Document Outline
- FEATURES
- GENERAL DESCRIPTION
- APPLICATIONS
- QUICK REFERENCE DATA
- ORDERING INFORMATION
- BLOCK DIAGRAM
- PINNING
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- HANDLING
- CHARACTERISTICS
- APPLICATION INFORMATION
- PACKAGE OUTLINE
- SOLDERING
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Objective specification
Supersedes data of 1996 Oct 08
File under Integrated Circuits, IC02
1996 Oct 24
INTEGRATED CIRCUITS
TDA8010M; TDA8010AM
Low power mixers/oscillators
for satellite tuners
1996 Oct 24
2
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M;
TDA8010AM
FEATURES
Fully balanced mixer with common base input
Wide input power and frequency range
One-band 2 pin oscillator
Local oscillator buffer and prescaler
SAW filter IF preamplifier with gain control input and
switchable output
Bandgap voltage stabilizer for oscillator stability
External IF filter between the mixer output and the IF
amplifier input.
APPLICATIONS
Down frequency conversion in DBS (Direct
Broadcasting Satellite) satellite receivers.
GENERAL DESCRIPTION
The TDA8010M; TDA8010AM are integrated circuits that
perform the mixer/oscillator function in satellite tuners.
The devices include a gain controlled IF amplifier that can
directly drive two single-ended SAW filters or a differential
SAW filter using a three function switchable output.
They contain an internal LO prescaler and buffer that is
compatible with the input of a terrestrial or satellite
frequency synthesizer. They are also suitable for digital TV
tuners. These devices are available in small outline
packages that give the designer the capability to design an
economical and physically small satellite tuner.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CC
supply voltage
4.5
5.0
5.5
V
I
CC
supply current
-
70
-
mA
f
RF
RF frequency range
700
-
2150
MHz
f
osc
oscillator frequency
1380
-
2650
MHz
NF
M
mixer noise figure
corrected for image
-
10
-
dB
G
max
maximum total gain
mixer plus IF
-
40
-
dB
G
min
minimum total gain
mixer plus IF
-
-
17
-
dB
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA8010M
SSOP20
plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
TDA8010AM
1996 Oct 24
3
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M; TDA8010AM
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
MGE506
DIVIDE-BY-2
PRE-SCALER
OSCILLATOR
STABILIZER
RF INPUT
STAGE
SWITCH
CONTROL
LO
BUFFER
IF AMP
OUTPUT
SWITCH
VCC
20 (1)
19 (2)
18 (3)
17 (4)
16 (5)
15 (6)
14 (7)
13 (8)
12 (9)
11 (10)
(11) 10
(12) 9
(13) 8
(14) 7
(15) 6
(16) 5
(17) 4
(18) 3
(19) 2
(20) 1
LOOUT2
LOOUT1
LOGND
OSC2
OSC1
OSCGND
IFOUT2
VCC
IFGND
IFOUT1
AGC
IFIN2
IFIN1
MOUT2
MOUT1
RFIN1
MGND
RFIN2
VCCM
SC
TDA8010M
TDA8010AM
RAGC
The pin numbers given in parenthesis refer to the TDA8010AM.
1996 Oct 24
4
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M; TDA8010AM
PINNING
SYMBOL
PINS
DESCRIPTION
TDA8010M
TDA8010AM
SC
1
20
IF output switch control
V
CCM
2
19
supply voltage for mixer
RFIN1
3
18
RF input 1
RFIN2
4
17
RF input 2
MGND
5
16
ground for mixer
MOUT1
6
15
mixer output 1
MOUT2
7
14
mixer output 2
IFIN1
8
13
IF amplifier input 1
IFIN2
9
12
IF amplifier input 2
AGC
10
11
IF amplifier gain control input
IFOUT1
11
10
IF amplifier output 1
IFGND
12
9
ground for IF amplifier
V
CC
13
8
supply voltage
IFOUT2
14
7
IF amplifier output 2
OSCGND
15
6
ground for oscillator
OSC1
16
5
oscillator tuning circuit input 1
OSC2
17
4
oscillator tuning circuit input 2
LOGND
18
3
ground for local oscillator buffer
LOOUT1
19
2
local oscillator output 1
LOOUT2
20
1
local oscillator output 2
Fig.2 Pin configuration (TDA8010M).
handbook, halfpage
SC
VCCM
RFIN1
RFIN2
MGND
MOUT1
MOUT2
IFIN1
IFIN2
AGC
LOOUT2
LOOUT1
LOGND
OSC2
OSCGND
IFOUT2
OSC1
VCC
IFGND
IFOUT1
1
2
3
4
5
6
7
8
9
10
11
12
20
19
18
17
16
15
14
13
TDA8010M
MGE504
Fig.3 Pin configuration (TDA8010AM).
handbook, halfpage
LOOUT2
LOOUT1
LOGND
OSC2
OSC1
OSCGND
IFOUT2
VCC
IFGND
IFOUT1
SC
VCCM
RFIN1
RFIN2
MOUT1
MOUT2
MGND
IFIN1
IFIN2
AGC
1
2
3
4
5
6
7
8
9
10
11
12
20
19
18
17
16
15
14
13
TDA8010AM
MGE505
1996 Oct 24
5
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M; TDA8010AM
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
HANDLING
All pins withstand the ESD test in accordance with
"UZW-BO/FQ-A302 (human body model)" and with
"UZW-BO/FQ-B302 (machine model)".
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.3
+6.0
V
V
i(max)
maximum input voltage on all pins
-
0.3
V
CC
V
I
source(max)
maximum output source current
-
10
mA
t
sc
maximum short-circuit time on all outputs
-
10
s
T
stg
storage temperature
-
55
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
20
+80
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
120
K/W
1996 Oct 24
6
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M; TDA8010AM
CHARACTERISTICS
V
CC
= 5 V; T
amb
= 25
C; measured in application circuit of Fig.6; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
V
CC
supply voltage
4.75
5.0
5.25
V
I
CC
supply current
60
70
80
mA
Mixer
f
RF
RF frequency range
700
-
2150
MHz
NF
total noise figure (mixer plus IF);
not corrected for image
V
AGC
= 0.9V
CC
; f
i
= 920 MHz
-
8
10
dB
V
AGC
= 0.9V
CC
; f
i
= 2150 MHz
-
13
15
dB
G
M
available power gain for mixer
R
L
= 2.2 k
-
10
-
dB
G
max1
maximum total gain
(mixer + IFOUT1)
f
i
= 920 MHz; notes 1 and 2
37
40
-
dB
f
i
= 2150 MHz; notes 1 and 2
36
38
-
dB
G
min1
minimum total gain
(mixer + IFOUT1)
notes 1 and 2
-
-
30
-
14
dB
G
max2
maximum total gain
(mixer + IFOUT2)
f
i
= 920 MHz; notes 1 and 2
36
39
-
dB
f
i
= 2150 MHz; notes 1 and 2
35
37
-
dB
G
min2
minimum total gain
(mixer + IFOUT2)
notes 1 and 2
-
-
30
-
15
dB
Z
I(RF)
input impedance (R
s
+ L
s
)
from 920 to 2150 MHz
20
30
40
5
7.5
10
nH
Z
O(RF)
output impedance (R
p
//C
p
)
(open collector)
f
IF
= 480 MHz
8
12
16
k
450
550
650
fF
IP3
third-order interception point
see Fig.4
-
2
+2
-
dBm
IP2
second-order interception point
see Fig.5
10
25
-
dBm
Local oscillator output
V
LO
output voltage
R
L
= 50
87
90
93
dB
V
SRF
spurious signal on LO output
with respect to LO output signal
R
L
= 50
; note 3
-
-
35
-
10
dB
LO
leak
local oscillator leakage
RF input
-
-
50
-
dBm
IF output (mixer)
-
-
35
-
dBm
Oscillator
f
osc
oscillator frequency range
V
CC
= 4.5 to 5.5 V;
T
amb
=
-
20 to +80
C
1380
-
2650
MHz
f
osc(max)
maximum oscillator frequency
-
2700
-
MHz
f
shift
oscillator frequency shift
V
CC
= 4.75 to 5.25 V;
at 2550 MHz
-
350
500
kHz
V
CC
= 4.75 to 5.25 V;
at 2650 MHz
-
400
600
kHz
f
drift
oscillator frequency drift
T = 25
C; at 2550 MHz
-
-
8
-
15
MHz
T = 25
C; at 2650 MHz
-
-
8
-
16
MHz
1996 Oct 24
7
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M; TDA8010AM
Notes
1. Maximum gain: V
AGC
= 0.9V
CC
; f
IF
= 480 MHz; IF output single-ended.
2. Minimum gain: V
AGC
= 0.1V
CC
; f
IF
= 480 MHz; IF output single-ended.
3. RF input power range =
-
70 to
-
20 dBm.
4. V
AGC
= 0.9V
CC
; f
IF
= 480 MHz; R
source
= 100
.
5. Switch isolation is defined at an IF output level of 77 dB
V; f
IF
= 480 MHz.
N
oscillator phase noise
at 100 kHz
88
92
-
dBc
at 10 kHz
62
69
-
dBc
IF amplifier
f
IF
IF frequency range
60
-
625
MHz
G
v(max)
maximum voltage gain
note 1
-
40
-
dB
G
v(min)
minimum voltage gain
note 2
-
-
30
-
dB
NF
IF
IF noise figure
note 4
-
8
-
dB
V
oIF
output voltage level
-
-
85
dB
V
Z
O(IF)
output impedance
single-ended
-
50
-
Z
I(IF)
input impedance (R
p
//L
p
)
30
33
36
5
7
9
nH
SW
iso
switch isolation
note 5
33
36
-
dB
V
SW
switch control voltage
IF1 on; IF2 off
0.8V
CC
-
V
CC
V
IF1 off; IF2 on
0.2V
CC
-
0.6V
CC
V
differential output
0
-
0.07V
CC
V
R
I(AGC)
AGC input resistance
see Fig.6
-
4
-
k
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Fig.4 IP3 measurement method.
REF is the level if F1 or F2 were at 480 MHz.
IP3 = IM3/2 + input level.
Input level: 2
-
23 dBm.
Output level: 2
74 dB
V.
handbook, halfpage
MGE507
2F1
-
F2
F1
F2
2F2
-
F1
390
420
450
480 (MHz)
IM3
REF
Fig.5 IP2 measurement method.
IP2 = IM2 + input level.
Input level: 2
-
23 dBm.
Output level: 2
74 dB
V.
handbook, halfpage
MGE508
LO
-
F1
LO
-
F2
(F1
+
F2)
-
LO
FI
RF
478
480
484
(MHz)
964
962
1926
(MHz)
IM2
1996 Oct 24
8
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M; TDA8010AM
APPLICATION INFORMATION
book, full pagewidth
MGE509
DIVIDE-BY-2
PRE-SCALER
OSCILLATOR
STABILIZER
RF INPUT
STAGE
SWITCH
CONTROL
LO
BUFFER
IF AMP
OUTPUT
SWITCH
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
SC
V
CCM
RFIN1
RFIN2
MGND
MOUT1
MOUT2
IFIN1
IFIN2
AGC
IFOUT1
IFGND
V
CC
IFOUT2
OSCGND
LOGND
OSC1
OSC2
LOOUT1
LOOUT2
TDA8010AM
R
AGC
3.3 nF
150
3.3 nF
150
10
nF
V
CC
22 k
22 k
22 k
22 k
1.5 pF
L3
L3
BB833
BB833
1 nF
12
k
12
k
2.2
F
VT
3.3 nF
3.3 nF
50
load
10
nF
3.3 pF
2.7
pF
2.7
pF
3.3 pF
L2
3.3 k
V
CC
33
L1
0.56 pF
3.3 nF
3.3 nF
V
CC
10 nF
Fig.6 Application diagram.
L1: 5.5 turns; diameter
=
5
mm.
L2: 5.5 turns; diameter
=
1.5
mm.
L3: micro-strip coil; L
=
3.5
0.4
mm. No ground plane on the other side.
Varicaps: Siemens BB833.
1996 Oct 24
9
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M; TDA8010AM
PACKAGE OUTLINE
UNIT
A
1
A
2
A
3
b
p
c
D
(1)
E
(1)
(1)
e
H
E
L
L
p
Q
Z
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.15
0
1.4
1.2
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
0.65
1.0
0.2
6.6
6.2
0.65
0.45
0.48
0.18
10
0
o
o
0.13
0.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
0.75
0.45
SOT266-1
90-04-05
95-02-25
w
M
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v
M
A
X
(A )
3
A
y
0.25
1
10
20
11
pin 1 index
0
2.5
5 mm
scale
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
A
max.
1.5
1996 Oct 24
10
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M; TDA8010AM
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"IC Package Databook" (order code 9398 652 90011).
Reflow soldering
Reflow soldering techniques are suitable for all SSOP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250
C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45
C.
Wave soldering
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
If wave soldering cannot be avoided, the following
conditions must be observed:
A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260
C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150
C within
6 seconds. Typical dwell time is 4 seconds at 250
C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300
C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320
C.
1996 Oct 24
11
Philips Semiconductors
Objective specification
Low power mixers/oscillators
for satellite tuners
TDA8010M; TDA8010AM
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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