Band selection is
made by band switch pin BS.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CC
supply voltage
operating
4.5
5
5.5
V
I
CC
supply current
-
58
-
mA
T
stg
IC storage temperature
-
40
-
+150
C
T
amb
operating ambient temperature
-
20
-
+85
C
f
i(RF)
RF input frequency
VHF band
45.25
-
399.25 MHz
UHF band
407.25
-
855.25 MHz
G
V
voltage gain
VHF band
-
27
-
dB
UHF band
-
38
-
dB
F
noise figure
VHF band
-
8
-
dB
UHF band
-
8.5
-
dB
V
o
output voltage causing 1% cross
modulation in channel
VHF band
-
119
-
dB
V
UHF band
-
118
-
dB
V
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA5744TS;
TDA5745TS
SSOP24
plastic shrink small outline package; 24 leads; body width 5.3 mm
SOT340-1
1998 Mar 09
3
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
BLOCK DIAGRAM
Fig.1 Block diagram.
The pin numbers in parenthesis represent the TDA5745.
handbook, full pagewidth
MGM466
IF
AMPLIFIER
DC
STABILIZER
(11) 14
(12) 13
VHF
OSCILLATOR
VHF
MIXER
UHF
MIXER
VHF
STAGE
(3) 22
(4) 21
(1) 24
3 (22)
UHF
STAGE
2 (23)
1 (24)
12 (13)
11 (14)
10 (15)
8 (17)
7 (18 )
6 (19)
5 (20)
ELECTRONIC
BAND
SWITCH
9 (16)
(2) 23
UHF
OSCILLATOR
(7) 18
(8) 17
(5) 20
(6) 19
(10) 15
(9) 16
4 (21)
TDA5744
(TDA5745)
UHFIN1
UHFIN2
VHFIN
RFGND
IFFIL1
IFFIL2
BS
n.c.
n.c.
n.c.
n.c.
n.c.
VHFOSCIB2
UHFOSCOC1
UHFOSCIB1
GND
IFOUT2
IFOUT1
VCC
UHFOSCOC2
UHFOSCIB2
VHFOSCIB1
VHFOSCOC1
VHFOSCOC2
1998 Mar 09
4
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
PINNING
SYMBOL
PIN
DESCRIPTION
TDA5744
TDA5745
UHFIN1
1
24
UHF input 1
UHFIN2
2
23
UHF input 2
VHFIN
3
22
VHF input
RFGND
4
21
RF ground
IFFIL1
5
20
IF filter output 1
IFFIL2
6
19
IF filter output 2
n.c.
7
18
not connected
n.c.
8
17
not connected
BS
9
16
electronic band switch
n.c.
10
15
not connected
n.c.
11
14
not connected
n.c.
12
13
not connected
V
CC
13
12
supply voltage
IFOUT1
14
11
IF amplifier output 1
IFOUT2
15
10
IF amplifier output 2
GND
16
9
ground
UHFOSCIB1
17
8
UHF oscillator base input 1
UHFOSCOC1
18
7
UHF oscillator collector output 1
UHFOSCOC2
19
6
UHF oscillator collector output 2
UHFOSCIB2
20
5
UHF oscillator base input 2
VHFOSCIB1
21
4
VHF oscillator base input 1
VHFOSCOC1
22
3
VHF oscillator collector output 1
VHFOSCOC2
23
2
VHF oscillator collector output 2
VHFOSCIB2
24
1
VHF oscillator base input 2
1998 Mar 09
5
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
Fig.2 Pin configuration for TDA5744TS.
handbook, halfpage
UHFIN1
UHFIN2
VHFIN
RFGND
IFFIL1
IFFIL2
n.c.
n.c.
BS
n.c.
n.c.
n.c.
VHFOSCIB2
UHFOSCOC1
UHFOSCIB1
GND
IFOUT2
IFOUT1
VCC
1
2
3
4
5
6
7
8
9
10
11
24
23
22
21
20
19
18
17
16
15
14
13
12
TDA5744TS
MGM464
UHFOSCOC2
UHFOSCIB2
VHFOSCIB1
VHFOSCOC1
VHFOSCOC2
Fig.3 Pin configuration for TDA5745TS.
handbook, halfpage
VHFOSCIB2
VHFOSCOC2
VHFOSCOC1
VHFOSCIB1
UHFOSCIB2
UHFOSCOC2
UHFOSCOC1
UHFOSCIB1
GND
IFOUT2
IFOUT1
VCC
UHFIN1
n.c.
n.c.
BS
n.c.
n.c.
n.c.
1
2
3
4
5
6
7
8
9
10
11
24
23
22
21
20
19
18
17
16
15
14
13
12
TDA5745TS
MGM465
IFFIL2
IFFIL1
RFGND
VHFIN
UHFIN2
1998 Mar 09
6
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
V
CC
= 5 V; T
amb
= 25
C; unless otherwise specified; measured in Fig.11.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
I
O(n)
output current of each pin to ground:
for TDA5744; pins 1 to 6, 9 and 13 to 24
-
-
10
mA
for TDA5745; pins 1 to 12, 16 and 19 to 24
-
-
10
mA
t
sc(max)
maximum short-circuit time (all pins to V
CC
and all pins to GND and RFGND)
-
10
s
T
stg
IC storage temperature
-
40
+150
C
T
amb
operating ambient temperature
-
20
+85
C
T
j
junction temperature
-
150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
in free air
119
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
V
CC
supply voltage
4.5
5
5.5
V
I
CC
supply current
-
58
65
mA
V
sw(VHF)
VHF band switching voltage
0
-
2
V
V
sw(UHF)
UHF band switching voltage
3
-
V
CC
V
I
sw(VHF)
VHF band switching current
-
-
2
A
I
sw(UHF)
UHF band switching current V
sw(UHF)
= 5 V
-
4.5
10
A
IF amplifier
S
22
output reflection coefficient
magnitude
-
-
12.5
-
dB
phase
-
1.4
-
deg
R
s
real part of Z
o
= R
s
+ j
L
s
-
81
-
L
s
imaginary part of
Z
o
= R
s
+ j
L
s
-
9.5
-
nH
VHF mixer (including IF amplifier)
f
i(RF)
RF input frequency
picture carrier frequency
45.25
-
399.25 MHz
F
noise figure
f
RF
= 50 MHz; see Figs 8 and 9
-
7
9
dB
f
RF
= 150 MHz; see Figs 8 and 9
-
8
10
dB
f
RF
= 300 MHz
-
9
11
dB
g
os
optimum source
conductance for noise figure
f
RF
= 50 MHz
-
0.7
-
mS
f
RF
= 150 MHz
-
0.9
-
mS
f
RF
= 300 MHz
-
1.5
-
mS
1998 Mar 09
7
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
g
i
input conductance
f
RF
= 45.25 MHz
-
0.25
-
mS
f
RF
= 399.25 MHz
-
0.5
-
mS
C
i
input capacitance
f
RF
= 45.25 to 399.25 MHz
-
2
-
pF
V
o
output voltage causing 1%
cross modulation in channel
f
RF
= 45.25 MHz; see Fig.6
116
119
-
dB
V
f
RF
= 399.25 MHz; see Fig.6
116
119
-
dB
V
V
i
input voltage causing pulling
in channel (750 Hz)
f
RF
= 399.25 MHz; note 1
-
88
-
dB
V
G
V
voltage gain
f
RF
= 45.25 MHz; see Fig.4
24.5
27
29.5
dB
f
RF
= 399.25 MHz; see Fig.4
24.5
27
29.5
dB
VHF oscillator
f
osc
oscillator frequency
84.15
-
438.15 MHz
f
osc(V)
oscillator frequency shift
with supply voltage
V
CC
= 5%; note 2
-
100
200
kHz
V
CC
= 10%; worst case in the
frequency range; note 2
-
200
-
kHz
f
osc(T)
oscillator frequency drift
with temperature
T = 25
C without compensation: NP0
capacitors; worst case in the frequency
range; note 3
-
1300
tbf
kHz
f
osc(t)
oscillator frequency drift
with time
worst case in the frequency range;
note 4
-
600
tbf
kHz
osc
phase noise,
carrier-to-noise sideband
100 kHz frequency offset; worst case
in the frequency range
-
106
-
dBc/Hz
RSC
(p-p)
ripple susceptibility of V
CC
(peak-to-peak value)
V
CC
= 5 V; worst case in the frequency
range; ripple frequency 500 kHz; note 5
15
40
-
mV
UHF mixer (including IF amplifier)
f
i(RF)
RF input frequency
picture carrier frequency
407.25
-
855.25 MHz
F
noise figure
f
RF
= 407.25 MHz; see Fig.10
-
8
10
dB
f
RF
= 855.25 MHz; not corrected for
image; see Fig.10
-
9
11
dB
R
s
real part of Z
i
= R
s
+ j
L
s
f
RF
= 407.25 MHz
-
30
-
f
RF
= 855.25 MHz
-
38
-
L
s
imaginary part of
Z
i
= R
s
+ j
L
s
f
RF
= 407.25 MHz
-
9
-
nH
f
RF
= 855.25 MHz
-
6
-
nH
V
o
output voltage causing 1%
cross modulation in channel
f
RF
= 407.25 MHz; see Fig.7
116
119
-
dB
V
f
RF
= 855.25 MHz; see Fig.7
114
117
-
dB
V
V
i
input voltage causing pulling
in channel (750 Hz)
f
RF
= 855.25 MHz; note 1
-
78
-
dB
V
G
V
voltage gain
f
RF
= 407.25 MHz; see Fig.4
35
38
41
dB
f
RF
= 855.25 MHz; see Fig.4
35
38
41
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1998 Mar 09
8
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
Notes
1. This is the level of the RF signal (100% amplitude modulated with 11.89 kHz) that causes a 750 Hz frequency
deviation on the oscillator signal; it produces sidebands 30 dB below the level of the oscillator signal.
2. The frequency shift is defined as the change of the oscillator frequency when the supply voltage varies from
V
CC
= 5 to 4.5 V or from V
CC
= 5 to 5.25 V. The oscillator is free-running during this measurement.
3. The frequency drift is defined as the change of the oscillator frequency when the ambient temperature varies from
T
amb
= 25 to 0
C or from T
amb
= 25 to 50
C. The oscillator is free-running during this measurement.
4. The switching on drift is defined as the change of the oscillator frequency between 5 seconds and 15 minutes after
switching on. The oscillator is free-running during this measurement.
5. The ripple susceptibility is measured for a 500 kHz ripple at the IF amplifier output using the measurement circuit;
the level of the ripple signal is increased until a difference of 53.5 dB between the IF carrier set at 100 dB
V and the
sideband components is reached.
6. Channel x beat: picture carrier frequency (f
pc
) and sound carrier frequency (f
sc
) both at 80 dB
V.
The rejection of the interfering product f
pc(RF)
+ f
sc(RF)
-
f
osc
at 35.35 MHz should be >60 dB.
7. Channel S02: f
pc
is 76.25 MHz at 70 dB
V; f
osc
= 115.15 MHz.
The rejection of f
osc
-
2
f
IF
= 37.35 MHz should be >66 dB.
UHF oscillator
f
osc
oscillator frequency
446.15
-
894.15 MHz
f
osc(V)
oscillator frequency shift
with supply voltage
V
CC
= 5%; note 2
-
30
80
kHz
V
CC
= 10%; worst case in the
frequency range; note 2
-
80
tbf
kHz
f
osc(T)
oscillator frequency drift
with temperature
T = 25
C; with compensation; worst
case in the frequency range; note 3
-
600
tbf
kHz
f
osc(t)
oscillator frequency drift
with time
worst case in the frequency range;
note 4
-
200
tbf
kHz
osc
phase noise,
carrier-to-noise sideband
100 kHz frequency offset; worst case
in the frequency range
-
106
-
dBc/Hz
RSC
(p-p)
ripple susceptibility of V
CC
(peak-to-peak value)
V
CC
= 5 V; worst case in the frequency
range; ripple frequency 500 kHz; note 5
15
20
-
mV
Rejection at the IF amplifier output
INT
CHX
channel x beat
note 6
60
-
-
dBc
INT
S02
S02 beat
note 7
66
-
-
dBc
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1998 Mar 09
9
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
TEST AND APPLICATION INFORMATION
Fig.4 Voltage gain (G
V
) measurement in the VHF band.
(1) N1 is 2
5 turns.
(2) N2 is 2 turns.
The gain is defined as the transducer gain plus the voltage transformation ratio (T
loss
) of the transformer.
Z
i
>> 50
V
i
= 2
V
meas
; V
i
= 80 dB
V.
V
o
= V'
meas
+ 16 dB (transformer ratio
and transformer loss); G
V
= 20 log
N1
N2
--------
5
=
V
o
V
i
------
handbook, full pagewidth
50
50
V
e
Vmeas
RMS
voltmeter
spectrum
analyzer
Vi
signal
source
MGK828
D.U.T.
VHFIN
IFOUT1
IFOUT2
50
Vo
V'meas
C
T
(1)
N1
(2)
N2
Fig.5 Voltage gain (G
V
) measurement in the UHF band.
(1) N1 is 2
5 turns.
(2) N2 is 2 turns.
The gain is defined as the transducer gain plus the voltage transformation ratio (T
loss
) of the transformer.
V
i
= V
meas
; V
i
= 70 dB
V.
V
o
= V'
meas
+ 16 dB (transformer ratio
and transformer loss); G
v
= 20 log
+ 1 dB (1 dB = correction for hybrid loss).
N1
N2
--------
5
=
V
o
V
i
------
handbook, full pagewidth
Vi
50
50
V
e
Vmeas
RMS
voltmeter
signal
source
50
A
B
C
D
HYBRID
D.U.T.
UHFIN1
IFOUT1
IFOUT2
UHFIN2
spectrum
analyzer
MGK829
50
Vo
V'meas
C
T
(1)
N1
(2)
N2
1998 Mar 09
10
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
Fig.6 Cross modulation measurement in the VHF band.
(1) N1 is 2
5 turns.
(2) N2 is 2 turns.
Z
i
>> 50
V
i
= 2
V
meas
; V'
meas
= V
o
-
16 dB (transformer ratio
and transformer loss).
Wanted input signal V
i
= 80 dB
V at wanted f
RF
= 45.25 MHz (399.25 MHz).
Measured level of the unwanted output signal V
ou
causing 1% AM modulation in the wanted output signal;
unwanted f
RF
= 50.75 MHz (404.75 MHz); V
ou
= V'
meas
+ 16 dB.
N1
N2
--------
5
=
handbook, full pagewidth
unwanted
signal
source
eu
ew
50
50
wanted
signal
source
50
MGL275
D.U.T.
18 dB
attenuator
50
o
V
FILTER
38.9 MHz
modulation
analyzer
HYBRID
A
C
B
D
V
RMS
voltmeter
Vi
AM = 30%
meas
V'
VHFIN
IFOUT1
IFOUT2
C
T
50
V
Vmeas
RMS
voltmeter
(1)
N1
(2)
N2
Fig.7 Cross modulation measurement in the UHF band.
handbook, full pagewidth
unwanted
signal
source
50
50
wanted
signal
source
50
50
MGL276
D.U.T.
18 dB
attenuator
50
o
V
FILTER
38.9 MHz
modulation
analyzer
HYBRID
A
C
B
D
HYBRID
A
C
B
D
V
RMS
voltmeter
Vi
AM = 30%
eu
ew
(1)
N1
(2)
N2
UHFIN1 IFOUT1
IFOUT2
UHFIN2
C
T
50
V
Vmeas
RMS
voltmeter
(1) N1 is 2
5 turns.
(2) N2 is 2 turns.
V
i
= V
meas
; V'
meas
= V
o
-
16 dB (transformer ratio
and transformer loss).
Wanted input signal V
i
= 70 dB
V at f
RF
= 407.25 MHz (855.25 MHz).
Measured level of the unwanted output signal V
ou
causing 1% AM modulation in the wanted output signal;
unwanted f
RF
= 412.75 MHz (860.75 MHz); V
ou
= V'
meas
+ 16 dB.
N1
N2
--------
5
=
1998 Mar 09
11
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
Fig.8 Input circuit for optimum noise figure in the VHF band.
(a) For f
RF
= 50 MHz:
VHF mixer frequency response measured = 57 MHz;
loss = 0 dB.
Image suppression = 16 dB.
C1 = 1 nF; C2 = 2.2 pF.
L1 = 7 turns (
5.5 mm; wire
= 0.5 mm).
I1 = semi rigid cable (RIM): 5 cm long.
(semi rigid cable (RIM); 33 dB/100 m; 50
; 96 pF/m).
(b) For f
RF
= 150 MHz:
VHF mixer frequency response measured = 150.3 MHz;
loss = 1.3 dB.
Image suppression = 13 dB.
C3 = 1 nF; C4 = 2.2 pF.
I2 = semi rigid cable (RIM): 30 cm long.
I3 = semi rigid cable (RIM): 5 cm long.
(semi rigid cable (RIM); 33 dB/100 m; 50
; 96 pF/m).
handbook, full pagewidth
MBE286 - 1
L1
C2
C1
PCB
plug
plug
BNC
BNC
RIM-RIM
I1
C4
C3
PCB
RIM-RIM
I3
I2
(a)
(b)
F = F
meas
-
loss (of input circuit) (dB).
Fig.9 Noise figure (F) measurement in the VHF band.
handbook, full pagewidth
MGL277
VHFIN IFOUT1
IFOUT2
D.U.T.
NOISE
SOURCE
NOISE
FIGURE
METER
BNC
RIM
INPUT
CIRCUIT
C
T
1998 Mar 09
12
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
Loss (in hybrid) = 1 dB; F = F
meas
-
loss (in hybrid).
Fig.10 Noise figure (F) measurement in the UHF band.
handbook, full pagewidth
MGL278
UHFIN1
UHFIN2
IFOUT1
D.U.T.
NOISE
SOURCE
NOISE
FIGURE
METER
50
A
B
C
D
HYBRID
IFOUT2
C
T
1998 Mar 09
13
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
Fig.11 Measurement circuit.
The pin numbers in parenthesis represent the TDA5745.
handbook, full pagewidth
MGM467
1 (24)
2 (23)
3 (22)
4 (21)
UHFIN1
UHFIN2
VHFIN
RFGND
5 (20)
15 pF
15 pF
1
2
3
6
4
7
8
6 (19)
7 (18)
8 (17)
IFFIL1
IFFIL2
n.c.
n.c.
9 (16)
10 (15)
11 (14)
12 (13)
BS
n.c.
n.c.
n.c.
P9
(12) 13
(11) 14
IFOUT1
(10) 15
(9) 16
(8) 17
(7) 18
(6) 19
VCC
GND
IFOUT2
UHFOSCIB1
UHFOSCOC1
UHFOSCOC2
(5) 20
(4) 21
(3) 22
(2) 23
(1) 24
UHFOSCIB2
VHFOSCIB1
VHFOSCOC2
VHFOSCOC1
TDA5744
(TDA5745)
C1
P1
P2
P3
1 nF
C3
1 nF
C6
1 nF
UHF1
UHF2
VHF
UHF
C13
C11
1.2 k
330
10
F
(16 V)
10
F
(16 V)
VHFH
LED-3Y
330
VHFL
LED-3R
330
UHF
R10
R8
R11
LED-3G
D6
D5
D7
R18
50
R22
C27
C28
for test purpose only
VCC
+
VCC
VCC
TR1
BC847B
Vripple
J5
J1
VHFH
J2
VHFL
J3
PLL
J4
VHFOSCIB2
C17
1 pF
1 pF
1 pF
1 pF
C8
2.2 pF
C16
C7
2.2 pF
C14
C4
R21
2.2 pF
C12
C2
D1
BB149
150 pF
C9
100
pF
D3
BA792
D2
BB152
R9
4.7 k
L2
30 nH
L4
80 nH
L5
16 nH
C18
10 pF
4.7 nF
C5
4.7 nF
C10
47 pF
C15
R6
22 k
R2
22
k
L6
30 nH
1
H
L1
R4 1.5 k
R5 2.7 k
R3 22 k
22 k
R1 1.5 k
22 k
R7
D4
BB149
VHFH
VHFL
+
33 V
AGND
tuning
voltage
P6
+
5 V
1
2
3
4
C22
10 nF
C24
10 nF
L8
80 nH
L9
80 nH
C20
1 nF
C19
1 nF
C21
18 pF
1
2
3
6
L7
4
7
8
IF
OUT
P4
for test purpose only
L3
TOKO 7 km
L value/C value
R16
22 k
R14
22 k
+
VCC
+
VCC
P8
1998 Mar 09
14
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
Component values for measurement circuit
Table 1
Capacitors (all SMD and NP0 unless otherwise
specified)
Table 2
Resistors (all SMD)
COMPONENT
VALUE
C1
1 nF
C2
150 pF
C3
1 nF
C4
2.2 pF (N750)
C5
4.7 nF
C6
1 nF
C7
2.2 pF (N750)
C8
2.2 pF (N750)
C9
100 pF (N750)
C10
4.7 nF
C11
15 pF
C12
1 pF (N750)
C13
15 pF
C14
1 pF (N750)
C15
47 pF
C16
1 pF (N750)
C17
1 pF (N750)
C18
10 pF (N750)
C19
1 nF
C20
1 nF
C21
18 pF
C22
10 nF
C24
10 nF
C27
10
F (16 V; electrolytic)
C28
10
F (16 V; electrolytic)
COMPONENT
VALUE
R1
1.5 k
R2
22 k
R3
22 k
R4
1.5 k
R5
2.7 k
R6
22 k
R7
22 k
R8
330
R9
4.7 k
Table 3
Diodes and ICs
Table 4
Coils
Table 5
Transformer
Table 6
Transistors
R10
330
R11
330
R14
22 k
R16
22 k
R18
1.2 k
R21
22 k
R22
50
COMPONENT
VALUE
D1
BB149
D2
BB152
D3
BA792
D4
BB149
D5
LED-3R
D6
LED-3Y
D7
LED-3G
IC
TDA5744; TDA5745
COMPONENT
VALUE
L1
1
H (inductor)
L2
30 nH
L4
80 nH
L5
16 nH
L6
30 nH
L8
80 nH
L9
80 nH
COMPONENT
VALUE
L3
23 turns (TOKO, wire 0.07 mm)
L7
N1 = 2
5 turns; N2 = 2 turns
(TOKO, wire 0.09 mm)
COMPONENT
VALUE
TR1
BC847B
COMPONENT
VALUE
1998 Mar 09
15
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
INTERNAL PIN CONFIGURATION
SYMBOL
PIN
CONFIGURATION
(1)
AVERAGE DC VOLTAGE
(V)
TDA5744
TDA5745
VHF
UHF
UHFIN1
1
24
note 2
1.0
UHFIN2
2
23
VHFIN
3
22
1.9
note 2
RFGND
4
21
0.0
0.0
IFFIL1
5
20
3.4
3.4
IFFIL2
6
19
n.c.
7
18
not connected
note 2
note 2
8
17
10
15
11
14
12
13
BS
9
16
electronic band switch
0.0
5.0
V
CC
13
12
supply voltage
5.0
5.0
MGM468
1
2
(23)
(24)
MGM469
3
(22)
MGM470
4
(21)
MGM471
6
5
(19)
(20)
1998 Mar 09
16
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
Notes
1. The pin numbers in parenthesis represent the TDA5745.
2. Not applicable.
IFOUT1
14
11
2.2
2.2
IFOUT2
15
10
GND
16
9
0.0
0.0
UHFOSCIB1
17
8
note 2
1.9
UHFOSCOC1
18
7
2.5
UHFOSCOC2
19
6
2.5
UHFOSCIB2
20
5
1.9
VHFOSCIB1
21
4
2.0
note 2
VHFOSCOC1
22
3
2.7
VHFOSCOC2
23
2
2.7
VHFOSCIB2
24
1
2.0
SYMBOL
PIN
CONFIGURATION
(1)
AVERAGE DC VOLTAGE
(V)
TDA5744
TDA5745
VHF
UHF
MGM472
14
(11)
15
(10)
MGM473
16
(9)
MGM474
17
19
20
18
(5)
(7)
(6)
(8)
MGM475
21
23
24
22
(1)
(3)
(2)
(4)
1998 Mar 09
17
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
PACKAGE OUTLINE
UNIT
A
1
A
2
A
3
b
p
c
D
(1)
E
(1)
(1)
e
H
E
L
L
p
Q
Z
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.21
0.05
1.80
1.65
0.38
0.25
0.20
0.09
8.4
8.0
5.4
5.2
0.65
1.25
7.9
7.6
0.9
0.7
0.8
0.4
8
0
o
o
0.13
0.1
0.2
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
1.03
0.63
SOT340-1
MO-150AG
93-09-08
95-02-04
X
w
M
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v
M
A
(A )
3
A
1
12
24
13
0.25
y
pin 1 index
0
2.5
5 mm
scale
SSOP24: plastic shrink small outline package; 24 leads; body width 5.3 mm
SOT340-1
A
max.
2.0
1998 Mar 09
18
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"IC Package Databook" (order code 9398 652 90011).
Reflow soldering
Reflow soldering techniques are suitable for all SSOP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250
C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45
C.
Wave soldering
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
If wave soldering cannot be avoided, the following
conditions must be observed:
A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260
C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150
C within
6 seconds. Typical dwell time is 4 seconds at 250
C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300
C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320
C.
1998 Mar 09
19
Philips Semiconductors
Preliminary specification
Low power mixers/oscillators for
hyperband tuners
TDA5744; TDA5745
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1998
SCA57
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Printed in The Netherlands
545104/1200/01/pp20
Date of release: 1998 Mar 09
Document order number:
9397 750 02946
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