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Электронный компонент: TDA8357

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DATA SHEET
Preliminary specification
File under Integrated Circuits, IC02
1999 Nov 10
INTEGRATED CIRCUITS
TDA8357J
Full bridge vertical deflection output
circuit in LVDMOS
1999 Nov 10
2
Philips Semiconductors
Preliminary specification
Full bridge vertical deflection output circuit
in LVDMOS
TDA8357J
FEATURES
Few external components required
High efficiency fully DC coupled vertical bridge output
circuit
Vertical flyback switch with short rise and fall times
Built-in guard circuit
Thermal protection circuit
Improved EMC performance due to differential inputs.
GENERAL DESCRIPTION
The TDA8357J is a power circuit for use in 90
and 110
colour deflection systems for 25 to 200 Hz field
frequencies, and for 4 : 3 and 16 : 9 picture tubes. The IC
contains a vertical deflection output circuit, operating as a
high efficiency class G system. The full bridge output
circuit allows DC coupling of the deflection coil in
combination with single positive supply voltages.
The IC is constructed in a Low Voltage DMOS (LVDMOS)
process that combines bipolar, CMOS and DMOS
devices. DMOS transistors are used in the output stage
because of absence of second breakdown.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
V
P
supply voltage
7.5
12
18
V
V
FB
flyback supply voltage
2V
P
45
66
V
I
q(P)(av)
average quiescent supply current
during scan
-
10
15
mA
I
q(FB)(av)
average quiescent flyback supply current
during scan
-
-
10
mA
P
tot
total power dissipation
-
-
8
W
Inputs and outputs
V
i(dif)(p-p)
differential input voltage (peak-to-peak value)
-
1000
1500
mV
I
o(p-p)
output current (peak-to-peak value)
-
-
2.0
A
Flyback switch
I
o(peak)
maximum (peak) output current
t
1.5 ms
-
-
1.2
A
Thermal data; in accordance with IEC 747-1
T
stg
storage temperature
-
55
-
+150
C
T
amb
ambient temperature
-
25
-
+75
C
T
j
junction temperature
-
-
150
C
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA8357J
DBS9P
plastic DIL-bent-SIL power package; 9 leads (lead length
12/11 mm); exposed die pad
SOT523-1
1999 Nov 10
3
Philips Semiconductors
Preliminary specification
Full bridge vertical deflection output circuit
in LVDMOS
TDA8357J
BLOCK DIAGRAM
handbook, full pagewidth
MGS803
INPUT
AND
FEEDBACK
CIRCUIT
GUARD
CIRCUIT
TDA8357J
9
7
M2
M5
M4
M1
M3
D1
D3
D2
4
5
2
1
8
6
3
INA
INB
GND
GUARD
VP
VFB
VI(bias)
Vi(p-p)
VI(bias)
0
Vi(p-p)
0
OUTB
OUTA
FEEDB
Fig.1 Block diagram.
PINNING
SYMBOL
PIN
DESCRIPTION
INA
1
input A
INB
2
input B
V
P
3
supply voltage
OUTB
4
output B
GND
5
ground
V
FB
6
flyback supply voltage
OUTA
7
output A
GUARD
8
guard output
FEEDB
9
feedback input
handbook, halfpage
INA
INB
VP
OUTB
GND
VFB
OUTA
GUARD
FEEDB
1
2
3
4
5
6
7
8
9
TDA8357J
MGS804
Fig.2 Pin configuration.
The exposed die pad is connected to pin GND.
1999 Nov 10
4
Philips Semiconductors
Preliminary specification
Full bridge vertical deflection output circuit
in LVDMOS
TDA8357J
FUNCTIONAL DESCRIPTION
Vertical output stage
The vertical driver circuit has a bridge configuration.
The deflection coil is connected between the
complimentary driven output amplifiers. The differential
input circuit is voltage driven. The input circuit is specially
designed for direct connection to driver circuits delivering
a differential signal but it is also suitable for single-ended
applications. The output currents of the driver device are
converted to voltages by the conversion resistors
R
CV1
and R
CV2
(see Fig.3) connected to pins INA
and INB. The differential input voltage is compared with
the voltage across the measuring resistor R
M
, providing
internal feedback information. The voltage across R
M
is
proportional with the output current. The relationship
between the differential input current and the output
current is defined by:
2
I
i(dif)(p-p)
R
CV
= I
o(p-p)
R
M
The output current should measure 0.5 to 2.0 A (p-p) and
is determined by the value of R
M
and R
CV
. The allowable
input voltage range is 100 mV to 1.6 V for each input. The
formula given does not include internal bondwire
resistances. Depending on the values of R
M
and the
internal bondwire resistance (typical value of 50 m
) the
actual value of the current in the deflection coil will be
about 5% lower than calculated.
Flyback supply
The flyback voltage is determined by the flyback supply
voltage V
FB
. The principle of two supply voltages (class G)
allows to use an optimum supply voltage V
P
for scan and
an optimum flyback supply voltage V
FB
for flyback, thus
very high efficiency is achieved. The available flyback
output voltage across the coil is almost equal to V
FB
, due
to the absence of a coupling capacitor which is not
required in a bridge configuration. The very short rise
and fall times of the flyback switch are determined mainly
by the slew-rate value of more than 300 V/
s.
Protection
The output circuit contains protection circuits for:
Too high die temperature
Overvoltage of output A.
Guard circuit
A guard circuit with output pin GUARD is provided.
The guard circuit generates a HIGH-level during the
flyback period. The guard circuit is also activated for one
of the following conditions:
During thermal protection (T
j
170
C)
During an open-loop condition.
The guard signal can be used for blanking the picture tube
and signalling fault conditions. The vertical
synchronization pulses of the guard signal can be used by
an On Screen Display (OSD) microcontroller.
Damping resistor compensation
HF loop stability is achieved by connecting a damping
resistor R
D1
across the deflection coil. The current values
in R
D1
during scan and flyback are significantly different.
Both the resistor current and the deflection coil current flow
into measuring resistor R
M
, resulting in a too low deflection
coil current at the start of the scan.
The difference in the damping resistor current values
during scan and flyback have to be externally
compensated in order to achieve a short settling time.
For that purpose a compensation resistor R
CMP
in series
with a zener diode is connected between pins OUTA
and INA (see Fig.4). The zener diode voltage value should
be equal to V
P
. The value of R
CMP
is calculated by:
where:
V
loss(FB)
is the voltage loss between pins V
FB
and OUTA
at flyback
R
coil
is the deflection coil resistance
V
Z
is the voltage of zener diode D5.
R
CMP
V
FB
V
loss FB
(
)
V
Z
(
)
R
D1
R
CV1
V
FB
V
loss FB
(
)
I
coil peak
(
)
R
coil
(
)
R
M
------------------------------------------------------------------------------------------------------------
=
1999 Nov 10
5
Philips Semiconductors
Preliminary specification
Full bridge vertical deflection output circuit
in LVDMOS
TDA8357J
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. When the voltage at pin OUTA supersedes 70 V the circuit will limit the voltage.
2. At T
j(max)
.
3. Equivalent to 200 pF capacitance discharge through a 0
resistor.
4. Equivalent to 100 pF capacitance discharge through a 1.5 k
resistor.
5. Internally limited by thermal protection at T
j
170
C.
THERMAL CHARACTERISTICS
In accordance with IEC 747-1.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
P
supply voltage
-
18
V
V
FB
flyback supply voltage
-
68
V
V
n
DC voltage
pin OUTA
note 1
-
68
V
pin OUTB
-
V
P
V
pins INA, INB, GUARD and FEEDB
-
0.5
V
P
V
I
n
DC current
pins OUTA and OUTB
during scan (p-p)
-
2.0
A
pins OUTA and OUTB
at flyback (peak); t
1.5 ms
-
1.2
A
pins INA, INB, GUARD and FEEDB
-
20
+20
mA
I
lu
latch-up current
current into any pin; pin voltage
is 1.5
V
P
; note 2
-
+200
mA
current out of any pin; pin voltage
is
-
1.5
V
P
; note 2
-
200
-
mA
V
es
electrostatic handling voltage
machine model; note 3
-
300
+300
V
human body model; note 4
-
2000 +2000 V
P
tot
total power dissipation
-
8
W
T
stg
storage temperature
-
55
+150
C
T
amb
ambient temperature
-
25
+75
C
T
j
junction temperature
note 5
-
150
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th(j-c)
thermal resistance from junction to case
-
-
6
K/W
R
th(j-a)
thermal resistance from junction to ambient
in free air
-
-
65
K/W
1999 Nov 10
6
Philips Semiconductors
Preliminary specification
Full bridge vertical deflection output circuit
in LVDMOS
TDA8357J
CHARACTERISTICS
V
P
= 12 V; V
FB
= 45 V; f
vert
= 50 Hz; V
I(bias)
= 880 mV; T
amb
= 25
C; measured in test circuit of Fig.3; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
V
P
operating supply voltage
7.5
12
18
V
V
FB
flyback supply voltage
note 1
2V
P
45
66
V
I
q(P)(av)
average quiescent supply current
during scan
-
10
15
mA
I
q(P)
quiescent supply current
no signal; no load
-
55
75
mA
I
q(FB)(av)
average quiescent flyback supply
current
during scan
-
-
10
mA
Inputs A and B
V
i(dif)(p-p)
differential input voltage
(peak-to-peak value)
note 2
-
1000
1500
mV
V
I(bias)
input bias voltage
note 2
100
880
1600
mV
I
I(bias)
input bias current
-
25
35
A
Outputs A and B
V
loss(1)
voltage loss first scan part
note 3
I
o
= 0.7 A
-
-
3.9
V
I
o
= 1.0 A
-
-
5.5
V
V
loss(2)
voltage loss second scan part
note 4
I
o
=
-
0.7 A
-
-
2.8
V
I
o
=
-
1.0 A
-
-
4.0
V
I
o(p-p)
output current (peak-to-peak value)
-
-
2.0
A
LE
linearity error
I
o(p-p)
= 2.0 A; notes 5 and 6
adjacent blocks
-
1
2
%
non adjacent blocks
-
1
3
%
V
offset
offset voltage
across R
M
; V
i(dif)
= 0 V
V
I(bias)
= 200 mV
-
-
15
mV
V
I(bias)
= 1 V
-
-
25
mV
V
offset(T)
offset voltage variation with temperature across R
M
; V
i(dif)
= 0 V
-
-
40
V/K
V
O
DC output voltage
V
i(dif)
= 0 V
-
0.5V
P
-
V
G
v(ol)
open-loop voltage gain
notes 7 and 8
-
60
-
dB
f
-
3dB(h)
high
-
3 dB cut-off frequency
open-loop
-
1
-
kHz
G
v
voltage gain
note 9
-
1
-
G
v(T)
voltage gain variation with the
temperature
-
-
10
-
4
K
-
1
PSRR
power supply rejection ratio
note 10
80
90
-
dB
1999 Nov 10
7
Philips Semiconductors
Preliminary specification
Full bridge vertical deflection output circuit
in LVDMOS
TDA8357J
Notes
1. To limit V
OUTA
to 68 V, V
FB
must be 66 V due to the voltage drop of the internal flyback diode between pins OUTA
and V
FB
at the first part of the flyback.
2. Allowable input range: V
I(bias)
+ V
i(dif)
< 1600 mV and V
I(bias)
-
V
i(dif)
> 100 mV for each input.
3. This value specifies the sum of the voltage losses of the internal current paths between pins V
P
and OUTA, and
between pins OUTB and GND. Specified for T
j
= 125
C. The temperature coefficient for V
loss(1)
is a positive value.
4. This value specifies the sum of the voltage losses of the internal current paths between pins V
P
and OUTB, and
between pins OUTA and GND. Specified for T
j
= 125
C. The temperature coefficient for V
loss(2)
is a positive value.
5. The linearity error is measured for a linear input signal without S-correction and is based on the `on screen'
measurement principle. This method is defined as follows. The output signal is divided in 22 successive equal time
blocks k. The 1st and 22nd blocks are ignored, while the voltage amplitudes are measured across R
M
, starting at
k = 2 and ending at k = 21, where V
k
and V
k+1
are the measured voltages of two successive blocks. V
min
, V
max
and
V
avg
are the minimum, maximum and average voltages respectively. The linearity errors are defined as:
a)
(adjacent blocks)
b)
(non adjacent blocks)
6. The linearity errors are specified for a minimum input voltage of 300 mV (p-p). Lower input voltages lead to voltage
dependent S-distortion in the input stage.
7.
8. Pin FEEDB not connected.
9.
10. V
P(ripple)
= 500 mV (RMS value); 50 Hz < f
P(ripple)
< 1 kHz; measured across R
M
.
11. This value specifies the internal voltage loss of the current path between pins V
FB
and OUTA.
Flyback switch
I
o(peak)
maximum (peak) output current
t
1.5 ms
-
-
1.2
A
V
loss(FB)
voltage loss at flyback
note 11
I
o
= 0.7 A
-
7.5
8.5
V
I
o
= 1.0 A
-
8
9
V
Guard circuit
V
O(grd)
guard output voltage
I
O(grd)
= 100
A
5
6
7
V
V
O(grd)(max)
allowable guard voltage
maximum leakage current
I
L(max)
= 10
A
-
-
18
V
I
O(grd)
output current
V
O(grd)
= 0 V; not active
-
-
10
A
V
O(grd)
= 4.5 V; active
1
-
2.5
mA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
LE
V
k
V
k
1
+
V
avg
--------------------------
=
LE
V
max
V
min
V
avg
-------------------------------
=
G
v ol
( )
V
OUTA
V
OUTB
V
FEEDB
V
OUTB
--------------------------------------------
=
G
v
V
FEEDB
V
OUTB
V
INA
V
INB
--------------------------------------------
=
1999 Nov 10
8
Philips Semiconductors
Preliminary specification
Full bridge vertical deflection output circuit
in LVDMOS
TDA8357J
APPLICATION INFORMATION
handbook, full pagewidth
2
1
INA
INB
VP
VFB
FEEDB
C1
100 nF
C2
100 nF
CM
10 nF
GUARD
RGRD
4.7 k
RCV1
2.2 k
(1%)
RCV2
2.2 k
(1%)
RM
0.8
RL
5.2
RS
2.7 k
II(bias)
II(bias)
Ii(dif)
MGS806
INPUT
AND
FEEDBACK
CIRCUIT
GUARD
CIRCUIT
TDA8357J
9
7
4
5
8
6
3
GND
VP
VFB
OUTB
OUTA
Vi(p-p)
VI(bias)
0
VI(bias)
Vi(p-p)
0
M2
M5
M4
M1
M3
D1
D3
D2
Fig.3 Test diagram.
1999
Nov
10
9
Philips Semiconductors
Preliminar
y specification
Full br
idge v
e
r
tical deflection output circuit
in L
VDMOS
TD
A8357J
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k
, full pagewidth
VP = 11 V
Vfb = 29 V
deflection
coil
8.82 mH
7.9
(W66ESF)
RM
1.5
RD1
330
RCMP
270 k
DEFLECTION
CONTROLLER
C6
2.2 nF
C7
2.2 nF
CD
(1)
47 nF
C3
100
nF
D5
12 V
D4
(2)
C1
47
F
(100 V)
C4
100 nF
C2
220
F
(25 V)
RFB
10
RD2
(1)
22
2
1
INA
INB
FEEDB
GUARD
RGRD
12 k
RCV1
2.2 k
(1%)
RCV2
2.2 k
(1%)
RS
2.7 k
MGS807
INPUT
AND
FEEDBACK
CIRCUIT
GUARD
CIRCUIT
TDA8357J
9
7
4
5
8
6
3
GND
VP
VFB
OUTB
OUTA
Vi(p-p)
VI(bias)
0
VI(bias)
Vi(p-p)
0
M2
M5
M4
M1
M3
D1
D3
D2
Fig.4 Application diagram.
f
vert
= 50 Hz; t
FB
= 640
s; I
I(bias)
= 400
A; I
i(dif)(peak)
= 494
A; I
o(p-p)
= 1.45 A.
(1) Optional, depending on the deflection coil impedance.
(2) Optional extended flash over protection; BYD33D or equivalent.
1999 Nov 10
10
Philips Semiconductors
Preliminary specification
Full bridge vertical deflection output circuit
in LVDMOS
TDA8357J
Supply voltage calculation
For calculating the minimum required supply voltage,
several specific application parameter values have to be
known. These parameters are the required
maximum (peak) deflection coil current I
coil(peak)
, the coil
parameters R
coil
and L
coil
, and the measuring resistance
of R
M
. The required maximum (peak) deflection coil
current should also include the overscan.
The deflection coil resistance has to be multiplied with 1.2
in order to take account of hot conditions.
Chapter "Characteristics" supplies values for the voltage
losses of the vertical output stage. For the first part of the
scan the voltage loss is given by V
loss(1)
. For the second
part of the scan the voltage loss is given by V
loss(2)
.
The voltage drop across the deflection coil during scan is
determined by the coil impedance. For the first part of the
scan the inductive contribution and the ohmic contribution
to the total coil voltage drop are of opposite sign, while for
the second part of the scan the inductive part and the
ohmic part have the same sign.
For the vertical frequency the maximum frequency
occurring must be applied to the calculations.
The required power supply voltage V
P
for the first part of
the scan is given by:
The required power supply voltage V
P
for the second part
of the scan is given by:
The minimum required supply voltage V
P
shall be the
highest of the two values V
P(1)
and V
P(2)
. Spread in supply
voltage and component values also has to be taken into
account.
Flyback supply voltage calculation
If the flyback time is known, the required flyback supply
voltage can be calculated by the simplified formula:
where:
The flyback supply voltage calculated this way is about
5% to 10% higher than required.
Calculation of the power dissipation of the vertical
output stage
The IC total power dissipation is given by the formula:
P
tot
= P
sup
-
P
L
The power to be supplied is given by the formula:
In this formula 0.3 [W] represents the average value of the
losses in the flyback supply.
The average external load power dissipation in the
deflection coil and the measuring resistor is given by the
formula:
Example
Table 1
Application values
Table 2
Calculated values
V
P 1
( )
I
coil peak
(
)
R
coil
R
M
+
(
)
L
coil
2I
coil peak
(
)
f
vert max
(
)
V
loss 1
( )
+
=
V
P 2
( )
I
coil peak
(
)
R
coil
R
M
+
(
)
=
L
coil
2I
coil peak
(
)
f
vert max
(
)
V
loss 2
( )
+
+
V
FB
I
coil p p
(
)
R
coil
R
M
+
1
e
t
FB
x
/
---------------------------
=
x
L
coil
R
coil
R
M
+
---------------------------
=
SYMBOL
VALUE
UNIT
I
coil(peak)
0.725
A
I
coil(p-p)
1.45
A
L
coil
8.82
mH
R
coil
7.9
R
M
1.5
f
vert
50
Hz
t
FB
640
s
SYMBOL
VALUE
UNIT
V
P
11
V
R
M
+ R
coil
(hot)
11
t
vert
0.02
s
x
0.000802
V
FB
29
V
P
sup
4.45
W
P
L
1.93
W
P
tot
2.52
W
P
sup
V
P
I
coil peak
(
)
2
------------------------
V
P
0.015 [A]
0.3 [W]
+
+
=
P
L
I
coil peak
(
)
(
)
2
3
--------------------------------
R
coil
R
M
+
(
)
=
1999 Nov 10
11
Philips Semiconductors
Preliminary specification
Full bridge vertical deflection output circuit
in LVDMOS
TDA8357J
Heatsink calculation
The value of the heatsink can be calculated in a standard
way with a method based on average temperatures.
The required thermal resistance of the heatsink is
determined by the maximum die temperature of 150
C.
In general we recommend to design for an average die
temperature not exceeding 130
C.
E
XAMPLE
Measured or given values: P
tot
= 3 W; T
amb
= 40
C;
T
j
= 110
C; R
th(j-c)
= 5 K/W; R
th(c-h)
= 2 K/W.
The required heatsink thermal resistance is given by:
When we use the values given we find:
The heatsink temperature will be:
T
h
= T
amb
+ (R
th(h-a)
P
tot
) = 40 + (3
16) = 90
C
R
th h
a
(
)
T
j
T
amb
P
tot
------------------------
R
th j
c
(
)
R
th c
h
(
)
+
(
)
=
R
th h
a
(
)
110
40
3.0
----------------------
5
2
+
(
)
16 K/W
=
=
1999 Nov 10
12
Philips Semiconductors
Preliminary specification
Full bridge vertical deflection output circuit
in LVDMOS
TDA8357J
INTERNAL PIN CONFIGURATION
PIN
SYMBOL
EQUIVALENT CIRCUIT
1
INA
2
INB
3
V
P
4
OUTB
5
GND
6
V
FB
7
OUTA
1
300
MBL100
2
300
MBL102
MGS805
6
3
7
4
5
1999 Nov 10
13
Philips Semiconductors
Preliminary specification
Full bridge vertical deflection output circuit
in LVDMOS
TDA8357J
8
GUARD
9
FEEDB
PIN
SYMBOL
EQUIVALENT CIRCUIT
MBL103
8
300
MBL101
9
300
1999 Nov 10
14
Philips Semiconductors
Preliminary specification
Full bridge vertical deflection output circuit
in LVDMOS
TDA8357J
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
DIMENSIONS (mm are the original dimensions)
Notes
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
2. Plastic surface within circle area D1 may protrude 0.04 mm maximum.
SOT523-1
0
10 mm
5
scale
w
M
bp
Dh
q1
Z
1
9
e
e1
m
e2
x
A2
non-concave
D1
D
P
k
q2
L3
L2
L
Q
c
E
98-11-12
DBS9P: plastic DIL-bent-SIL power package; 9 leads (lead length 12/11 mm); exposed die pad
SOT523-1
view B: mounting base side
B
UNIT
bp
L1
c
D
(1)
Dh
L
q2
mm
2.7
2.3
A2
(2)
0.80
0.65
0.58
0.48
13.2
12.8
D1
(2)
6.2
5.8
3.5
Eh
3.5
e
2.54
e1
1.27
e2
5.08
4.85
Q
E
(1)
14.7
14.3
Z
(1)
1.65
1.10
11.4
10.0
L2
6.7
5.5
L3
4.5
3.7
3.4
3.1
1.15
0.85
q
17.5
16.3
q1
2.8
m
0.8
v
3.8
3.6
3.0
2.0
12.4
11.0
P
k
0.02
x
0.3
w
,,
,,
Eh
L1
q
v
M
1999 Nov 10
15
Philips Semiconductors
Preliminary specification
Full bridge vertical deflection output circuit
in LVDMOS
TDA8357J
SOLDERING
Introduction to soldering through-hole mount
packages
This text gives a brief insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our
"Data Handbook IC26; Integrated Circuit
Packages" (document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is
260
C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.
The total contact time of successive solder waves must not
exceed 5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
stg(max)
). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300
C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400
C, contact may be up to 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
PACKAGE
SOLDERING METHOD
DIPPING
WAVE
DBS, DIP, HDIP, SDIP, SIL
suitable
suitable
(1)
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of this specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999
68
Philips Semiconductors a worldwide company
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Printed in The Netherlands
545004/200/01/pp
16
Date of release:
1999 Nov 10
Document order number:
9397 750 06196